TRANSISTOR THEMAL Search Results

TRANSISTOR THEMAL Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR THEMAL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
63a17 Abstract: FDT439N SOT223 Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high	Original	FDT439N 63a17 FDT439N SOT223	PDF
CBVK741B019 Abstract: F63TNR F852 FDT439N PN2222A 63a30 Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high	Original	FDT439N CBVK741B019 F63TNR F852 FDT439N PN2222A 63a30	PDF
F852 transistor Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high	Original	FDT439N F852 transistor	PDF
Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high	Original	FDT439N	PDF
FDD603AL Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This	Original	FDD603AL FDD603AL	PDF
CBVK741B019 Abstract: F63TNR FDD603AL FDD6680 Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This	Original	FDD603AL CBVK741B019 F63TNR FDD603AL FDD6680	PDF
NDS9933A Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior	Original	NDS9933A NDS9933A	PDF
Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior	Original	NDS9933A	PDF
Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior	Original	NDS9933A	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior	Original	NDS9933A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor	PDF
603AL Abstract: marking 603AL transistor Contextual Info: EMI C O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, D M O S technology. This	OCR Scan	FDD603AL 603AL, 603AL marking 603AL transistor	PDF
Contextual Info: S E M IC O N D U C T O R tm NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description This P-Channel enhancement mode power field ef • -2.8 A, -20 V. RDS on = 0.14 « @ VQS = -4.5 V fect transistor is produced using Fairchild’s propri	OCR Scan	NDS9933A DC/95	PDF
FDD6030L Contextual Info: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This	Original	FDD6030L FDD6030L	PDF
FDD6030L Abstract: CBVK741B019 F63TNR FDD6680 Contextual Info: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This	Original	FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680	PDF

ZENER SINGLE COLOR CODE Abstract: CBVK741B019 F63TNR FDG313N FDG6302P SC70-6 Contextual Info: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Original	FDG313N ZENER SINGLE COLOR CODE CBVK741B019 F63TNR FDG313N FDG6302P SC70-6	PDF
6v battery charger circuit diagram Abstract: GE battery management system SC806A Contextual Info: SC806 Miniature High Current Lithium-Ion Battery Charger POWER MANAGEMENT Description Features Fully integrated charger with FET pass transistor, The SC806 is a fully integrated, single cell, constant-current cc /constant-voltage (cv) Lithium-Ion battery charger	Original	SC806 150/Rterm 1500/Rprog CV-100mV SC806 MLPD-10, 6v battery charger circuit diagram GE battery management system SC806A	PDF
Contextual Info: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Original	FDG313N	PDF
FDG313N Abstract: SC70-6 Contextual Info: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Original	FDG313N FDG313N SC70-6	PDF
SC806 Abstract: Miniature High Current Lithium-Ion Battery Charger NTC-49 12 volts,15 amps Regulated Power Supply Schematic Diagram SC806IMLTRT Contextual Info: SC806 Miniature High Current Lithium-Ion Battery Charger POWER MANAGEMENT Description Features Fully integrated charger with FET pass transistor, The SC806 is a fully integrated, single cell, constant-current cc /constant-voltage (cv) Lithium-Ion battery charger	Original	SC806 SC806 800mA CV-100mV MLPD-10, MLPD-10 Miniature High Current Lithium-Ion Battery Charger NTC-49 12 volts,15 amps Regulated Power Supply Schematic Diagram SC806IMLTRT	PDF
Contextual Info: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Original	FDG313N	PDF
MMFT2406T1 Abstract: MMFT2406T3 T2406 Q223 Contextual Info: MOTOROU SEMICONDUCTOR — — TECHNICAL Order this document by MM~2406T1/D DATA Medium Power Field Effect Wansistor N-Channel Enhancement Mode Silicon Gate TMOS E-FETM SOT-223 for Surface Mount I This TMOS medium power field effect transistor is designed for	Original	2406T1/D OT-223 Q1-2447 602-2HMg MMH2406T1/D MMFT2406T1 MMFT2406T3 T2406 Q223	PDF
2SK1252 Abstract: transistor themal Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSffl HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER,RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • 4-Volt Gate Drive • Low Drain-Source ON Resistance : RDS(0N)= 0.42Q (Typ.)	OCR Scan	100/xA 10/is 2SK1252 transistor themal	PDF
Contextual Info: FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductors proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This	Original	FDG314P	PDF
Contextual Info: FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This	Original	FDG314P	PDF

TRANSISTOR THEMAL Search Results

TRANSISTOR THEMAL Result Highlights (5)

TRANSISTOR THEMAL Datasheets Context Search

63a17

CBVK741B019

F852 transistor

FDD603AL

CBVK741B019

NDS9933A

CBVK741B019

603AL

FDD6030L

FDD6030L

ZENER SINGLE COLOR CODE

6v battery charger circuit diagram

FDG313N

SC806

MMFT2406T1

2SK1252