TRANSISTOR Z4 51 Search Results

TRANSISTOR Z4 51 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR Z4 51 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor z3 Abstract: TRANSISTOR Z4 Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor z3 TRANSISTOR Z4	PDF
TRANSISTOR Z4 Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470 Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 IRF 1470	PDF
transistor C4 Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4	PDF
vk-200 ferrite choke Abstract: MRF641 transistor z4 n Allen-Bradley schematic transistor z5 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —	OCR Scan	16-Volt MRF641 vk-200 ferrite choke transistor z4 n Allen-Bradley schematic transistor z5	PDF
transistor z5 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics	OCR Scan	MRF653 MRF653 transistor z5	PDF
MRF644 Abstract: MOTOROLA 381 equivalent NPN TRANSISTOR Z4 TRANSISTOR J214 Contextual Info: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	MRF644/D MRF644 MRF644 MRF644/D* MRF644/D MOTOROLA 381 equivalent NPN TRANSISTOR Z4 TRANSISTOR J214	PDF
transistor z9 Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package	Original	RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF	PDF
MRF644 Abstract: TRANSISTOR Z4 VK200 MOTOROLA 381 equivalent Contextual Info: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	MRF644/D MRF644 MRF644/D* MRF644 TRANSISTOR Z4 VK200 MOTOROLA 381 equivalent	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Voll UHF large-signal am plifier applications in industrial and com mercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —	OCR Scan	MRF641	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —	OCR Scan	16-Volt MRF641	PDF
MRF653 Abstract: MRF653 circuit test Contextual Info: MOTOROLA Order this document by MRF653/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics	Original	MRF653/D MRF653 MRF653 MRF653 circuit test	PDF
MRF641 Abstract: 104B Contextual Info: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	MRF641/D MRF641 MRF641/D* MRF641 104B	PDF
case 244-04 Abstract: z3c8 Contextual Info: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA MRF652 Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics	Original	MRF652/D MRF652 MRF652 MRF652/D MRF652/D* case 244-04 z3c8	PDF
mrf641 Abstract: 1117 ADC Contextual Info: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	MRF641/D MRF641 mrf641 1117 ADC	PDF

mrf338 data sheet Abstract: MRF338 VK200 Contextual Info: MOTOROLA Order this document by MRF338/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics	Original	MRF338/D MRF338 mrf338 data sheet MRF338 VK200	PDF
Contextual Info: MOTOROLA Order this document by MRF338/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics	Original	MRF338/D MRF338 MRF338 MRF338/D	PDF
CRITCHLEY 9003 Abstract: siemens CNY17-2 TE 2161 CRITCHLEY 9004 BS6317 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers Contextual Info: ICs for Communications Analog Line Interface with the ARCOFI -BA PSB 2161 Application Note 06.96 PSB 2161 Revision History: Current Version: 06.96 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)	Original	BS6305; BS6317 B11-11 CRITCHLEY 9003 siemens CNY17-2 TE 2161 CRITCHLEY 9004 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers	PDF
MRF282 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--1 MRF282SR1 MRF282--1 MRF282	PDF
Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	MMRF1021N MMRF1021NT1	PDF
imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL	PDF
100B270JCA500X Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282	PDF
microstrip Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	Original	MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS	PDF
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282	PDF
Contextual Info: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz	Original	RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000,	PDF

TRANSISTOR Z4 51 Search Results

TRANSISTOR Z4 51 Result Highlights (5)

TRANSISTOR Z4 51 Datasheets Context Search

transistor z3

TRANSISTOR Z4

transistor C4

vk-200 ferrite choke

transistor z5

MRF644

transistor z9

MRF644

MRF653

MRF641

case 244-04

mrf641

mrf338 data sheet

CRITCHLEY 9003

MRF282

imd 5210

100B270JCA500X

microstrip

100B201JT500XT