MARKING CODE SMD IC
Abstract: PBHV8115Z PBHV9115Z SC-73 TRANSISTOR SMD MARKING CODE 210 transistor smd code marking 101
Text: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBHV8115Z
OT223
SC-73)
PBHV9115Z.
AEC-Q101
PBHV8115Z
MARKING CODE SMD IC
PBHV9115Z
SC-73
TRANSISTOR SMD MARKING CODE 210
transistor smd code marking 101
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Untitled
Abstract: No abstract text available
Text: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBHV8140Z
OT223
SC-73)
PBHV9540Z.
AEC-Q101
PBHV8140Z
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Untitled
Abstract: No abstract text available
Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBHV8215Z
OT223
SC-73)
PBHV9215Z.
AEC-Q101
PBHV8215Z
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PBHV8540Z
Abstract: PBHV9040Z SC-73 MARKING CODE SMD IC MARKING SMD IC CODE
Text: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
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PBHV8540Z
OT223
SC-73)
PBHV9040Z.
AEC-Q101
PBHV8540Z
PBHV9040Z
SC-73
MARKING CODE SMD IC
MARKING SMD IC CODE
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v8140z
Abstract: PBHV8140Z SC-73 MARKING CODE SMD IC V8140
Text: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBHV8140Z
OT223
SC-73)
PBHV9540Z.
AEC-Q101
PBHV8140Z
v8140z
SC-73
MARKING CODE SMD IC
V8140
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V8215Z
Abstract: SC-73 MARKING CODE SMD IC PBHV8215Z 170KW
Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBHV8215Z
OT223
SC-73)
PBHV9215Z.
AEC-Q101
PBHV8215Z
V8215Z
SC-73
MARKING CODE SMD IC
170KW
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V8540Z
Abstract: PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC
Text: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
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PBHV8540Z
OT223
SC-73)
PBHV9040Z.
AEC-Q101
PBHV8540Z
V8540Z
PBHV9040Z
SC-73
MARKING CODE SMD IC
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PBHV8115Z
Abstract: PBHV9115Z SC-73
Text: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
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PBHV8115Z
OT223
SC-73)
PBHV9115Z.
AEC-Q101
PBHV8115Z
PBHV9115Z
SC-73
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1n0608
Abstract: infineon 1n0608 SMD Diode V6 marking code SPP80N06S-08 1n06 PG-TO263-3-2 SPB80N06S-08 SPI80N06S-08 smd diode v6 58 smd diode V6 64
Text: SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features • N-channel - Normal Level -Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow
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SPB80N06S-08
SPI80N06S-08,
SPP80N06S-08
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
SP0000-84808
1N0608
1n0608
infineon 1n0608
SMD Diode V6 marking code
SPP80N06S-08
1n06
PG-TO263-3-2
SPB80N06S-08
SPI80N06S-08
smd diode v6 58
smd diode V6 64
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PMF63UN
Abstract: No abstract text available
Text: SO T3 23 PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMF63UN
OT323
SC-70)
PMF63UN
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to220 pcb footprint
Abstract: SMD TRANSISTOR B-37 smd transistor 512 smd transistor code 622 TLE4276V TLE4276DV Q67006-A9369 A9273 GV10 SV10
Text: Low Drop Voltage Regulator TLE 4276 Features • • • • • • • • • 5 V, 8.5 V, 10 V or variable output voltage Output voltage tolerance ≤ ±4% 400 mA current capability Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof
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P-TO220-5-43
P-TO220-5-122
P-TO220-5-3
P-TO252-5-1
P-TO252-5-11
Q67000-A9262
P-TO220-5-3,
P-TO220-5-11
Q67000-A9263
to220 pcb footprint
SMD TRANSISTOR B-37
smd transistor 512
smd transistor code 622
TLE4276V
TLE4276DV
Q67006-A9369
A9273
GV10
SV10
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1756 N2
Abstract: No abstract text available
Text: UM10508 230 V AC 17 W LED driver and dimmer Demo board using the SSL2102 Rev. 1 — 16 January 2012 User manual Document information Info Content Keywords SSL2102, AC mains supply, dimmable LED driver, AC/DC conversion Abstract This User manual describes a demonstration (demo) board for evaluating
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UM10508
SSL2102
SSL2102,
PAR38
SSL2102.
1756 N2
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HIR26-21C
Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight
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CT1003Q43-V2
HIR26-21C
w32 smd transistor
w32 smd transistor 143
17-21SYGC/S530-E2/TR8
3A-01-B74-Y9C-A1S1T1DH-AM
ELM-1882-UYWB
19-223SURSYGC/S530-A3/E3/TR8
l289
itr8102
w27 smd transistor
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TRANSISTOR SMD 2X y
Abstract: cq 622 TLE4274GV50 P-TO252-3-11 TLE4274GV10 TLE 4274 DV50 transistor 311 smd P-TO252 Q67000-A9257 Q67000-A9258
Text: Low Drop Voltage Regulator TLE 4274 Features • • • • • • • • Output voltage 5 V, 8.5 V or 10 V Output voltage tolerance ≤ ±4% Current capability 400 mA Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof
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P-TO220-3-1
TRANSISTOR SMD 2X y
cq 622
TLE4274GV50
P-TO252-3-11
TLE4274GV10
TLE 4274 DV50
transistor 311 smd
P-TO252
Q67000-A9257
Q67000-A9258
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4276GV50
Abstract: A9267 TLE 4276 D-PAK TO220-5 package 4276DV TLE4276SV ON 4276 DV TLE4276DV TLE4276V TLE 4276 G V10
Text: Low-Drop Voltage Regulator TLE 4276 Features • • • • • • • Output voltage tolerance ≤ ± 4% Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics Type
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Q67000-A9262
P-TO220-5-3
Q67000-A9263
Q67000-A9264
Q67006-A9266
P-TO220-5-122
Q67006-A9268
4276GV50
A9267
TLE 4276 D-PAK
TO220-5 package
4276DV
TLE4276SV
ON 4276 DV
TLE4276DV
TLE4276V
TLE 4276 G V10
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50X DESCRIPTION BUK207-50X QUICK REFERENCE DATA SYMBOL PARAMETER II Nominal load current ISO SYMBOL PARAMETER APPLICATIONS Vbg General controller for driving lamps, motors, solenoids, heaters.
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BUK203-50X
BUK207-50X
8UK207-50X
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Vogt
Abstract: NEOSID J6 TBB 204 a/NEOSID J6
Text: DEC 8 1992 SIEMENS TBB 204 G Mixer / Oscillator Bipolar 1C Features • Low noise • Low spurious signal content good suppression of input signal/output signal • High conversion gain • High isolated RF, IF, LO-parts • W ide range of supply voltage (down to 3 V)
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Q67000-A8213
P-DSO-14
ITD03604
ITD03605
Vogt
NEOSID J6
TBB 204
a/NEOSID J6
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50X DESCRIPTION Monolithic temperature and overload protected power switch based on M OSFET technology in a 5 pin plastic surface mount envelope, configured as a single
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BUK201-50X
K205-50X
BUK205-50X
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mb 428 ic data
Abstract: 2K28 lg smd transistor smd transistor ng ha k206 K206 transistor
Text: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK202-50X DESCRIPTION BUK206-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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BUK202-50X
BUK206-50X
100tn
mb 428 ic data
2K28
lg smd transistor
smd transistor ng ha
k206
K206 transistor
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SMD Transistor 1c
Abstract: No abstract text available
Text: SIEMENS Low-Drop Voltage Regulator TLE 4274 Features • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof Suitable for use In automotive electronics Type Ordering Code
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Q67000-A9258
P-T0220-3-1
Q67000-A9257
Q67000-A9256
Q67006-A9331
P-T0252-3-1
Q67006-A9261
P-T0263-3-1
SMD Transistor 1c
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transistor 431 smd
Abstract: smd transistor NG TRANSISTOR SMD 50x smd transistor TN transistor SMD LOA TD 422 BL
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK202-50X DESCRIPTION BUK206-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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BUK202-50X
BUK206-50X
transistor 431 smd
smd transistor NG
TRANSISTOR SMD 50x
smd transistor TN
transistor SMD LOA
TD 422 BL
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5g smd transistor
Abstract: transistor 5d smd smd transistor 3U
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION BUK207-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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BUK203-50Y
BUK207-50Y
BUK207-50Y
5g smd transistor
transistor 5d smd
smd transistor 3U
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lg smd transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK200-50Y BUK204-50Y For maintenance only. Do not use for design-in. DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a
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BUK200-50Y
BUK204-50Y
Fig-34.
lg smd transistor
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transistor smd JR
Abstract: BUK201-50Y SMD W3E 205-50Y
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a
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BUK201-50Y
BUK205-50Y
transistor smd JR
BUK201-50Y
SMD W3E
205-50Y
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