TRANSISTORS ZB Search Results

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

fmmt4123

Abstract: ZB smd marking
Contextual Info: Transistors IC SMD Type Switching Transistors FMMT4123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Transistor BSX 63-10

Abstract: Transistor BSX 62-16 BSX62 Q60218-X62-B BSX63 Q60218-X62-C Q60218-X62-D Q60218-X63-B Q60218-X63-C
Contextual Info: BSX 62, BSX 63 NPN transistors for AF output stages and switching applications B S X 62 and B S X 63 are epitaxial silicon NPN planar transistors in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. The transistors are particularly suitable for A F output stages and as a medium-power switch.

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

Contextual Info: BDV91 BDV93 BDV95 _ J ^ILIP S I N T E R N A T I O N A L 5bE ]> • 7 1 1 Q û 2 b 0 0 4 3 4 0 b 23b M P H I N T - 3 3 - / 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended

Contextual Info: Philips Semiconductors Power Bipolar Transistors General TRANSISTOR RATINGS VCEmax Voltage ratings IC = x mA COLLECTOR TO BASE VCBmax The maximum permissible instantaneous voltage between collector and base terminals. The collector voltage is negative with respect to base in pnp transistors and

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes

TPV 3100

Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Contextual Info: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must

Contextual Info: QS6J3 Transistors Small switching −20V, −1.5A QS6J3 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance

Contextual Info: QS6J3 Transistors Small switching −20V, −1.5A QS6J3 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: Transistors IC SMD Type Product specification FMMT4123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

transistor BD 677

Abstract: BD 675 BD675 677d
Contextual Info: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

Contextual Info: • bbS3^31 00353^1 DSD H A P X N AUER PHILIPS/DISCRETE BSR30 to 33 L7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.

ZBF579

Contextual Info: ZBF569 ZBF579 SOT23 PNP SILICON PLANAR R.F. TRANSISTORS FEATURES. * HIGH fr UP TO 2.4GHz. * LOW NOISE <3.3dB AT 500MHz PARTMARKING DETAILS ZBF569 - F69 ZBF579 - F79 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZBF569 ZBF579 UNIT Collector-Base Voltage VcBO 35

BO677

Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
Contextual Info: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

n6532

Contextual Info: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )

Contextual Info: ZBF579 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)10

RSL020P03

Abstract: P-channel power mosfet 30V
Contextual Info: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications

Contextual Info: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram