TRANSISTOR Z4 J Search Results

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

Contextual Info: BLF6G21-10 Power LDMOS transistor Rev. 01 — 6 July 2009 Objective data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.

MGU487

Abstract: 200B BLA1011-2 NV SMD TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Jun 17 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain

MCE021

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 02 2002 Sep 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 PINNING - SOT538A FEATURES • Easy power control

transistor C456

Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
Contextual Info: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and

2907A PNP bipolar transistors

Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1
Contextual Info: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular

AT-41511

Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411
Contextual Info: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular

TPIC5424L

Contextual Info: TPIC5424L H-BRIDGE LOGIC-LEVEL POWER DMOS ARRAY SLIS026A – JUNE 1994 – REVISED SEPTEMBER 1994 • • • • • Low rDS on . . . 0.4 Ω Typ High-Voltage Output . . . 60 V Pulsed Current . . . 3 A Per Channel Fast Commutation Speed Direct Logic-Level Interface

Contextual Info: /= T * 7 J S G S -1 H 0 M S 0 N . M » l l L i g T O ( M [ ] S _S D 1 5 3 8 - 0 2 RF & MICROWAVE TRANSISTO R S AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 200 WATTS (typ. IFF 1030 - 1090 MHz

KSD5072

Contextual Info: , Line. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5072 B DESCRIPTION • High Breakdown Voltage: VCBO= 1500V (Min) • High Switching Speed • High Reliability

J555

Contextual Info: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

MRF393

Contextual Info: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier

TRANSISTOR Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

J307 FET

Abstract: J307 transistor c35 equivalent IM335
Contextual Info: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

TRANSISTOR Z4

Abstract: Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces
Contextual Info: 0912-45 45 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-45 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

Transistor J182

Contextual Info: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

transistor z5

Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
Contextual Info: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

T491C

Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235
Contextual Info: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

MRF321

Abstract: ferroxcube 56-590-65
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.

J600 transistor

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

pwmtov

Contextual Info: ¿ * = 7 S G /. M 7 S - T H O M S O » i L I § T [ j » D N SD1540 g I RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS • 350 WATTS (typ. IFF 1030 ■ 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz

z3 transistor

Abstract: TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3
Contextual Info: 0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable