Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR TI 310 Search Results

    TRANSISTOR TI 310 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TI 310 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    65E6280

    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6


    Original
    IPx65R280E6 IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 65E6280 PDF

    65E6280

    Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6


    Original
    IPx65R280E6 IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 65E6280 to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipw65r ipa65r PDF

    transistor pin socket

    Abstract: Transistor 4515 TO100 TO5 transistor base TRANSISTOR 718
    Contextual Info: R TI F I ED 2 T Y CE 900 ISO Q I UAL TO-3, TO-5, TO-100 TRANSISTOR SOCKETS SOCKETS FOR TO-5 & TO-100 HEAVY DUTY SOCKET FOR TO-3 Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts. .016 to .020


    Original
    O-100 O-100 transistor pin socket Transistor 4515 TO100 TO5 transistor base TRANSISTOR 718 PDF

    transistor GC cd

    Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol


    OCR Scan
    APT45GL100BN transistor GC cd PDF

    to-66 power transistor sockets

    Abstract: ASTM-D4066 ASTM-D-4066 TRANSISTOR d 718 4606 4617 transistor sockets Transistor 4733 TRANSISTOR C 718 mica 4608
    Contextual Info: R TI F I ED TRANSISTOR SOCKETS KITS 2 T Y CE 900 ISO Q I UAL • LABOR SAVING • EASY MOUNTING TO CHASSIS • BETTER THERMAL EFFICIENCY An improved, simpler, less costly method of semiconductor mounting. Avoid soldering directly to the semiconductor. Easier to service,


    Original
    ASTM-D4066 to-66 power transistor sockets ASTM-D4066 ASTM-D-4066 TRANSISTOR d 718 4606 4617 transistor sockets Transistor 4733 TRANSISTOR C 718 mica 4608 PDF

    4606

    Abstract: ASTM-D4066 A 4606 TO-66 SOCKET 620 transistor 4617 brass screws only 4651 Keystone to-66 power transistor sockets TRANSISTOR 718
    Contextual Info: R TI F I ED TRANSISTOR SOCKETS KITS 2 T Y CE 900 ISO Q I UAL • LABOR SAVING • EASY MOUNTING TO CHASSIS • BETTER THERMAL EFFICIENCY An improved, simpler, less costly method of semiconductor mounting. Avoid soldering directly to the semiconductor. Easier to service,


    Original
    ASTM-D4066 4606 ASTM-D4066 A 4606 TO-66 SOCKET 620 transistor 4617 brass screws only 4651 Keystone to-66 power transistor sockets TRANSISTOR 718 PDF

    BUK416-200AE

    Abstract: t7700
    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT227B PIN 1 2 3 4 QUICK REFERENCE DATA SYMBOL isloi DS ON MAX. MAX. UNIT -200AE 200 63 310 0.035 -200BE 200 55 310 0.045 V A W n PARAMETER BUK416 Drain-source voltage


    OCR Scan
    BUK416-200AE/BE BUK416 -200AE -200BE OT227B 8UK416-2OO0E BUK416-200AE t7700 PDF

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original
    VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191 PDF

    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) PDF

    GTL2003

    Contextual Info: SN74GTL2003 SCDS305 – FEBRUARY 2011 www.ti.com 8-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR Check for Samples: SN74GTL2003 FEATURES APPLICATIONS • • • • • • • • QFN PACKAGE TOP VIEW terminal 1 index area 1 GND • • PW PACKAGE (TOP VIEW)


    Original
    SN74GTL2003 SCDS305 000-V A114-B, GTL2003 PDF

    DD 127 D TRANSISTOR

    Abstract: diode d10d1 D10-D1 d10d1 S10-S1 d4s5 C101 GK2010 GTL2010 SN74GTL2010PWR
    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) DD 127 D TRANSISTOR diode d10d1 D10-D1 d10d1 S10-S1 d4s5 C101 GK2010 GTL2010 SN74GTL2010PWR PDF

    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) PDF

    diode d10d1

    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) diode d10d1 PDF

    SN74GTL2010PWR

    Abstract: C101 GK2010 GTL2010 d10d1
    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) SN74GTL2010PWR C101 GK2010 GTL2010 d10d1 PDF

    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) PDF

    diode d10d1

    Abstract: D10D1
    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) diode d10d1 D10D1 PDF

    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) PDF

    gtl2003

    Abstract: GK2003
    Contextual Info: SN74GTL2003 www.ti.com SCDS305A – FEBRUARY 2011 – REVISED MARCH 2013 8-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR Check for Samples: SN74GTL2003 FEATURES APPLICATIONS • • • • • • • • • QFN PACKAGE TOP VIEW terminal 1 index area PW PACKAGE


    Original
    SN74GTL2003 SCDS305A 000-V A114-B, gtl2003 GK2003 PDF

    Contextual Info: SN74GTL2003 www.ti.com SCDS305A – FEBRUARY 2011 – REVISED MARCH 2013 8-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR Check for Samples: SN74GTL2003 FEATURES APPLICATIONS • • • • • • • • • QFN PACKAGE TOP VIEW terminal 1 index area PW PACKAGE


    Original
    SN74GTL2003 SCDS305A PDF

    SN74GTL2010PWR

    Abstract: C101 GK2010 GTL2010
    Contextual Info: GTL2010 10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR www.ti.com SCDS221 – SEPTEMBER 2006 FEATURES • • • • • • • • • • Provides Bidirectional Voltage Translation With No Direction Control Required Allows Voltage Level Translation From 1 V up


    Original
    GTL2010 10-BIT SCDS221 000-V A114-4) SN74GTL2010PWR C101 GK2010 GTL2010 PDF

    TPS701

    Abstract: PNP transistor 263 TI mosfet 20-PIN TL3317 TLV2217-33 TPS71025 TPS77333 TL750Lxx SLVA079
    Contextual Info: Power Management Texas Instruments Incorporated Advantages of using PMOS-type low-dropout linear regulators in battery applications By Brian M. King Applications Specialist Introduction The proliferation of battery-powered equipment has increased the demand for low-dropout linear regulators


    Original
    SLYT161 TPS701 PNP transistor 263 TI mosfet 20-PIN TL3317 TLV2217-33 TPS71025 TPS77333 TL750Lxx SLVA079 PDF

    GRM188R71C333KA01

    Abstract: pMOS transistor TPS3809K33 TPS3809L30 TPS78601 TPS79601 SLVA159 transistor TI 310
    Contextual Info: PR215 Spartan -3 Design 3 Single-Channel Linear Regulator Power Management Solution Providing up to 1.4 A from VIN = 3.3 V and 800 mA from VIN = 5.0 V FEATURES: - - Independent linear regulators allow higher power dissipation than an integrated dual-channel solution.


    Original
    PR215 TPS79xxx GRM188R71C333KA01 pMOS transistor TPS3809K33 TPS3809L30 TPS78601 TPS79601 SLVA159 transistor TI 310 PDF

    pr210

    Abstract: SI3460DV equivalent pMOS transistor slva118.pd slva176 TPS79xx
    Contextual Info: SLVL004 XILINXPWR-081 HPA-081 Single-Channel Linear Regulator Power Management Solution Providing ICCINT up to 1.4 A from VIN = 3.3 V and 800 mA from VIN = 5.0 V SUPPORTS : - Spartan -3 Design 3 (PR215) - http://focus.ti.com/lit/ml/slva176/slva176.pdf


    Original
    SLVL004 XILINXPWR-081 HPA-081) PR215) com/lit/ml/slva176/slva176 PR209) com/lit/ml/slva170/slva170 PR209 PR210) com/lit/ml/slva171/slva171 pr210 SI3460DV equivalent pMOS transistor slva118.pd slva176 TPS79xx PDF

    pMOS transistor

    Abstract: 4825 chip audio TLC7705 TLC7733 TPS64203 PR213 TPS79xx IHSM-4825-RE-4R7L 470-milliohm
    Contextual Info: PR213 Spartan -3 Design 1 TPS64203 Switching DC/DC Controller-Based Power Management Solution Providing up to 3 A from VIN = 5.0 V or 3.3 V FEATURES: - - - Tiny SOT-23 switching DC/DC controller, U2, delivers up to 3 A at low cost. Easily customizable design allows for maximum cost control by:


    Original
    PR213 TPS64203 OT-23 TPS79xxx pMOS transistor 4825 chip audio TLC7705 TLC7733 PR213 TPS79xx IHSM-4825-RE-4R7L 470-milliohm PDF