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    TRANSISTOR VCE 400V 500MA Search Results

    TRANSISTOR VCE 400V 500MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VCE 400V 500MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXTN08400BFF

    Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


    Original     		PDF ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F ZXTN08400BFF ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking

    TRANSISTOR MARKING 1d5

    Abstract: No abstract text available
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


    Original     		PDF ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F TRANSISTOR MARKING 1d5

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT658 Green 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • BVCEO > 400V IC = 500mA High Continuous Current ICM = 1A Peak Pulse Current Low Saturation Voltage VCE SAT < 250mV @ 50mA


    Original     		PDF FZT658 OT223 500mA 250mV 200mA J-STD-020 MIL-STD-202, FZT758

    Untitled

    Abstract: No abstract text available
    Text: DSS2515M 15V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD HBM SKV MM 400V Complementary PNP Type Available (DSS3515M)


    Original     		PDF DSS2515M DSS3515M) DFN1006-3 J-STD-020 MIL-STD-202, DFN1006-3 DS31816

    Untitled

    Abstract: No abstract text available
    Text: DSS2540M 40V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary PNP Type Available (DSS3540M)


    Original     		PDF DSS2540M DSS3540M) DFN1006-3 J-STD-020 MIL-STD-202, DFN1006-3 DS31820

    DSS2540M

    Abstract: DFN1006-3 DSS2540M-7 DSS2540M-7B DSS3540M pnp transistor 400V 500mA
    Text: DSS2540M 40V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary PNP Type Available (DSS3540M)


    Original     		PDF DSS2540M DSS3540M) DFN1006-3 J-STD-020 MIL-STD-202, DS31820 DSS2540M DFN1006-3 DSS2540M-7 DSS2540M-7B DSS3540M pnp transistor 400V 500mA

    DFN1006-3

    Abstract: No abstract text available
    Text: DSS3540M 40V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2540M)


    Original     		PDF DSS3540M DSS2540M) DFN1006-3 J-STD-020 MIL-STD-202, DFN1006-3 DS31821

    Untitled

    Abstract: No abstract text available
    Text: DSS3515M 15V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2515M)


    Original     		PDF DSS3515M DSS2515M) DFN1006-3 J-STD-020 MIL-STD-202, DFN1006-3 DS31819

    DFN1006-3

    Abstract: DSS2515M DSS3515M DSS3515M-7 DSS3515M-7B pnp transistor 400V 500mA
    Text: DSS3515M 15V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2515M)


    Original     		PDF DSS3515M DSS2515M) DFN1006-3 J-STD-020 MIL-STD-202, DS31819 DFN1006-3 DSS2515M DSS3515M DSS3515M-7 DSS3515M-7B pnp transistor 400V 500mA

    DFN1006-3

    Abstract: DSS2515M DSS2515M-7 DSS2515M-7B DSS3515M pnp transistor 400V 500mA
    Text: DSS2515M 15V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD HBM SKV MM 400V Complementary PNP Type Available (DSS3515M)


    Original     		PDF DSS2515M DSS3515M) DFN1006-3 J-STD-020 MIL-STD-202, DS31816 DFN1006-3 DSS2515M DSS2515M-7 DSS2515M-7B DSS3515M pnp transistor 400V 500mA

    Untitled

    Abstract: No abstract text available
    Text: DSS3515M 15V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2515M)


    Original     		PDF DSS3515M DSS2515M) DFN1006-3 J-STD-020 MIL-STD-202, DS31819

    Untitled

    Abstract: No abstract text available
    Text: DSS3540M 40V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2540M)


    Original     		PDF DSS3540M DSS2540M) DFN1006-3 J-STD-020 MIL-STD-202, DS31821

    DFN1006-3

    Abstract: DSS2540M DSS3540M DSS3540M-7 DSS3540M-7B pnp transistor 400V 500mA
    Text: DSS3540M 40V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2540M)


    Original     		PDF DSS3540M DSS2540M) DFN1006-3 J-STD-020 MIL-STD-202, DS31821 DFN1006-3 DSS2540M DSS3540M DSS3540M-7 DSS3540M-7B pnp transistor 400V 500mA

    Untitled

    Abstract: No abstract text available
    Text: DSS2515M 15V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD HBM SKV MM 400V Complementary PNP Type Available (DSS3515M)


    Original     		PDF DSS2515M DSS3515M) DFN1006-3 J-STD-020 MIL-STD-202, DS31816

    NPN Transistor 1A 400V to - 92

    Abstract: TSC873 TRANSISTOR 0835 transistor 600v. 1a. to 92 NPN Transistor 600V TSC873CT TSC873CW npn 600v to92 B12 IC marking code NPN TO92 400V
    Text: TSC873 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 1A VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ● 0.5V @ IC / IB = 500mA / 100mA


    Original     		PDF TSC873 OT-223 500mA 100mA TSC873CT TSC873CW NPN Transistor 1A 400V to - 92 TSC873 TRANSISTOR 0835 transistor 600v. 1a. to 92 NPN Transistor 600V npn 600v to92 B12 IC marking code NPN TO92 400V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1862D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A I C J D FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. K E Q : VCE sat =-0.5V(Max.) at (IC=0.5A) M B Low Collector Saturation Voltage.


    Original     		PDF KTA1862D/L -400V.

    C5 MARKING TRANSISTOR

    Abstract: TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor
    Text: TSC136L High Voltage NPN Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 2A VCE(SAT) Features 0.6V @ IC / IB = 1.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching


    Original     		PDF TSC136L O-251 O-252 TSC136LCP TSC136LCH 70pcs C5 MARKING TRANSISTOR TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor

    TRANSISTOR 0835

    Abstract: tsc873ct TSC873 transistor 600v. 1a. to 92
    Text: TSC873 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 1A VCE SAT Features ● ● Ordering Information High BVceo, BVcbo


    Original     		PDF TSC873 OT-223 500mA 100mA TSC873CT TSC873CW OT-223 TRANSISTOR 0835 TSC873 transistor 600v. 1a. to 92

    pnp transistor 400V 500mA

    Abstract: TRANSISTOR VCE 400V 500mA KTA1862D
    Text: SEMICONDUCTOR KTA1862D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A I C J D FEATURES High Breakdown Voltage, Typically : BVCEO=-400V. : tf= K O E Q : VCE sat =-0.5V(Max.) at (IC=0.5A) High Switching Speed, Typically


    Original     		PDF KTA1862D/L -400V. pnp transistor 400V 500mA TRANSISTOR VCE 400V 500mA KTA1862D

    transistor 13003d

    Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
    Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value


    Original     		PDF Jul-09 13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a

    Untitled

    Abstract: No abstract text available
    Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5667N1 O-276AA)

    Untitled

    Abstract: No abstract text available
    Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5667N1 O-276AA)

    400V switching transistor

    Abstract: npn darlington 400v 15a NPN Transistor 10A 400V NTE2315 Displays
    Text: NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast


    Original     		PDF NTE2315 NTE2315 400VC 500mA, 400V switching transistor npn darlington 400v 15a NPN Transistor 10A 400V Displays

    KSC2333

    Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
    Text: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I


    OCR Scan     		PDF KSC2073 KSA940 r-33-ctf O-220 KSC2333 NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2233 KSC2335 samsung tv YS 150 003 b