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    TRANSISTOR V63 Search Results

    TRANSISTOR V63 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR V63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    5570

    Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package


    Original     		PDF NE34018 NE34018-T1 NE34018-T2 5570 C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08

    T1 BC558

    Abstract: max8091 t1,t2 BC548 2N3904 AT90S1200 AT90S4414 AT90S8515 BC548 BC558 BC848
    Text: AVR180: External Brown-Out Protection Features Theory of Operation • Low-Voltage Detector • Prevent Register and EEPROM For the CPU to successfully decode and execute instructions, the supplied voltage must always stay above the minimum voltage level set by the chosen


    Original     		PDF AVR180: 10/98/xM T1 BC558 max8091 t1,t2 BC548 2N3904 AT90S1200 AT90S4414 AT90S8515 BC548 BC558 BC848

    AVR180: External Brown-Out Protection

    Abstract: T1 BC558 t1,t2 BC548 AVR180 AT90S1200 AT90S4414 AT90S8515 MAX809 MAX811 BC558 transistor
    Text: AVR180: External Brown-out Protection Features • • • • • • • • Low-voltage Detector Prevent Register and EEPROM Corruption Two Discrete Solutions Integrated IC Solution Extreme Low-cost Solution Extreme Low-power Solution Formulas for Component Value Calculations


    Original     		PDF AVR180: 1051B AVR180: External Brown-Out Protection T1 BC558 t1,t2 BC548 AVR180 AT90S1200 AT90S4414 AT90S8515 MAX809 MAX811 BC558 transistor

    t1,t2 BC548

    Abstract: tBC558 AT90S1200 AT90S4414 AT90S8515 MAX809 MAX811 transistor bc548 bp T1 BC558 T1 BC558 TRANSISTOR
    Text: AVR180: External Brown-out Protection Features • • • • • • • • Low-voltage Detector Prevent Register and EEPROM Corruption Two Discrete Solutions Integrated IC Solution Extreme Low-cost Solution Extreme Low-power Solution Formulas for Component Value Calculations


    Original     		PDF AVR180: 1051B t1,t2 BC548 tBC558 AT90S1200 AT90S4414 AT90S8515 MAX809 MAX811 transistor bc548 bp T1 BC558 T1 BC558 TRANSISTOR

    External Brown-out Protection for C51 Microcontrollers with Active High Reset Input

    Abstract: t1,t2 BC548 BC548 Texas Instruments MC7805 applications Texas instruments BC558 bc888 80C51 MANUAL 80C51 MCUs LM1086-3.3 T1 BC548
    Text: External Brown-out Protection for C51 Microcontrollers with Active High Reset Input Features • • • • • • • Low-voltage Detector Prevents Register and EEPROM/Flash Corruption One Discrete Solution Integrated IC Solution Low-power/Low-cost Solution


    Original     		PDF 80C51 External Brown-out Protection for C51 Microcontrollers with Active High Reset Input t1,t2 BC548 BC548 Texas Instruments MC7805 applications Texas instruments BC558 bc888 80C51 MANUAL 80C51 MCUs LM1086-3.3 T1 BC548

    G60N

    Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
    Text: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits


    Original     		PDF AN1256 TC1410N DS01256A-page G60N Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 100n00

    IC LM7808 8V Voltage regulator

    Abstract: tl494ch UC3525 application notes LM7915 to-3 lm7812 voltage regulator spec. sheet UC3525 LM7808 TO3 LM2951CM SG3524BN National Semiconductor voltage regulator lm7812
    Text: Linear Products Cross Reference Guide Summer 2004 National Semiconductor provides a comprehensive set of support services. Product information, including sales literature and technical assistance is available through National's Customer Support Centers. Linear Products Cross Reference Guide – 2004


    Original     		PDF

    2SC2120-Y

    Abstract: 32fHVCO 2SC1959 NJW1300B
    Text: NJW1300B SIGNAL PROCESSOR FOR COLOR TFT • GENERAL DESCRIPTION The NJW1300B is a color TFT signal processor which include color signal modulator , count down circuit , RGB demodulator , RGB interface , and common pole driver , required by color TFT signal processing after Y/C separator.


    Original     		PDF NJW1300B NJW1300B 58MHz, 43MHz) 2SC2120-Y 32fHVCO 2SC1959

    NJW1300B

    Abstract: 2SA950-Y 2SA562TM 2SA950Y 2SC1959Y 2SC2120Y NJW1300BFG1 SG10 TQFP64 ADL-CP145
    Text: NJW1300B SIGNAL PROCESSOR FOR COLOR TFT • GENERAL DESCRIPTION The NJW1300B is a color TFT signal processor which include color signal modulator , count down circuit , RGB demodulator , RGB interface , and common pole driver , required by color TFT signal processing after Y/C separator.


    Original     		PDF NJW1300B NJW1300B NJW1300BFG1 58MHz, 43MHz) 2SA950-Y 2SA562TM 2SA950Y 2SC1959Y 2SC2120Y NJW1300BFG1 SG10 TQFP64 ADL-CP145

    NJW1300B

    Abstract: adl-cp145 2SC2120Y
    Text: NJW1300B SIGNAL PROCESSOR FOR COLOR TFT • GENERAL DESCRIPTION The NJW1300B is a color TFT signal processor which include color signal modulator , count down circuit , RGB demodulator , RGB interface , and common pole driver , required by color TFT signal processing after Y/C separator.


    Original     		PDF NJW1300B NJW1300B 58MHz, 43MHz) adl-cp145 2SC2120Y

    4871 marking

    Abstract: ta 7205 marking V64 sot343 NE34018 V64 SOT 23 LD SOT 423 948 LG transistor kf 508
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 3 V, ID= 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz


    Original     		PDF NE34018 OT-343) NE34018 -TI-64 24-Hour 4871 marking ta 7205 marking V64 sot343 V64 SOT 23 LD SOT 423 948 LG transistor kf 508

    transistor 8331

    Abstract: LD SOT 423 transistor marking v64 ghz kf 982 NE34018 NE34018-TI-64
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN:


    Original     		PDF NE34018 OT-343) NE34018 amplifie05 transistor 8331 LD SOT 423 transistor marking v64 ghz kf 982 NE34018-TI-64

    V64 SOT 23

    Abstract: 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018 NE34018-A marking V64 sot343
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz NE34018 25 4 Noise Figure, NF (dB)


    Original     		PDF OT-343) NE34018 NE34018 V64 SOT 23 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018-A marking V64 sot343

    6323 GA

    Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE


    Original     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 6323 GA transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor

    Untitled

    Abstract: No abstract text available
    Text: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF bbS3R31 Q02HS5U BCV64 BCV64B T-143 Q02USSb

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V63C64 H IG H PE R FO R M A N C E , L O W PO W ER 8 K x 8 B IT C M O S S TA T IC R A M Features Description • High speed • Maximum access times of 25, 30, 35, 45, and 55 ns ■ Equal access and cycle times ■ Fully static operation • No clock or refresh required


    OCR Scan     		PDF V63C64 V63C64 8192-word

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V63C64 H IG H PE R FO R M A N C E , L O W PO W ER 8 K x 8 B IT C M O S S T A T IC R A M Description Features • High speed The V 63C 64 is a high speed, low power, 8192-word • Maximum access times of 25, 3 0 ,3 5 , 45, and 55 ns by 8-bit C M O S static RAM fabricated using high


    OCR Scan     		PDF V63C64 8192-word

    HP5082-7760

    Abstract: hp 4514 opto led 7 segment anode TIL 702 HP 2231 opto coupler uaa170 UAA180 equivalent seven segment to BCD converter LM 7447 IC hp 5082 4204 pin photodiode cd40288 7448 bcd to seven segment decoder
    Text: ABOUT THE AUTHORS STAN GAGE has more than 10 years' experi­ ence in the design and application of optoelec­ tronic devices and the design and processing of linear integrated circuits. DAVE EVANS has developed various contrast enhancement technologies currently being


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated_ SYMBOL FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics


    OCR Scan     		PDF PHP8N50E, PHB8N50E, PHW8N50E PHP8N50E PHW8N50E

    40MAG

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD CO ;u HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 40MAG

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    NEC K 2500

    Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905

    IMSA-9637S-33Y902

    Abstract: IMSA-9637S SJ 2518 sharp TFT driver LQ075V3DG01 SM02 9637S IMSA-9637S-33Y
    Text: TECHNICAL No. L A 1-06026A DATE Sep 20 .2006 LITERATURE FOR TFT-LC D module V_J model no The L Q Q 7 5 V 3 D G 0 1 technical Please contact product based literature Sharp on this is or subject its to - change representative without before


    OCR Scan     		PDF LA1-06026A LQ075V3DG01 LAI-06026 LA1-06026A 1MSA-9637S-33Y902 BHR-02 IMSA-9637S-33Y902 IMSA-9637S SJ 2518 sharp TFT driver LQ075V3DG01 SM02 9637S IMSA-9637S-33Y