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    TRANSISTOR T9018 Search Results

    TRANSISTOR T9018 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T9018 Datasheets Context Search

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    transistor t9018

    Abstract: 9018 T9018 T9018F transistor 9018 NPN
    Text: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage


    Original     		PDF T9018 1100MHz 100uA 062in 300uS T9018F transistor t9018 9018 transistor 9018 NPN

    transistor t9018

    Abstract: 9018 T9018F
    Text: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage


    Original     		PDF T9018 1100MHz 100uA 062in T9018F 300uS transistor t9018 9018