TRANSISTOR TT 2222 Search Results

LB121A

Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Contextual Info: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C

smd code HF transistor

Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
Contextual Info: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor tt 2222

Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
Contextual Info: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power

kb 778 o g 5

Abstract: 3e tRANSISTOR kb 778 UA61
Contextual Info: — S 7 • $ / — h f ê E 'ê ' > i> 7 * 9 -7 h Com pound Transistor / //PA 6118C ü, f# (c K-y V9 A 7 ¿ P A <r>Y'ÿ A °F IP 6 1 1 8 C t 7 * ffl 8 Elï# )StfO ] - 7 > y X ^ T H ' T f „ T T L ^ M O S L S I^ tB ÎJÎS f- d ^ h - fr- C , ^ - X fc îfc fc iS lIIR t

ic SE 135

Abstract: 00jT K49H
Contextual Info: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •

HT - 0886

Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2

RM4T

Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
Contextual Info: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ

BA1A4M-T

Abstract: BA1A4M 3773A T108 ptc T108 t0429
Contextual Info: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]

TRANSISTOR BJ 033

Abstract: 2SB1068 JAN 5751 m5ss
Contextual Info: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm

transistor AFR 16

Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
Contextual Info: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE

la 5531

Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Contextual Info: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£

L0742

Abstract: L0742 81 MPA1452H TL08 T460 IC-6338 093L
Contextual Info: SEC j m = f T / x r x m 'ê r y < r7 - b ^ X ^ C o m p o u n d P o w e r T ra n s is to r A / N P N l t ° ^ + '> 7 ; ^ / P ij = l > Ï '> A 1 4 5 2 H U>{ I i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use DC —DC 3 > / < — 9 •V U / 4 Y ■* - ? • U u - • 7 > 7 ° t c

PT 4107

Abstract: transistor tt 2222 Rogers 6010.5 TT 2222
Contextual Info: M / A -C O fl P E S Z 1> H 0 SbMSEGS GOODSI^ bis • MAP sm e MICROWAVE PULSED POWER TRANSISTOR PH9612 - 75 REV. PRELIMINARY * & u / A -r < M/A-COM PHI, INC. T-33-/3 DESIGN CHARACTERISTICS • High Efficiency Transistor Geometry • Broadband 960 • 1215 MHz Operation

NEC C3568

Abstract: c3568 C3568 NEC AFT85 C0471 2SA1396 2SC3568 T460
Contextual Info: '> >J =3 > s<*7— h Silicon P o w er Transistor 2SC3568 NPNX I = l> h + 9 x i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use 2S C 3568 l i f t S i t X^í 7 f > 9’m t K^=I7 - DC —DC n > -FÿVyXj't, 9, PACKAGE DIMENSIONS U n it : mm)

Contextual Info: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for

transistor tt 2222

Abstract: smd 809 x transistor transistor SMD S33
Contextual Info: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures

timer 555 dil8

Abstract: ZSCT1555 astable Multivibrator 74
Contextual Info: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery

APPLICATIONS OF astable multivibrator

Contextual Info: OBSOLETE No Recommended Replacements PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery

Contextual Info: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery

transistor tt 2222

Abstract: transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341
Contextual Info: Philips Semiconductors 1^53^31 4G5 IAPX HF/VHF power MOS transistor Product specification BLF241 N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures

L46R

Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Contextual Info: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l

transistor tt 2222

Abstract: transistor tt 2222 vertical TT 2222 Philips 2222 capacitor for transistor tt 2222 philips Trimmer 60 pf SOT123 Package 2322 151 51005 sot123 trimmer PT 10
Contextual Info: Philips S em iconductors m b b S B 'Ì B l Q 0 S CJ,Ì D C1 4 T 2 BBA PX Product specification VHF power MOS transistor — BLF225 • N AfIER PHILIPS/DISCRETE FEATURES b'ìE D PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

2SC2331

Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
Contextual Info: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )