TRANSISTOR ZS 35 Search Results

Contextual Info: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings

Contextual Info: SIEMENS BCR 142 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, diver circuit >Built in bias resistor R i= 22kiî, R 2=47ki! TT n r Pin Configuration B C R 142 W Zs 1 =B II CO Q62702-C2259 Package o Marking Ordering Code

WF VQE 22 c

Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
Contextual Info: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E

7415 ic pin details

Abstract: C10535E NE52118 NE52118-T1
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

C10535E

Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω

transistor D 2394

Abstract: 2SD2576
Contextual Info: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.

RCA-CA3086

Abstract: RCA CA3086 CA3086 RCA-CA3018 ICAN-5296 "rca application note" CA3086F I426 HTU8 CA3086 APPLICATION NOTE
Contextual Info: G E SOLID STATE DI m r ia y o • ■- D E | 3075001 D014t.l0 5 | ■ - - - - CA3086 — — —'■ ■■■— 'T'-H'S-ZS General-Purpose N-P-N Transistor Array T h re e Isolated T ran sisto rs and O ne D iffe re n tia lly C onnected T ran sisto r Pair

Contextual Info: N E C ELECTRONICS INC Tñ DeJ t.*4S?S2S OOITIBT 3 'T^m*iS,' ZS /¿ P A I 4 3 6 H PNP SILICON LOW DESCRIPTION E P I T A X I A L . . P OWER TRANSISTOR . ARRAY SPEED' SWITCHING DARLINGTON > The ¡i PA1436H is an array of four dariington power tra n sisto rs. I t is

THJU401

Abstract: THJJ300B
Contextual Info: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss

Contextual Info: 3GE P • 7^537 Q031SQ3 0 ■ 'T'-'ZS- 1 S C S -T H O M S O N ^ r a @ i p O T o ) 3D(gi 2 N 4014 S G S-THOMSON HIGH-VOLTAGE, HIGH CURRENT SWITCH DESC RIPTIO N The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current

Contextual Info: _8 3 6 8 6 0 2 S O L I T R Q N D E V I C E S SOLITRON DEVICES INC _ 95 D 02821 D T-JT-ZS' ~T5 » e | fl3t,flbD5 DGGaaai fl I NC E > fô @ E Q j) g F VER Y HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER D e v ic e s - ln c - N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR*

Contextual Info: A L LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 0 S 0 M 3 3 Ô 0 0 0 3 S Ö 2 5 ■ AL 6R 93 D 0 3 5 8 2 'b'T-Z.^ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C

NPN pnp MATCHED PAIRS array

Abstract: LA 4451
Contextual Info: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors [ /Title HFA3 134, HFA31 35 /Subject (Ultra High Frequency Matche d Pair Transistors) /Autho r () /Keywords (Intersil Corporation, semiconductor, two, transistor array,

j358

Contextual Info: T1G4003532-FS 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

transistor BC 945

Abstract: BC 945 transistor sga-9189
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3500 MHz. With optimal matching at 2 GHz, TOI=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium

vishay rf output power transistor

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
Contextual Info: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

2gma

Abstract: Q62702-F938 121-996
Contextual Info: BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: BFR 35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP

1090mhz

Abstract: JESD22-A114 PRA1000
Contextual Info: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit

Contextual Info: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: BFR 35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features