TRANSISTOR TIC 106 Search Results

Contextual Info: MÛi€Sr! Preliminary Specifications M an A M P com pany 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .0 0 SOT-23 Features • 1 5 dB N o ise F ig u ie a t 0 5 m A • 13 dB G a i l a t 1 G H z • 14 GH z fp • Low C o s tP la s tic P a ck a g e

2N4863

Abstract: PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066
Contextual Info: •M k / 2 ÔA oi:4.4 P I ELE CT RO NICS INC Ho * ¡M T E R IM D E | D 0 M 3 S T 2 0DDD144 S | ». nELEXTRonics r ninc. B U L L E T IN S u b j e c t to R e v i s i o n ' :.T V * POWER TRANSISTOR ENGINEERING BULLETIN^ y e 3 3 p IW i t h o u t N o tic e -, o s "

sw 2604 ic

Abstract: 2603 dual transistor ic sw 2604 Sw 2604 2603L
Contextual Info: DATA SHEET PHOTOCOUPLERS PS2603, PS2604, PS2603L, PS2604L HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE 6 PIN PHOTOCOUPLER — N E P O C S e rie s — DESCRIPTION P S 2603, P S 2 604 and P S 2 603 L, P S 2 6 0 4 L are o p tic a lly co u p le d is o la to rs c o n ta in in g a G a A s light em ittin g d io d e

ujt firing circuits of scr

Abstract: UJT APPLICATION scr firing circuit UJT triggering circuit ujt timer CIRCUIT applications of ujt unijunction application note ujt free Complementary UJT D5K1 ujt transistor
Contextual Info: Complementary Unijunction Transistor □ e1 D5K1 1 C O M PLEM EN TA R Y U N IJU N C T IO N T h e G e n e ra l E le c tr ic D 5K 1 C o m p le m e n ta ry U n iju n c tio n T r a n s is t o r is a silic o n p la n a r , m o n o lith ic in te g r a te d c ir c u it. I t h a s u n iju n c tio n c h a r a c te r is tic s w ith

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

AF106

Abstract: 40HHZ AF108
Contextual Info: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

transistor IR 324 C

Abstract: transistor selection guide
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency

GP500

Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
Contextual Info: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

transistor tic 106 N

Contextual Info: S AMSUNG ELECTRONICS INC 42E MPSA42 D B OQG^ObS 1 E3SMÚK NPN EPITAXIAL SILICON TRANSISTOR s 2r \ - \ s ' HIGH VOLTAGE TRANSISTOR • C o lle c to r-E m ltte r V oltage: VCEo =300V • C o lle c to r D is s ip a tio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

UN 2911

Contextual Info: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70

level shifter . CMOS to TTL

Abstract: msi cr 430 SSC2000 ttl inverter operation PF516
Contextual Info: EPSON P F 5 1 6 -0 7 SSC2000 Series Standard Cell 'Built-in Analog Circuit 'Internal Two Power Supplies Level Shifter 'W ide Operating Voltage: 0.9 V to 6.0 V 'U p to 11,000 gates • DESCRIPTION The S S C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage

DB 22 AR transistor smd

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and

BUK106-50US

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK106-50L

Abstract: BUK106-50S diode 06-50S
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general

4-1070

Abstract: 45N10E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r T O -2 4 7 w ith Is o la te d M ounting H ole MTW45N10E M otorola Preferred Device TMOS POWER FET 45 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

LG 21 fs 4

Abstract: TRANSISTOR FS 10 TM
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK106-50US BUK106-50LP/SP For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

mm glass lens phototransistor

Abstract: wo f6 DIODE
Contextual Info: SIEMENS BPX43 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm .244 (6.2) .212 (5.4) .570(1451 .492 (12.5) -U ¿0 0 (5 .1 ) 9 (4.8) V 0.100,-(2.54)'- T 0.01 * f6 (0.45) Base '‘Collector 0 .18 9(4.6) 0.181 (4.6) I-106, w .220 (5.6) .206 (5.3)

transistor tic 106 N

Abstract: bly power transistor transistor tic 226 transistor SE 431
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C

HA11123

Abstract: in60p diode IN60P transistor c114 est HA-11123 TOKO fi transformer MV4FLC-20000AG Intermediate frequency transformer 455 TOKO IF Transformer 10,7MHz HIA11123
Contextual Info: HA11123 FM /AM Radio Receiver System Hitachi HIA11123 is an IC system that has been developed for FM/AM radios and modular stereos. It has the following functions and features. • FUNCTIONS FM • IF Amp. • Signal meter drive circuit • A F C circuit • FM demodulation signal amplification circuit

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs