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    TRANSISTOR VCEO 1000V Search Results

    TRANSISTOR VCEO 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VCEO 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUW12A

    Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
    Text: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.


    Original     		PDF BUW12A BUW12A. BUW12A transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V

    transistor VCE 1000V

    Abstract: NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313PI transistor VCE 1000V NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31

    NPN Transistor VCEO 1000V

    Abstract: 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313 NPN Transistor VCEO 1000V 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V

    BUY69

    Abstract: BUY69A NPN Transistor VCEO 1000V
    Text: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).


    Original     		PDF BUY69A Voltage-100mA BUY69 BUY69A NPN Transistor VCEO 1000V

    pnp transistor 1000v

    Abstract: FZT758 FZT658 DSA003716
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6


    Original     		PDF OT223 FZT758 FZT658 -200mA, -20mA, 20MHz -100mA, -100V -20mA pnp transistor 1000v FZT758 FZT658 DSA003716

    npn 1000V 15A

    Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in


    Original     		PDF MJW16010A npn 1000V 15A NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V

    NPN Transistor VCEO 1000V

    Abstract: transistor 2sC3552 2SC3552
    Text: Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf


    Original     		PDF 2SC3552 MT-100 NPN Transistor VCEO 1000V transistor 2sC3552 2SC3552

    BUT11AF

    Abstract: transistor VCBO 1000V IC 100mA 11AF BUT11F
    Text: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF BUT11AF transistor VCBO 1000V IC 100mA 11AF BUT11F

    11AF

    Abstract: BUT11AF BUT11F
    Text: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF 11AF BUT11AF BUT11F

    transistor VCE 1000V to220

    Abstract: No abstract text available
    Text: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405 O-220 KSC5405TU O-220 transistor VCE 1000V to220

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6754 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500(Min.) • High Switching Speed


    Original     		PDF 2N6754

    11AF

    Abstract: BUT11AF BUT11F
    Text: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF 150ner 11AF BUT11AF BUT11F

    KSC5405

    Abstract: No abstract text available
    Text: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405 O-220 KSC5405

    KSC5405

    Abstract: No abstract text available
    Text: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405 O-220 KSC5405

    BUT11AF

    Abstract: an7511 BUT11AFTU
    Text: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF BUT11AFTU O-220F an7511

    Untitled

    Abstract: No abstract text available
    Text: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405F O-220F KSC5405FTU O-220F

    2SC5686

    Abstract: 2SC5686 equivalent
    Text: Horizontal Deflection Output Transistor 2SC5686 • Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 2000 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V *3 Peak collector current ICP 30 A Collector current IC 20


    Original     		PDF 2SC5686 2SC5686 2SC5686 equivalent

    KSC5405F

    Abstract: No abstract text available
    Text: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405F O-220F KSC5405F

    Untitled

    Abstract: No abstract text available
    Text: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF

    BUT11

    Abstract: BUT-11
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage


    Original     		PDF BUT11/11A O-220 BUT11 BUT11A BUT11 BUT-11

    MJW16010A

    Abstract: No abstract text available
    Text: J , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA MJW16010A Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) Wide Area of Safe Operation


    Original     		PDF MJW16010A T100r MJW16010A

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FM M T555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 B SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE


    Original     		PDF FMMT455 100ms

    BUT11A1

    Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage


    Original     		PDF BUT11/11A O-220 BUT11 BUT11A BUT11A1 BUT-11 BUT11A CIRCUIT BUT11 BUT11A

    NPN 350W

    Abstract: powertech NPN Transistor VCEO 1000V CO111
    Text: "BIG IDEAS IN BIG POWER” PowerTech • 500 AMPERES L R -1 0 0 2 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-10Q2 SYMBOL Collector-Base Voltage VC 80 100V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage vebo 10V Peak Collector Current >CM*


    OCR Scan     		PDF LR-10Q2 -650C LPH-150 SYMBOL500 200ma NPN 350W powertech NPN Transistor VCEO 1000V CO111