2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
|
Original
|
PDF
|
O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
|
Original
|
PDF
|
LDTA124EET1
SC-89
|
germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,
|
Original
|
PDF
|
IBM43RF0100
IBM43RF0100EV
823Vdc.
germanium transistors PNP
SiGe RF TRANSISTOR
pnp germanium transistor
SiGe PNP
TRANSISTOR MAKING LIST
SiGe PNP transistor
FMMT2907ATA
bipolar transistor ghz s-parameter
J1 TRANSISTOR
|
ic 353
Abstract: KTC601U SOT-353 SOT-353 Q2 marking LGR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 KTC601U Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN Features z A super-minimold package houses 2 Transistor z Excellent temperature response between these 2 transistor z High pairing property in hFE.
|
Original
|
PDF
|
OT-353
KTC601U
100mA
ic 353
KTC601U
SOT-353
SOT-353 Q2
marking LGR
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UG9J Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC UG9J is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low collector -emitter saturation voltage, etc.
|
Original
|
PDF
|
OT-353
QW-R221-025
|
KTA501U
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 KTA501U Plastic-Encapsulate Transistors DUAL TRANSISTOR PNP+PNP Features z A super-minimold package houses 2 Transistor z Excellent temperature response between these 2 transistor z High pairing property in hFE.
|
Original
|
PDF
|
OT-353
KTA501U
to150
-10mA
-100mA
-10mA
KTA501U
|
SOT-353 MARKING G2
Abstract: QW-R222-004
Text: UNISONIC TECHNOLOGIES CO., LTD UG5J NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS FEATURES * Two DTC114Y chips in a SOT-353 package. * Mounting cost and area can be reduced in half. STRUCTURE * Epitaxial planar type * NPN silicon transistor
|
Original
|
PDF
|
DTC114Y
OT-353
QW-R222-004
SOT-353 MARKING G2
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UMY1N Preliminary DUAL TRANSISTOR DUAL TRANSISTOR DESCRIPTION The UTC UMY1N is a dual transistor, including a NPN and a PNP which have common emitters. it uses UTC’s advanced technology to provide customers with high DC current gain, etc.
|
Original
|
PDF
|
OT-353
QW-R222-006
|
MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: TRANSISTOR SMD MARKING CODE A1 smd transistor marking l7 transistor smd code marking 102 transistor smd yw mosfet sot353 MOSFET TRANSISTOR SMD MARKING A1 smd TRANSISTOR code marking AV K TRANSISTOR SMD MARKING CODE marking A1 TRANSISTOR
Text: PMEM1505NG NPN transistor/Schottky rectifier module Rev. 01 — 25 May 2004 Product data sheet 1. Product profile 1.1 General description Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
|
Original
|
PDF
|
PMEM1505NG
OT353
SC-88A)
PMEM1505PG.
MOSFET TRANSISTOR SMD MARKING CODE A1
TRANSISTOR SMD MARKING CODE A1
smd transistor marking l7
transistor smd code marking 102
transistor smd yw
mosfet sot353
MOSFET TRANSISTOR SMD MARKING A1
smd TRANSISTOR code marking AV
K TRANSISTOR SMD MARKING CODE
marking A1 TRANSISTOR
|
smd transistor marking L6 NPN
Abstract: TRANSISTOR SMD CODE PACKAGE SOT353 mosfet sot353 PMEM1505NG PMEM1505PG TRANSISTOR SMD MARKING CODE 26 MOSFET TRANSISTOR SMD MARKING CODE js SMD pnp L6 transistor Schottky transistor
Text: PMEM1505PG PNP transistor/Schottky rectifier module Rev. 01 — 26 May 2004 Product data sheet 1. Product profile 1.1 General description Combination of an PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
|
Original
|
PDF
|
PMEM1505PG
OT353
SC-88A)
PMEM1505NG.
smd transistor marking L6 NPN
TRANSISTOR SMD CODE PACKAGE SOT353
mosfet sot353
PMEM1505NG
PMEM1505PG
TRANSISTOR SMD MARKING CODE 26
MOSFET TRANSISTOR SMD MARKING CODE js
SMD pnp L6 transistor
Schottky transistor
|
TRANSISTOR SMD CODE PACKAGE SOT353
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 SMD TRANSISTOR MARKING DE SOT353-5 K TRANSISTOR SMD MARKING CODE transistor smd yw PMEM1505NG PMEM1505PG transistor smd code marking 420 smd transistor marking l7
Text: PMEM1505NG NPN transistor/Schottky rectifier module Rev. 02 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
|
Original
|
PDF
|
PMEM1505NG
OT353
SC-88A)
PMEM1505PG
PMEM1505NG
TRANSISTOR SMD CODE PACKAGE SOT353
MOSFET TRANSISTOR SMD MARKING CODE A1
SMD TRANSISTOR MARKING DE
SOT353-5
K TRANSISTOR SMD MARKING CODE
transistor smd yw
PMEM1505PG
transistor smd code marking 420
smd transistor marking l7
|
smd transistor marking L6 NPN
Abstract: TRANSISTOR SMD CODE PACKAGE SOT353 NPN SMD MARKING CODE L6 "PNP Transistor" SMD TRANSISTOR MARKING DE marking HE sot353-5 113 marking code PNP transistor K TRANSISTOR SMD MARKING CODE D K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
Text: PMEM1505PG PNP transistor/Schottky rectifier module Rev. 02 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description Combination of an PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
|
Original
|
PDF
|
PMEM1505PG
OT353
SC-88A)
PMEM1505NG
PMEM1505PG
smd transistor marking L6 NPN
TRANSISTOR SMD CODE PACKAGE SOT353
NPN SMD MARKING CODE L6
"PNP Transistor"
SMD TRANSISTOR MARKING DE
marking HE sot353-5
113 marking code PNP transistor
K TRANSISTOR SMD MARKING CODE
D K TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE A1
|
BFC505
Abstract: MBG20 IC vco 900 1800 mhz MGG216
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband cascode transistor
|
Original
|
PDF
|
BFC505
OT353
BFC505
MBG20
IC vco 900 1800 mhz
MGG216
|
BFC520
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10 Philips Semiconductors Product specification NPN wideband cascode transistor
|
Original
|
PDF
|
BFC520
OT353
SCA55
127127/00/03/pp12
BFC520
|
|
BFE520
Abstract: SOT353 transistor MJE -1103 sot353b transistor bf 175
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFE520 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor
|
Original
|
PDF
|
BFE520
OT353B
BFE520
SOT353
transistor MJE -1103
sot353b
transistor bf 175
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
|
Original
|
PDF
|
LMUN5311DW1T1G
LMUN5311DW1T1G
|
MARKING 27h
Abstract: No abstract text available
Text: SUR527H Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1202 chips in SOT-353 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
|
Original
|
PDF
|
SUR527H
SRC1202
OT-353
SUR527H
OT-353
KSD-R5R011-001
KSD-R5R011-001
MARKING 27h
|
2X transistor sot 353
Abstract: marking 2X
Text: SUR521H Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1207 chips in SOT-353 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
|
Original
|
PDF
|
SUR521H
SRC1207
OT-353
SUR521H
OT-353
KSD-R5R006-000
KSD-R5R006-000
2X transistor sot 353
marking 2X
|
KSD-R5R020-000
Abstract: No abstract text available
Text: SUR537H Semiconductor Epitaxial planar PNP silicon transistor Description • Dual chip digital transistor Features • Two SRA2211 chips in SOT-353 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
|
Original
|
PDF
|
SUR537H
SRA2211
OT-353
SUR537H
OT-353
KSD-R5R020-000
KSD-R5R020-000
|
Untitled
Abstract: No abstract text available
Text: SUR523H Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1203 chips in SOT-353 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
|
Original
|
PDF
|
SUR523H
SRC1203
OT-353
SUR523H
OT-353
KSD-R5R008-000
KSD-R5R008-000
|
Untitled
Abstract: No abstract text available
Text: SUR481H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • Digital transistor Features • Both SRC1210 chip and SRA2210 chip in SOT-353 package Ordering Information Type NO. Marking SUR481H Package Code X4 SOT-353 Outline Dimensions
|
Original
|
PDF
|
SUR481H
SRC1210
SRA2210
OT-353
OT-353
KST-5002-000
-10mA,
|
Untitled
Abstract: No abstract text available
Text: SUR482H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • Digital transistor Features • Both SRC1204 chip and SRA2219 chip in SOT-353 package Ordering Information Type NO. Marking SUR482H Package Code X5 SOT-353 Outline Dimensions
|
Original
|
PDF
|
SUR482H
SRC1204
SRA2219
OT-353
OT-353
KST-5003-000
-10mA
-10mA,
|
SRC1206
Abstract: SUR526H
Text: SUR526H Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1206 chips in SOT-353 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
|
Original
|
PDF
|
SUR526H
SRC1206
OT-353
OT-353
KSD-R5R010-000
SUR52nents
SUR526H
|
Untitled
Abstract: No abstract text available
Text: SUR527H Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1202 chips in SOT-353 package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information
|
Original
|
PDF
|
SUR527H
SRC1202
OT-353
OT-353
KSD-R5R011-000
|