TRANSISTOR W 59 Search Results

TRANSISTOR W 59 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR W 59 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the	Original	CMPT591E CMPT591E OT-23 CMPT491E 500mA 100MHz 27-January	PDF
igbt module bsm 200 Abstract: GB60 igbt module bsm 300 eupec igbt BSM 100 gb Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,17 K/W - - 0,29 K/W Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC	Original		PDF
CMPT491E Abstract: CMPT591E Contextual Info: CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the	Original	CMPT591E OT-23 CMPT591E CMPT491E 500mA 100MHz 27-January CMPT491E	PDF
transistor b722 Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034 Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan		PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
BLW84 Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6 Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith	OCR Scan	bbS3S31 BLW84 59-j54 OT-123. 7Z77529 7Z77S30 BLW84 transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 agere c8 Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386 Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386	PDF
AGR19180EF Abstract: JESD22-A114 Z111A Contextual Info: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19180EF Hz--1990 AGR19180EF JESD22-A114 Z111A	PDF
J307 FET Abstract: J307 transistor c35 equivalent IM335 Contextual Info: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180E Hz--1990 AGR19180EU AGR19180EF Voltag48, DS02-377RFPP J307 FET J307 transistor c35 equivalent IM335	PDF
MPS6560 Abstract: audio transistor Contextual Info: SAMSUNG SEMICONDUCTOR INC D MPS6560 J 7Tbm4£ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR AUDIO TRANSISTOR • Collector-Emitter Voltage: V CEo = 2 5 V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM J W IN G S (Ta=25°C) Characteristic Collector-Base Vbltage	OCR Scan	MPS6560 625mW T-29-21 100piA, 100mA, 500mA, 30MHz 100KHz audio transistor	PDF
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent	Original	BLF642	PDF
C570X7R1H106KT000N Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent	Original	BLF642 771-BLF642112 BLF642 C570X7R1H106KT000N SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 C570x	PDF

GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
2SC4867 Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE Contextual Info: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in	OCR Scan	ENN6117 FH201 2SC4871) 2SC4867) FH20I 2SC4871 2SC4867, FH201] 7117D7L 0D544b7 2SC4867 16T MARKING FH201 ZS21 TA-1315 1hz OUTPUT 7CJE	PDF
AT415 Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga	OCR Scan	AT-41511, T-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT415	PDF
transistor smd 1FT Abstract: AT12L Contextual Info: W h a lH E W L E T T $ mLKM PACKARD Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X ‘ See matrix for available extensions. Features	OCR Scan	HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135D MIL-PRF-38534. 5964-3910E transistor smd 1FT AT12L	PDF
transistor c36 Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134 Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH3134-11s MJLLIMET1344) transistor c36 wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134	PDF
transistor D 5032 Abstract: 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246 Contextual Info: bbS 3 q 31 Philips Semiconductors ODEMflga 335 W A P X Product specification NPN 4 GHz wideband transistor M ANER DESCRIPTION ^ PHILIPS/DISCRETE L7E BFG35 D _ PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. Intended for wideband	OCR Scan	bbS3q31 BFG35 OT223 BFG55. 500MHz transistor D 5032 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246	PDF
5C transistor Abstract: transistor 5c 5C-32 nato 5C-23 5C-24 5C-33 1MAA00237AAP 30CW C32C Contextual Info: Obtflobs. 5C Series Chassis Mounted T05 .W1^6 v w w w VW VW A range of finned heatsinks with hollow clamp screw to trap the transistor flange against dissipation seating. e = 30°C/W Body finish: Black anodised. Type Clamp Screw 5C 5C-20 Plastic Metal 5C-23	OCR Scan	5C-23 5C-24 5C-32 5C-33 1MAA00237AAP 5C transistor transistor 5c nato 1MAA00237AAP 30CW C32C	PDF
C459 Abstract: 2N1613 1613 14 AMB-45 Contextual Info: Nicht für Neuentwicklungen Not for new developm ents 2 N 1613 'W Silizium-NPN-Planar-Transistor Silicon NPN Planar Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches Besondere Merkmale: • Hohe Sperrspannung	OCR Scan		PDF
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	BLF6G15L-40BRN	PDF
C5750X7R1H106M Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751 Contextual Info: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20LS-75 ACPR400k ACPR600k BLF6G20LS-75 C5750X7R1H106M C3225X7R1H155M RF35 SM270 TRANSISTOR 751	PDF

TRANSISTOR W 59 Search Results

TRANSISTOR W 59 Result Highlights (5)

TRANSISTOR W 59 Datasheets Context Search

igbt module bsm 200

CMPT491E

transistor b722

equivalent transistor TT 3034

RCA H 541

BLW84

J307 FET

J307 FET

AGR19180EF

J307 FET

MPS6560

C570X7R1H106KT000N

GT45F122

2SC4867

AT415

transistor smd 1FT

transistor c36

transistor D 5032

5C transistor

C459

C5750X7R1H106M