TRANSISTOR TD-100 LE Search Results

diode sg 94

Abstract: GC522 diode sg 64
Contextual Info: r Z Z SGS-THOMSON Ä 7# S TD 2 N 50 Raoei ILE gra©M][](£S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 2N 50 V dss RDS(on Id 500 V < 5.5Í1 2 A • . . . . TYPICAL Ros(on) = 4.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: * 7# TYPE S TD 9N 10 SGS-THOMSON [MOeiMillLieraeiDIgS S T D 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0 .2 7 Q. 9 A TYPICAL RDS(on) = 0.23 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: *57 SGS-THOMSON TYPE S TD 6N 10L STD6N10L m N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss R DS on Id 100 V < 0 .4 5 Ü 6 A • • . . ■ . . ■ TYPICAL RDS(on) = 0.4 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SGS-THOMSON * 5 i L i O 7 M K I S T D 3 N 3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 3N 30L V dss R DS on Id 300 V < 1.4 a 3 A . . . . • TYPICAL RDs(on) = 1.15 0 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SGS-THOMSON :[Li ¥mî@ESgDe m S TD 2 N A 50 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD2NA50 V dss RDS on Id 500 V < 4 a 2.2 A . . . . . . . . TYPICAL RDS(on) = 3.25 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

K2100

Abstract: STD6N10L
Contextual Info: S G S - T H O M S O N ¿ 5 S T D 6N 1 0 L ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TD 6N 10L V dss RDS on Id 100 V < 0.4 5 C l 6 A • . ■ . . . ■ . TYPICAL RDS(on) = 0.4 Q. AVALANCHE RUGGED TECHNOLOGY

BUK102-50GL

Abstract: BUK102
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK101-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

buk10150gl application notes

Abstract: BUK101-50GL
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK108-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other

BUK100-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK109-50GL

Abstract: buk109
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other

BUK110-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other

BUK100-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK100-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

MOSFET TRANSISTOR SMD MARKING CODE nh

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other

539 MOTOROLA transistor

Abstract: AN569 MTP10N10EL mosfet transistor 400 volts.100 amperes motorola TL 741
Contextual Info: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Logic Level TMOS E-FET. Power Field Effect Transistor Designer's MTP10N10EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

ss129

Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
Contextual Info: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3

PHD3N20L

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking

PHD3055L

Abstract: PHP3055E PHP3055L
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking

PHP3055E

Abstract: PHX3055E PHX3055L
Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device features high avalanche energy capability, stable blocking

PHP3055E

Abstract: PHP3055L
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

PHP3N20L

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

Contextual Info: ACE4613B Complementary Enhancement Mode Field Effect Transistor Description The ACE4613B uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other