TRANSISTORS SEC 537 Search Results

Contextual Info: I . I» I Provisional Data Sheet No. PD 9 .1 292B International l R Rectifier HEXFET PO W ER M O S FE T IRFY440CM N-CHANNEL Product Summary 500 Volt, 0.85Î2 H E X F E T HEXFET technology is the key to International Rectifier’s advanced line of power M O SFET transistors. The effi­

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350

TRANSISTORS sec 537

Contextual Info: PD-91292D POWER MOSFET THRU-HOLE TO-257AA IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY440C 0.85 Ω 7.0A Ceramic IRFY440CM 0.85 Ω 7.0A Ceramic HEXFET® MOSFET technology is the key to International

TO-257AA

Abstract: IRFY440C IRFY440CM
Contextual Info: PD-91292D POWER MOSFET THRU-HOLE TO-257AA IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY440C 0.85 Ω 7.0A Ceramic IRFY440CM 0.85 Ω 7.0A Ceramic HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 94197B POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

IRF P CHANNEL MOSFET 10A 100V

Abstract: SEC IRF 640 IRFY9140 IRFY9140C IRFY9140CM IRFY9140M
Contextual Info: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

TRANSISTORS sec 537

Contextual Info: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

Contextual Info: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

I1092

Contextual Info: Provisional Data Sheet No. PO 9.1287B International I G R Rectifier HEXFET PO W E R M O S F E T IRFY140CM N -C H A N N E L Product Summary 100 Volt, 0.077Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

Contextual Info: Provisional Data Sheet No. PD 9.1290B International ICR Rectifier HEXFET PO W ER M O S FE T IRFY340CM N-CHANNEL Product Summary 400 Volt, 0.55Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

I1092

Contextual Info: Provisional Data Sheet No. PD 9.1289B International IOR Rectifier HEXFET PO W E R M O S F E T IR FY240C M N-CHANNEL Product Summary 200Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors. The effi­

16 pin ic sg3524

Abstract: SG3524 inverter ic 3524 application IC SG3524N LC 3524 mode of operation 16 pin ic sg3524 SGS SG2524 push pull inverters circuit diagram sg3524 converter pwm oscillator ic 3524
Contextual Info: S G S -1 H 0 M S 0 N ^ 7 # . R^D g[Hj(5 l^il(gir^(ô)^0(gl SG 2524 SG 3524 REGULATING PULSE WIDTH MODULATORS • COMPLETE PWM POWER CONTROL CIR­ CUITRY ■ UNCOM MITTED OUTPUTS FOR SINGLE­ ENDED OR PUSH PULL APPLICATIONS - LOW STANDBY CURRENT 8mA TYPICAL

500mA H-bridge

Abstract: CS-3710M15
Contextual Info: CS-3710 0.5A Fully Protected Dual H-Bridge Driver D escription The CS-3710 is a smart dual 0.5A Hbridge driver u sed in microprocessor controlled stepper motor system s. The CS-3710 provides bidirectional current using tw o independent 0.5A H -bridge drivers. On chip com m utation diod es

q 1363

Contextual Info: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International

Contextual Info: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91289D POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number ID Eyelets IRFY240C RDS(on) 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic HEXFET® MOSFET technology is the key to International

NEC B536

Abstract: 2SD382 2SB536 NEC 2sD381 b536 2SB537 B-536 nec b 537 2SB536 b537
Contextual Info: NEC SILICON POWER TRANSISTORS HfCTR0N“ 2SB536,2SB537/2SD381,2SD382 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING PNP/NPN SILICON EPITAXIAL TRANSISTOR DESCR IPTIO N The 2SB536, 2SB537 and 2SD381, 2SD382 are silicon epitaxial transistors intended for a wide variety of

Contextual Info: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

IRFY240C

Abstract: HEXFET pinout IRFY240CM
Contextual Info: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International

tda7294

Abstract: TDA7294 application note
Contextual Info: n * 7 z j S C S -T H O M S O N # . TDA7294 IM M i[L i« ô M ]0 (ê § 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY ADVANCE DATA • VERY HIGH OPERATING VOLTAGE RANGE (±40V ■ DMOSPOWER STAGE ■ HIGH OUTPUT POWER (UP TO 100W MU­ SIC POWER) ■ MUTING/STAND-BY FUNCTIONS

Dose

Abstract: transistor study Marconi radiation hard
Contextual Info: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates