TRANSISTOR SOT23 PF OA Search Results

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL QUICK REFERENCE DATA VDS = -30 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION

BSH205

Abstract: smd transistor JE 45 smd transistor ISS smd transistor JE
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 QUICK REFERENCE DATA SYMBOL VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH203 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V DS = -3 0 V

ld smd transistor LD 33

Abstract: BSH105N
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V

25CC

Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
Contextual Info: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd

p705

Contextual Info: Central CMPT591E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ENHANCED <E > S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the

339 marking code transistor

Abstract: 338 sot-23 491 marking transistor marking 491 sot23 339 SOT23
Contextual Info: Central" CMPT491E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEM ICONDUCTOR CMPT491E type is an Enhanced version of the industry stan­ dard 491 NPN silicon transistor. This device is manufactured by the epitaxial planar process and

Contextual Info: Central CMPT591E Semiconductor Corp. E N H A N C E D S P E C IF IC A T IO N SURFACE MOUNT PNP SILICON TRANSISTOR EN H AN CED <E> - 'V S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP

MMBA811C6

Abstract: MMBA812M5 fr5 transistor MMBA812M6 MMBC1622D6 25CC BSS79B BSS79C BSS82B BSS82C
Contextual Info: motorola sc 6367254 -c x s t r s / r f > MOTOROLA S C Tb DE 1 CXSTRS/R F M ax im u m r a t i n g s 96 D 8 1 9 6 9 Value VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc lc 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C Ro ja

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH201 SYMBOL QUICK REFERENCE DATA VDS = -60 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

MMBT5088

Abstract: 50K MARKING SOT 23 MMBT5089 50K MARKING SOT23 5088lt1
Contextual Info: MMBT5088 MMBT5089 Low Noise NPN Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead Pb -Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Symbol V CE O

Contextual Info: OPTEK TECHNOLOGY INC MAE D • b7TflSflO 0001453 TT3 ■ OTK i / n u r i civ Product Bulletin HCT2907M May 1990 ^ r - *» -» /N /s Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0 -37 - , 1. 1 6 7 *1 D 0.125 0.115 0.015 0.085

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

Contextual Info: 0 OPTEK Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV .0 3 6 ( 0 . 9 1 .02 4 ( 0 . 6 1 ) I 3 à -024 ( 0 .6 1 ) .01 6 ( 0 . 4 1 ) J * .0 7 8 (1 .9 6 ) .0 2 3 ( 0 . 5 6 ) .071 .03 9 ( 0 . 9 9 )

12w sot23

Abstract: transistor sot23 pf oa
Contextual Info: Illl = ^ = Illl SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)

2N2907A sot-23

Abstract: JAN2N2907A 2N2907A surface mount 2N2907A HCT2907M JAN2N2907
Contextual Info: O P TE K T EC H N O L O G Y INC MAE ti7TûSÛ0 0 0 0 1 4 5 3 D TT3 • I OTK n, y jr I civ Product Bulletin HCT2907M May 1990 T'iT'O1 1 ! Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0.125 0.115 3.18 (2.92) 0.015 0.085 (2.67)

PBR941

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y iI T PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor

Contextual Info: Mil = ^ = IN I SEME 2N3019CSM LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ± 0.10 (0.02 ± 0 .0 0 4 ) • SILICON PLANAR EPITAXIAL NPN

2N3904CSM

Contextual Info: Illl = ^ = Illl SEME 2N3904CSM LAB GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004) (0 .0 1 2 ) “W i

Contextual Info: Illl = ^ = Illl SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES ( 0.51 ± 0.10 0.02 ± 0 .004 )

2N2222ACSM

Abstract: SOT23 transistor 2N2222A 2N2222A LCC1
Contextual Info: Illl = ^ = Illl SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 0.51 ± 0.10 ( 0.02 ± 0 . 004 )

bc394

Contextual Info: nil Vrrr= mi BC394CSM SEME LAB HIGH VOLTAGE NPN AMPLIFIER TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 0.51 ±0.10 (0.02 ± 0.004) (0 .0 1 2 ) • SILICON PLANAR EPITAXIAL NPN