TRANSISTOR VCEO 1000V Search Results

BUW12A

Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
Contextual Info: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.

transistor VCE 1000V

Abstract: NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line

NPN Transistor VCEO 1000V

Abstract: 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line

BUY69

Abstract: BUY69A NPN Transistor VCEO 1000V
Contextual Info: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).

pnp transistor 1000v

Abstract: FZT758 FZT658 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6

npn 1000V 15A

Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in

NPN Transistor VCEO 1000V

Abstract: transistor 2sC3552 2SC3552
Contextual Info: Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf

BUT11AF

Abstract: transistor VCBO 1000V IC 100mA 11AF BUT11F
Contextual Info: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850

11AF

Abstract: BUT11AF BUT11F
Contextual Info: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850

transistor VCE 1000V to220

Contextual Info: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage

Contextual Info: , Dnc. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6754 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500(Min.) • High Switching Speed

11AF

Abstract: BUT11AF BUT11F
Contextual Info: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V

KSC5405

Contextual Info: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage

KSC5405

Contextual Info: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage

BUT11AF

Abstract: an7511 BUT11AFTU
Contextual Info: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V

Contextual Info: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage

2SC5686

Abstract: 2SC5686 equivalent
Contextual Info: Horizontal Deflection Output Transistor 2SC5686 • Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 2000 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V *3 Peak collector current ICP 30 A Collector current IC 20

KSC5405F

Contextual Info: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage

Contextual Info: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V

BUT11

Abstract: BUT-11
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

MJW16010A

Contextual Info: J , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA MJW16010A Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) Wide Area of Safe Operation

Contextual Info: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FM M T555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 B SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE

NPN 350W

Abstract: powertech NPN Transistor VCEO 1000V CO111
Contextual Info: "BIG IDEAS IN BIG POWER” PowerTech • 500 AMPERES L R -1 0 0 2 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-10Q2 SYMBOL Collector-Base Voltage VC 80 100V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage vebo 10V Peak Collector Current >CM*

BUT11A1

Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage