TRANSISTOR THE 6 MHZ Search Results

1417 transistor

Abstract: max 1417 1417-6A
Contextual Info: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.

1014-6A

Contextual Info: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

20258

Abstract: IEC-68-2-54 1301P
Contextual Info: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts m inim um outp ut power, it may be used fo r both CW and PEP

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES 5 6 * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ 1 EQUIVALENT CIRCUIT 3 2 R1

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 6 5 R1 4 R2

TRANSISTOR J477

Abstract: J890
Contextual Info: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

2sc4226

Abstract: 2SC4226 APPLICATION NOTES
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA810T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The µPA810T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS

marking R24

Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)

2SC5006

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to

2SC5007

Abstract: 2SC5010 nec 5201 3771 nec
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to

Contextual Info: NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 6 The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base

ic 4017 pin configuration

Abstract: 2SC4959 2SC5193 IC 7422 TRANSISTOR NPN 16085 c 5083 transistor
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor µPA833TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) The µPA833TF has two different built-in transistors (Q1 2.10±0.1 and Q2) for low noise amplification in the VHF band to UHF

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,

TI 9023 IC data

Abstract: 2SC4226 APPLICATION NOTES
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS

sem 5025

Abstract: NEC JAPAN 2415 on 5297 transistor transistor d 13009 9622 transistor LA 7687 a La 7833 la 7687 t 3866
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /¿PA821TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 THIN-TYPE SMALL MINI MOLD The //PA821TF has 2 built-in low-voltage transistors which are PACKAGE DRAWINGS (Unit: mm)

pnp 8 transistor array

Abstract: npn 8 transistor array transistor Ic 1A NPN UNA0233 6 "transistor arrays" ic pnp array transistor array pnp NPN SMALL SIGNAL TRANSISTOR NPN transistor 1a transistor 200ma pnp
Contextual Info: Small Signal Transistor Arrays UNA0233 Transistor array to drive the small motor • Features ● ● ● ● Unit: mm Small and lightweight Low power consumption Low-voltage drive With 6 elements incorporated 1.5±0.1 0.8 5.5±0.3 14 6.5±0.3 14-0.4±0.1

Contextual Info: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with

AVF250

Abstract: ASI10571
Contextual Info: AVF250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AVF250 is a high power ClassC transistor designed for IFF/BME/TACAN applications in 1025-1150 MHz range. ØD C E F G H FEATURES:

PA1728

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1728 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain