TRANSISTOR T1J Search Results

MP650

Contextual Info: TOSHIBA MP6501A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MP6 50 1A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are is Isolated from Case. 6 Darlington Transistor Built Into in 1 Package

transistor T1J

Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,

transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

transistor T1J

Abstract: T1J marking
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

transistor T1J

Abstract: T1J marking
Contextual Info: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching applications, primarily in portable

cb 10 b 60 kd

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES O * Up to 5 Amps continuous collector current, up to 10 Amp peak * Very low saturation voltage * Excellent hFE specified up to 10 Amps PARTMARKING DETAIL -

nesg2101m05-t1-a

Abstract: NESG2101M05-A
Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •

D44R4

Abstract: D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6
Contextual Info: Silicon Power Pac Transistors HIGH VOLTAGE The General Electric D44R is a red, silicone encapsulated, power transistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high frequency inverters/

transistor gl 1117

Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019
Contextual Info: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:

BF 3027

Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20
Contextual Info: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:

transistor T1J

Abstract: NEC 9319 bjt npn
Contextual Info: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:

Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: Na l i o n a l Semiconductor D ecem ber 1 996 PRELIMINARY N D S 8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

IH33

Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Contextual Info: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

TEA-1035

Abstract: TEA1035
Contextual Info: DATA SHEET NEC 1 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION T he itzPA1576 is N-channel P ow er M O S FET A rray that built in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible

Contextual Info: DATA SHEET PHOTOCOUPLERS PS8602, PS8602L HIGH NOISE REDUCTION HIGH SPEED ANALOG OUTPUT TYPE 8 PIN PHOTOCOUPLER DESCRIPTION PS8602 and PS8602L is a 8-pin high speed photocoupler containing a GaAIAs LED on input side and a P-N photodiode and a high speed am plifier transistor on output side on one chip. PS8602 is in a plastic DIP Dual In-line

2SK19

Abstract: 2SK19-BL transistor 2sk19 2SK19BL dj rm cr88 Q45P
Contextual Info: 19 2S K ^ IL JC O N N-CHANNEL JUNCTION FIE LD E F F E C T TRANSISTOR O PM = • •- +ffl o PM Tuner and VHP A m p lif ie r U n it A p p lic a tio n s . in MAX. Ops i¿=>v x 9 t s * ifiX t A 7J 4 y = 2 0dB T y p . (f« 1 0 0 M H z ) NP - 2dB (T y p .) ftn -

zener n20

Abstract: NA2-N12-PN diode zener ZD 260 NA2-N12P fluorescent lamp starter 1W 12V ZENER DIODE zener diode n8 TRANSISTOR REPLACEMENT GUIDE Sunx na2n
Contextual Info: GENERAL PURPOSE & SLIM BODY AREA SENSOR NA2-N SERIES Conforming to EMC Directive Slim style for all your needs 13mm Maximum sensing height 540mm Slim body Applied for UL Recognition Flexible solutions for your on-site needs. High performance made easy. The NA2-N series offers incredibly high performance in a general purpose area sensor.

JTs smd diode

Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
Contextual Info: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­

ks52

Abstract: TNU 175 KS524505 A60e KS221K0510
Contextual Info: 729* £ ? i PUW EREX IN C ~ ^ D lF | T S T M b Z l OOODÖTS 5 Single Darlington T R A N S IS T O R M odules Dim A B C D E F G H J K L Inches 2.09 Max 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± .0 0 8 .216 Dia Millimeters 53 Max 36 22 5.5 3 5 7 9 8 43.3 ± .2

1032AR

Abstract: SOT-23 marking t1c ADM1032ARZ ADM1032 transistor T1J 2N3906 1032AR01 marking code 8 lead soic-n package analog devices
Contextual Info: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual−channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can

SH-31R

Abstract: SH-33R SU-77 height sensor SH-32R su7p m204 timer synchro sensor SH-21 SH-72
Contextual Info: PHOTOELECTRIC SENSORS SU-7 SERIES SH SERIES MS-AJ Sensor Mounting Stand Amplifier-separated Slim Body Automatic Sensitivity Setting Photoelectric Sensor PM2 Micro PM Simple and Suitable for Compact Design CHX-SC2 SU-7/SH SS-A5 Sensor Checker Amplifier-separated Type

1032AR

Abstract: 0250C SOT23 NPN marking 4d T1C MSOP-8 ADM1032
Contextual Info: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual−channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can