TRANSISTOR X 313 Search Results

BFG134

Abstract: BJE 247
Contextual Info: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bbS3^31 Q03D70S 77fl W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Contextual Info: N AUER PHILIPS/MSCRETE b^E » • bbS 3131 0 0 2 ^ 1 1 0 'lb? « A P X BLV90 _ J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

philips bfq

Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a

2N3137

Abstract: pbgi 2n 3137 CE020
Contextual Info: 2N 3137 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M . PLAN A R E P IT A X IA L Class-CVH F Power amplifier to 250 MHz A m plifica te u r de puissance VHF en classe - C jusquà 250 MHz v CEO 20 V fT 500 MHz min '’ out 400 mW min.

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

BUK444-500B

Abstract: transistor npc 231 d0305 transistor BUK444-500B Q03DS3 PINNING-SOT186
Contextual Info: AUER P HI LIPS/DISCRETE b'iE » bbSB'îBl D 0 3 G 535 b 43 • A P X Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

2SC2498

Contextual Info: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION MAXIMUM RATINGS Ta = 4.7 M A X . , 5.1 M A X 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

transistor vc 548

Abstract: transistor C 548 B Philips
Contextual Info: bbSBTBl DDSMflDT Tb5 « A P X P hilips Sem iconductors NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES Product specification b7E J> PINNING PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability.

sem 2106

Abstract: bux13
Contextual Info: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.

BFR134

Contextual Info: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37

W1p TRANSISTOR

Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Contextual Info: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF

Contextual Info: I Ordering number : EN ¡K4916 ¡ CMOS LSI LC35256A, AS, AM-70/85/10 256K 32768 words x 8 bits^SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM aie 32768 words x 8-bils asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CM OS memory c e ll, low

MGF4714AP

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714AP low-noiseHEMT High Electron Mobili­ ty Transistor is designed for use in X band amplifiers. The plastic mold package offer high cost performance,

M38527

Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Contextual Info: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)

2SJ153

Contextual Info: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,

Contextual Info: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,

2SB1291

Abstract: 2SD1720
Contextual Info: 2SB1291 h "7 > v 7s $ /T ra n s is to rs X tf 2SB1291 PNP > V =l > S ? > y X 2 Epitaxial Planar PNP Silicon Transistor fiJi;& li^ i# fii# i/ L o w Freq. Power Amp. ^•Jfí'+iíISl/Dimensions Unit: mm 1) VcE(sat) A 'lf t l'o V c E (s a t|= —0.3V (Typ.)

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.