TRANSISTOR T4B Search Results

Contextual Info: N APIER PHILIPS/DISCRETE b=lE D • bbS3T31 003=1136 T4b APX BLV92 _J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

transistor t4B

Abstract: BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 0D31521 1557 transistor SOT173 SOT173 RF transistor
Contextual Info: i Philips Semiconductors 53*131 ^ DD31SE 1 T4b M i APX Product specification PNP 5 GHz wideband transistor . — — DESCRIPTION BFQ23C N AWER PHILIPS/DISCRETE PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT173X micro-stripline envelopes. It is

BC856BW

Contextual Info: ^ 5 3 ^ 3 1 002447b T4b « A P X Philips Semiconductors PNP general purpose transistor BC856W; BC857W; BC858W N AMER PHILIPS/DISCRETE FEATURES Product specification b?E T> PIN CONFIGURATION • S- mini package. DESCRIPTION E l EL - 1 c P N P transistor in a plastic SOT323

transistor a12t

Abstract: transistor d30
Contextual Info: m N E R B C KD224575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 75 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

BUK438-500B

Contextual Info: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor t4B

Abstract: SOT23 Code T4B transistor marking LG CMPT2369 HIGH SPEED SWITCHING NPN SOT23 transistor marking code lg
Contextual Info: Central" CMPT2369 Sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CM PT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching

transistor t4B

Abstract: aatj BC856BW MARKING H4 3F lem HA BC856AW BC856W BC857AW BC857BW BC857W
Contextual Info: bbS3T31 Philips Sem iconductors GG2447b T4b « A P X _ PNP general purpose transistor Product specification BC856W; BC857W; BC858W N AMER P H I L I P S / D I S C R E T E FEATURES b7E ]> PIN CONFIGURATION • S- mini package. DESCRIPTION

Contextual Info: I Orderingnumber: E.N 1637B _ 2SC3638 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.

Contextual Info: KSC2859 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA1182 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

D73 transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ISSUE 3 -J U N E 94_ FEATURES * * 3 Amps continuous current Up to 10 Amps peak current * Very low saturation voltage * * Excellent gain characteristics up to 3 Amps

M113

Abstract: t4bu SD1013-3
Contextual Info: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP

i354

Abstract: 2N7222 IRFM440 IRFM440D i-354
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
Contextual Info: Infineo n |m p ,° v e d technologies f c — BUZ 104SL • SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance f l DS on • Avalanche rated Continuous drain current

2SC2570

Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

Contextual Info: Optical disc ICs 4-channel BTL driver for CD players BA6197FP The BA6197FP, an IC fo rC D players, has a 4-channel BTL driver, 5V regulator attached PNP transistor required , stan­ dard operational amplifier, and internal reset output linked to an internal thermal shutdown circuit. The driver has gain

Contextual Info: Optical DiSC ICs Optical disc ICs 14-channel BTL driver for CD players | BA6997FP/BA6997FM The BA6997FP and BA6997FM, both designed for CD players, have an internal 4-channel BTL driver and 5V regula­ tor which requires attached PNP transistor , as well as switches for the 5V regulator and temperature monitor pins.

SC08010

Abstract: STH26N25 STH26N25FI
Contextual Info: 7 ^ 2 3 7 0045^35 173 « S G T H STH26N25 STH26N25FI SGS-THOMSON ^ SraOiDûS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 26N 25 STH 26N 25FI V d ss RDS(on Id 250 V 250 V < 0.11 n < 0 .1 1 n 26 A 16 A I . . . . . TYPICAL FtDS(on) = 0.085 Q AVALANCHE RUGGEDNESS TECHNOLOGY

Contextual Info: 7=151237 OOMt.B'n 715 • *7# S G T H _ S C S -T H O M S O N ¡ILIlOir^OMDOi S T P 2 5 N 05 S T P 2 5 N 0 5 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N05 STP25N05FI V d ss RDS on Id 50 V 50 V < 0.065 Q < 0.065 Q 25 A

bly87c

Abstract: transistor tt 2222 yl 1060
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ttS3T31 ODSTbbb 415 H A P X BLY87C Jl V.H.F. POWER TRANSISTOR N-P-N silico n planar e pitaxial tra nsistor intended fo r use in class-A, B and C operated m obile, h.f. and v.h.f. transm itters w ith a nom inal su p p ly voltage o f 13,5 V . T h e tra nsistor is resistance sta bilize d and

MARKING CODE R7

Abstract: IEC-134 transistor t4B IEC134 MARKING CODE R7 RF TRANSISTOR common emitter amplifier TRANSISTOR BL 100 LAE6000Q
Contextual Info: 7 LAE6000Q M A IN T E N A N C E T Y P E PHILIPS INTERNATIONAL 5bE J> m 7110fl2b D 04blô0 GOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN tran sisto r fo r co m m o n -e m itte r class-A low-noise a m p lifie rs up to 4 G Hz. Self-aligned process e n tire ly ion im planted and gold sandwich m e ta lliza tio n ensure an o p tim u m te m perature p ro file ,

CM300DY-24E

Abstract: L120A BP107 fjl diode AL6345-25.0.391-00
Contextual Info: b4E D • poüierex 7E T4b 21 0G0b7Sb Obb « P R X inc Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 CM300DY-24E DU3l IG B TMOD

BR101

Abstract: transistor T43 npn transistor AG TRANSISTOR n-p-n power transistor planar transistor c 5331 transistor ag philips br101 BR101A Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE D • ^53=131 DDE7&EL 23H BR101 I SILICON CONTROLLED SWITCH The 8R 101 is a planar p-n-p-n switch in a T O -72 metal envelope, intended fo r tim e base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/

KE721K03

Contextual Info: 3TE D POWEREX INC • 00GMM3M A « P R X mMMVDL Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Duranti, BP107,72003 Le Mans, France (43) 41.14.14 KE721KÓ3HB High-Beta r - 3 3 - j r S iX -D a r U fig t O n