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    TRANSISTORS C102 Search Results

    TRANSISTORS C102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS C102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C102

    Abstract: C101 2SC4043S 2SC4083 2SC4725 2SC4726 2SC3837K 2SC3838K 2SC4082 2SC4043
    Text: Transistors 2SC4725 / 2SC4082 / 2SC3837K 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S 94S-227-C101 (96-165-C102) 303


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    PDF 2SC4725 2SC4082 2SC3837K 2SC4726 2SC4083 2SC3838K 2SC4043S 94S-227-C101) 96-165-C102) C102 C101 2SC4043S 2SC3837K 2SC4043

    UMW8N

    Abstract: UMW7 FMW8 C101 UMW6N FMW10 UMW10N C102
    Text: Transistors UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 94S-404-C101 (94S-407-C102) 596


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    PDF UMW10N FMW10 94S-404-C101) 94S-407-C102) UMW8N UMW7 FMW8 C101 UMW6N C102

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


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    PDF 2SA1037AK SC-88A -50/iA -50pA --12V, AC221 2SC1412 VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


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    PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


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    PDF PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170

    Untitled

    Abstract: No abstract text available
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


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    PDF AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S

    Rogers 3006

    Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 — 4 January 2011 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


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    PDF AN10944 BLF7G20LS-200 BLF7G20LS-200 Rogers 3006 transistor c118 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109

    diac d83

    Abstract: TELEVISION EHT TRANSFORMERS Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips IC HEF 4538 TDA3654 equivalent at2090/01 D63 diac varistor 10E 431 automatic voltage stabilizer circuit diagram lm324
    Text: Televisions and Monitors Power Semiconductor Applications Philips Semiconductors CHAPTER 4 Televisions and Monitors 4.1 Power Devices in TV Applications including selection guides 4.2 Deflection Circuit Examples 4.3 SMPS Circuit Examples 4.4 Monitor Deflection and SMPS Example


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    npn TRANSISTOR c105

    Abstract: TRANSISTOR c105 c105 TRANSISTOR ku vsat "buffer amplifier" SC-551-42 c105 regenerative braking c103 m TRANSISTOR TRANSISTOR C107 HA13609ANT
    Text: HA13609ANT Three-Phase Brushless Motor Driver ADE-207-232 Z 1st. Edition May 1997 Description The HA13609ANT is a 3-phase brushless motor driver IC with digital speed control. It is designed for use as a PPC or LBP scanner motor driver and provides the functions and features listed below.


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    PDF HA13609ANT ADE-207-232 HA13609ANT 16-bit npn TRANSISTOR c105 TRANSISTOR c105 c105 TRANSISTOR ku vsat "buffer amplifier" SC-551-42 c105 regenerative braking c103 m TRANSISTOR TRANSISTOR C107

    npn TRANSISTOR c105

    Abstract: 3PHA 20 TRANSISTOR c105 HA13609ANT phenom 2 955 diagram c105 TRANSISTOR Transistor No C110 3PHA PNP power transistors by hitachi Hitachi DSA00279
    Text: HA13609ANT Three-Phase Brushless Motor Driver ADE-207-232 Z 1st. Edition May 1997 Description The HA13609A NT is a 3-pha se brushless motor drive r IC with digita l spee d contr ol. It is designe d for use as a PPC or LBP scanner motor driver and provides the functions and features listed below.


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    PDF HA13609ANT ADE-207-232 HA13609A 16-bit D-85622 npn TRANSISTOR c105 3PHA 20 TRANSISTOR c105 HA13609ANT phenom 2 955 diagram c105 TRANSISTOR Transistor No C110 3PHA PNP power transistors by hitachi Hitachi DSA00279

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN 2012-04 V1.0 May 2012 AN2012-04 MA3L120E07_EVAL Evaluation Adapter Board for EconoPACKTM 4 3-Level Modules in NPC2-Topology Evaluation Adapter Board for EconoPACKTM 4 3-Level NPC2 Modules Application Note AN 2012-04 V1.0 May 2012 Edition 2011-05-15


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    PDF AN2012-04 MA3L120E07 SP000979670 F3L2020E07-F-P SP001000644 AN2012-03 1ED020I12-F

    philco transistors

    Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
    Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.


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    PDF 2N252 2N309 2N140 521-6T2 528-6T2 002DIA SR200 SR500 philco transistors DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    TRANSISTOR BC 157

    Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
    Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


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    PDF T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    c103 TRANSISTOR equivalent

    Abstract: TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105
    Text: 1 Introduction Increasingly power supplies used in applications such as home appliance, office automation,communications and industrial area need to operate on the main AC line 100V and 200V as products are manufactured for global markets. Traditionally power supplies have been designed to operate on either 100V


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    PDF 200VAC 2606C 95-220V 200uA c103 TRANSISTOR equivalent TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    C1027

    Abstract: transistor c1027 c1027 transistor transistor c1026 C1026 transistor c1027 same C-1027 transistor c1026 input output voltage c1026 transistor IRGPH50K
    Text: International IMI Rectifier PD - 9.1126A IRGPH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ps @ 125°C, Vge = 10V Vces = 1200V 5 p s @ V GE = 1 5 V • Switching-loss rating includes all "tail" losses


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    PDF IRGPH50K C-1027 1000C O-247AC C-1028 C1027 transistor c1027 c1027 transistor transistor c1026 C1026 transistor c1027 same transistor c1026 input output voltage c1026 transistor

    C1027

    Abstract: transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor
    Text: PD-9.1126A bitemational i ?]Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 1 0 js @ 125°C, V qe = 10V (5ps ® Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency (over 5kHz)


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    PDF IRGPH50K C-1027 100CK O-247AC C-1028 C1027 transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor

    transistor c1026

    Abstract: transistor c1027 C1027 c1027 transistor c1026 c1023 transistor transistor C1023 transistor c1027 same c1026 transistor C1024
    Text: International Eg?g]Rectifier PD-9.1126A IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - "lOps @ 125°C, V ge = 10V 5ps @ VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz)


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    PDF IRGPH50K O-247AC C-1028 transistor c1026 transistor c1027 C1027 c1027 transistor c1026 c1023 transistor transistor C1023 transistor c1027 same c1026 transistor C1024

    C1027

    Abstract: c1027 transistor transistor c1027 transistor c1026 C1026 C-1027 c1026 transistor transistor c1026 input output voltage IRGPH50K c1028 transistor
    Text: PD-9.1126A International »«Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features c • Short circuit rated - lOps @ 125°C, V ge = 10V 5ps @ VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz)


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    PDF IRGPH50K 1000C 12-Turn-Off O-247AC C-1028 C1027 c1027 transistor transistor c1027 transistor c1026 C1026 C-1027 c1026 transistor transistor c1026 input output voltage IRGPH50K c1028 transistor

    sgsp365

    Abstract: sp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566
    Text: S 6 S-THOHSON 0 7 E ' •• : - , SGSP364/P365/P366 SGSP464/P465/P466 ; . SG SP 56 4 /P 56 5 /P 5 6 6 73C D | 17395 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V ds •d l m • Ptot Tstg Tj (•) Pulse w idth lim ited b y safe operating area


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    PDF SGSP364/P365/P366 SGSP464/P465/P466 50V/400V SGSP366 SP364 SP365 SP464 SP465 SP564 SP565 sgsp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566