TRANSISTOR Z6 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

Contextual Info: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe

Motorola 680

Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

Motorola transistor 358

Abstract: Case 449-02
Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

Contextual Info: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT

transistor smd z9

Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206
Contextual Info: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

transistor smd z9

Abstract: Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco AGR18045E JESD22-C101A 600F8R2CT250
Contextual Info: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

"RF Power Transistor"

Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

100B100JW500X

Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line Gallium Arsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT Designed for use in low voltage, moderate power amplifiers such as portable

Z25 transistor

Abstract: Z27 transistor
Contextual Info: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.

Contextual Info: T O SH IB A TLP630 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP630 PROGRAMMABLE CONTROLLERS U nit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

motorola 269-5

Abstract: z627
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 1 0 25-1 150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 150 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR

vk200 ferrite bead

Abstract: power transistor gaas transistor 9822 Case 449-02
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium Arsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT Designed for use in low voltage, moderate power amplifiers such as portable

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

GRM55DR61H106KA88B

Contextual Info: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.