TRANSISTOR Z9 Search Results

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

CBVK741B019

Abstract: F63TNR FDD603AL FDD6680
Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This

transistor smd z9

Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206
Contextual Info: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

transistor smd z9

Abstract: Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco AGR18045E JESD22-C101A 600F8R2CT250
Contextual Info: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

"RF Power Transistor"

Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

XC9128

Abstract: XC9129 LTF5022T-4R7N2R0 XC9128B45 MSOP10-1 200PWM
Contextual Info: XC9128/XC9129 Series ETR0411-010a 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2 TYP. N-channel driver transistor and a

Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Step-Up

Contextual Info: XC9128/XC9129 Series ETR0411-011 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a

LTF5022-4R7-LC

Abstract: XC9128B45 ltf5022 LTF5022-LC AEN 6 XC9128 CDRH4D28C-4R7N LTF5022T-4R7N2R0 LMK212BJ106KG MSOP-10
Contextual Info: XC9128/XC9129 Series ETR0411-009 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

J293

Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
Contextual Info: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor

ltf5022

Abstract: LTF5022-4R7-LC AEN 6 LMK212BJ106KG xc9128 MSOP-10 USP-10B XC9129 XBS30 MSOP10-1
Contextual Info: XC9128/XC9129 Series ETR0411-010 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a

100B100JW500X

Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Z25 transistor

Abstract: Z27 transistor
Contextual Info: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.

motorola 269-5

Abstract: z627
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 1 0 25-1 150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 150 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR

Step-Up

Abstract: XC9131
Contextual Info: XC9131 Series ETR0412-010 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9131 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2Ω(TYP.)

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

XC9136E50CDR-G

Abstract: XC9136N 4606 IC circuit diagram JMK212ABJ106KG marking CDF 2065V XC9135M JMK212ABJ106 XC9136E
Contextual Info: XC9135/XC9136 Series ETR0416-001b 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9135/XC9136 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2

XC9131F05

Abstract: LTF5022-LC XC9131F LMK212BJ-106KG XC9131 4020-2R VLS252012 XC9131H05C vlcf4020 LMK212BJ106KG
Contextual Info: XC9131 Series ETR0412-008 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9131 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2Ω(TYP.)

XC9135

Abstract: XC9136
Contextual Info: XC9135/XC9136 Series ETR0416-001a 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9135/XC9136 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

GRM55DR61H106KA88B

Contextual Info: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.

BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Contextual Info: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics