TRANSISTOR VDS RDS 12 ID 80A TO220 Search Results

transistor vds rds 12 id 80a to220

Abstract: BUZ 80A A1309 BUZ 840 C67078-A1309-A3
Contextual Info: BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80A 800 V 3A 3Ω TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

SEM 2006

Abstract: P0808ATG transistor vds rds 12 id 80a to220
Contextual Info: P0808ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 8mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

65C7045

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab

kf80n08

Abstract: KF80N08P kf80n08f 701p2
Contextual Info: SEMICONDUCTOR KF80N08P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF80N08P A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

CEP80N75

Abstract: transistor vds rds 12 id 80a to220 ceb80n75 CEF80N75 CEI80N75
Contextual Info: CEP80N75/CEB80N75 CEI80N75/CEF80N75 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A 10V CEI80N75 75V 13mΩ 80A 10V CEF80N75 75V 13mΩ 80A e 10V D Super high dense cell design for extremely low RDS(ON).

KMB080N75PA

Abstract: schottky diode 60V 80A 080N75P D 92 M - 02 DIODE isd 4020 080n7
Contextual Info: SEMICONDUCTOR KMB080N75PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

Contextual Info: SEMICONDUCTOR KMB080N75PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

p8444

Abstract: transistor vds rds 12 id 80a to220
Contextual Info: STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 40V 80A 4.8 @ VGS=10V Rugged and reliable. TO-220 and TO-263 Package.

Contextual Info: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values

STB80NF55L-08-1

Contextual Info: STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 55 V 55 V 55 V 0.008Ω 0.008Ω 0.008Ω 80 A

p80nf06

Abstract: JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 P80NF
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A 3 1 STW80NF06 60V • 100% avalanche tested ■ Low threshold drive

JESD97

Abstract: STD95N04 STP95N04
Contextual Info: STP95N04 STD95N04 N-CHANNEL 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N04 STP95N04 40V 40V <6.5mΩ <6.5mΩ 80A 80A 110W 110W 3 • 1 STANDARD THRESHOLD DRIVE 3 1 ■ 100% AVALANCHE TESTED DPAK

b80pf55

Abstract: p80pf55 STP80PF55 P80PF B80PF MOSFET MARKING ST st 393 st mosfet STB80PF55 JESD97
Contextual Info: STB80PF55 STP80PF55 P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP80PF55 55V <0.018Ω 80A STB80PF55 55V <0.018Ω 80A • Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

STB80NF55L-08-1

Contextual Info: STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 55 V 55 V 55 V 0.008Ω 0.008Ω 0.008Ω 80 A

STB80NF55L-08-1

Abstract: STP80NF55L-08 STB80NF55L-08
Contextual Info: STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 55 V 55 V 55 V 0.008Ω 0.008Ω 0.008Ω 80 A

Contextual Info: STP80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065Ω - 80A TO-220/I2PAK STripFET POWER MOSFET • TYPE VDSS RDS on ID STP80NF55-08 STB80NF55-08-1 55 V 55 V <0.008Ω <0.008Ω 80 A 80 A TYPICAL RDS(on) = 0.0065Ω 3 12 3 1 DESCRIPTION This Power Mosfet is the latest development of

Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF06 60V <0.010Ω 80A STP80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V • Exceptional dv/dt capability

D-PAK

Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
Contextual Info: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W

P80NF06

Abstract: P80NF JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF06 60V <0.010Ω 80A STP80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V • Exceptional dv/dt capability

95n4f

Abstract: STP95N4F3 95n4f3 STD95N4F3 JESD97 STU95N4F3
Contextual Info: STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive

SEM 2006

Abstract: P1308ATG transistor sem 2006
Contextual Info: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

p140nf55

Abstract: STP140NF55 p140n B140NF55 JESD97 STB140NF55 STB140NF55-1 p140nf
Contextual Info: STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID (1) STB140NF55 55V <0.008Ω 80A STB140NF55-1 55V <0.008Ω 80A STP140NF55 55V <0.008Ω 80A 3 1. Current limited by package

95n4f

Abstract: STD95N4F3 95n4f3 JESD97 STP95N4F3 STU95N4F3
Contextual Info: STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive

p140nf55

Abstract: STP140NF55 p140nf STB140NF55 STB140NF55T4
Contextual Info: STB140NF55 STP140NF55 N-CHANNEL 55V - 0.0065 Ω - 80A TO-220/D²PAK STripFET II POWER MOSFET Table 1: General Features • Figure 1:Package TYPE VDSS RDS on ID STB140NF55 STP140NF55 55 V 55 V < 0.008 Ω < 0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0065 Ω