TRANSISTOR SMS Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http://onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface

Contextual Info: MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http://onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface

SMSD1819

Contextual Info: MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http://onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

BLw76a

Abstract: BLW76 BD433 74412
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

318d

Contextual Info: MSD602-RT1G, SMSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

DIN 3021-3 STANDARD

Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Contextual Info: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6

Contextual Info: MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • SC−59 CASE 318D

PPAP MANUAL

Contextual Info: MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • SC−59 CASE 318D

SMS2020

Abstract: MosFET
Contextual Info: SMS2020 830mA, 20V N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

SMS6001

Abstract: MosFET
Contextual Info: SMS6001 440mA, 60V, RDS ON 2Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5321 HIGH VOLTAGE AND HIGH RELIABILITY • High speed Switching • Wide Safe Operating Area ABSO LU TE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Vceo 800 V Collector Emitter Voltage

PS3906

Abstract: MPS3906 transistor sms
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor M PS3906 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value v CEO ^ to Collector-Base Voltage VCBO Emitter-Base Voltage Unit Vdc Vdc v EBO -5.0 Vdc

NPN transistor 2n3904 beta value

Abstract: bjt 2N3904 2N3904 npn bjt transistor 2n3904 npn fairchild beta MMBT3904FSCT 2N3904 transistor equivalent BJT 2n3904 temp sensor 2n3904 equivalent transistor of 2n3904 TRANSISTORS BJT list
Contextual Info: AN 12.14 Remote Thermal Sensing Diode Selection Guide 1 Preface This application note provides guidance to designers of systems that use thermal sensors with remote diodes. A discrete bipolar junction transistor BJT is commonly used as the remote diode. This

M113

Abstract: t4bu SD1013-3
Contextual Info: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP

BUH713

Contextual Info: SGS-THOMSON IM O e œ iL i © « BU H 713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. F ILE # E81734(N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR