TRANSISTOR T 04 27 Search Results

3PN0604

Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
Contextual Info: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow

3PN06L04

Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
Contextual Info: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow

SLo 380 R

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC618 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor BC618 FEATURES

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

bvc62

Abstract: STR 734
Contextual Info: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification

ulm 2003

Abstract: ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ULN2003 ac ULN2004N
Contextual Info: ULN2003/04 Signetics High V o lta g e /H ig h Current Darlington Transistor Arrays Product Specification L in e a r P r o d u c t s D E S C R IP T IO N These high voltage, high current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a

EN4094

Contextual Info: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor

BD131

Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
Contextual Info: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.

sot23 ria marking

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 80 V).

55N10

Abstract: transistor 60n06 MTM55N08 MTM60N05 60N06 60N05 55N08 55N08/M
Contextual Info: MOTOROLA SEMICONDUCTOR MTM55N08 MTM55N10 MTM60N05 MTM60N06 TECHNICAL DATA D i'signtM -’s D a t a 55 and 60 AMPERE N-CHAIMNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR rDS on = 0 04 0HM 80 and 100 VOLTS These TM OS Power FETs are designed for low voltage, high

Contextual Info: TO SH IBA GT60M104 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 6 0 M 1 04 HIGH POW ER SW ITCHING APPLICATIONS U nit in mm High Input Impedance High Speed : tf= 0 .4 /is Max. Low Saturation Voltage : V q e (sat) = 3 '7 v (Max.)

10N25

Contextual Info: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES

BFP540

Abstract: Transistor BFP540 BGB540 GPS05605 T0559
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,

PEMB10

Abstract: PEMB1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Jun 27 2003 Nov 04 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors;

PMSS3904

Abstract: PMSS3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 FEATURES PINNING • Low current max. 100 mA

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 PINNING FEATURES • Low current max. 100 mA

TRANSISTOR 185 846

Abstract: K 2225 transistor diode rj 93 kd62
Contextual Info: POÜJEREX INC m NBŒ X 3*\Z D • 7S b S 1 GDDMS'IM Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 92 5-7 272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43)41.14.14 7 mPRX T '22-25' KD624530 Dual Darlington

230Z

Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Contextual Info: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB

SMD TRANSISTOR MARKING P28

Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Contextual Info: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes

BP317

Abstract: PMSS3904 PMSS3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMSS3904 NPN switching transistor Product specification Supersedes data of 1997 Sep 03 1999 May 27 Philips Semiconductors Product specification NPN switching transistor PMSS3904 FEATURES PINNING • Low current max. 100 mA

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

transistor s250

Abstract: photo diode motion sensor Photo Gap Detector
Contextual Info: SILICON SENSOR S INC 75 DE 1 0253^52 8253922 SILICON ¿ENSQRS INC TTJ□ □ 11 si SILICON SENSORS, INC. Highway 18 East Dodgeville, Wisconsin 53533 Telephone: 608 935-2707 0000374 7ëc 00374 5 D optical switch SSOS-800 SSOS-700 SSQS-700 SS0S-800 TECHNICAL BULLETIN

BU1708AX

Abstract: 7DFL
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.

lem HA

Abstract: BU1708AX
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.