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    TRIGGERING CIRCUIT FOR TRIC Search Results

    TRIGGERING CIRCUIT FOR TRIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM32ED70J476KE02L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022R61C104ME05L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033D70J224ME01D
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61H334KE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM2195C2A273JE01J
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    TRIGGERING CIRCUIT FOR TRIC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tricky

    Contextual Info: Application Notes Two Simple Solutions for Tricky Problems Here are two solutions that can help you create trouble-free designs. by Peter Alfke, Xilinx Applications Engineering, Xilinx, Peter@xilinx.com How to Eliminate False Triggering A s FPGA flip-flops become faster, they can


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    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


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    2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027 PDF

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


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    2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671 PDF

    DIAC DB2

    Abstract: D1 DB2 Diac triac diac applications circuit diagram 1.5ke68a1 db1 diac DB2 Diac diac with triac ac motor speed control circuit diagram triac analog control for inductive loads power variation circuit for arc welding schematic diagram for welding induction
    Contextual Info: AN308 Application note TRIAC analog control circuits for inductive loads Introduction The TRIACs of today are well suited to the requirements of switching inductive loads. TRIAC control circuits must be particularly well tuned to be both economical and applicable


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    AN308 DIAC DB2 D1 DB2 Diac triac diac applications circuit diagram 1.5ke68a1 db1 diac DB2 Diac diac with triac ac motor speed control circuit diagram triac analog control for inductive loads power variation circuit for arc welding schematic diagram for welding induction PDF

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


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    2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference PDF

    3N84

    Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
    Contextual Info: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    2NM46 2N327 3N84 2N4988 RCA SCR 2n 2N4991 3N81 2N4984 IN4I48 3N85 40v neon lamp PDF

    2n2646 equivalent

    Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    2N489-494â 2N2646-47â 2n2646 equivalent 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985 PDF

    tda1023 applications

    Abstract: Philips humidity sensor TDA1023 philips NTC thermistor 2322 2222 632 series capacitor
    Contextual Info: Relative Humidity Sensor DESCRIPTION This capacitive humidity sensor consists of a plastic film, both sides of which are coated with gold, thus forming a capacitor element. The dielec­ tric constant of the film changes as a function of relative humidity in the atmosphere. As a con­


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    Contextual Info: f Z 7 SCS-THOMSON Ä 7# ML8204 ML8205 TONE RINGER DESIGNED FOR TELEPHONE BELL RE­ PLACEMENT LOW CURRENT DRAIN SMALL SIZE "MINIDIP" PACKAGE ADJUSTABLE 2-FREQ UENCY TONE ADJUSTABLE W ARBLING RATE BUILT-IN HYSTERESIS PREVENTS FALSE TRIGGERING AND ROTARY DIAL "CHIRPS"


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    ML8204 ML8205 ML8204) ML8205) MLS204 ML8204/ML8205 L8204/8205 ML8204/5 PDF

    96L02

    Abstract: amp sealant 56 96L02DMQB 96L02FMQB DM96L02 DM96L02N J16A N16E W16A
    Contextual Info: E M IC D N D U C T O R t 96L02/DM96L02 Dual Retriggerable Resettable Monostable Multivibrator General Description Features The 96L02 is a dual T T L m onostable m ultivibrator w ith trig ­ ger m ode selection, reset capability, rapid recovery, inter­ nally com pensated reference levels and high speed capabil­


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    96L02/DM96L02 96L02 amp sealant 56 96L02DMQB 96L02FMQB DM96L02 DM96L02N J16A N16E W16A PDF

    3N81

    Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
    Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    multivibrator lock-out app note

    Contextual Info: EM ICONDUCTQ R t 96L02/DM96L02 Dual Retriggerable Resettable Monostable Multivibrator General Description Features The 96L02 is a dual T T L m onostable m ultivibrator w ith trig ­ ger m ode selection, reset capability, rapid recovery, inter­ nally com pensated reference levels and high speed capabil­


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    96L02/DM96L02 96L02 multivibrator lock-out app note PDF

    SCR TRIGGER PULSE TRANSFORMER

    Abstract: 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic
    Contextual Info: APPLICATION NOTE 31 LATCH-UP PROTECTION OF CMOS ICs LATCH-UP PROTECTION OF CMOS ICs By RonAN-31 Vinsant INTRODUCTION In most applications, the triggering of the parasitic SCR results in the destruction of the IC. The only time destruction does not occur is when the supply current to the device is


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    AN-31 SCR TRIGGER PULSE TRANSFORMER 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic PDF

    3N83

    Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
    Contextual Info: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


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    20/iS' /3N83 3N83 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987 PDF

    KA2 DIODE

    Abstract: DT 7130 IC rc 3150 IRKT 180
    Contextual Info: International S Rectifier s e r ie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ ■ I ■ F a st tu rn -o ff th yristo r F a st re c o v e ry d io d e H igh s u rg e c a p a b ility E le c tric a lly is o la te d b a s e p la te


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    Tj-125 -25A/MS -350A Tj-125-C KA2 DIODE DT 7130 IC rc 3150 IRKT 180 PDF

    Amperex hl

    Contextual Info: AN31 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET


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    DS00763A-page Amperex hl PDF

    Contextual Info: Jto Tfva<; In s t r u m e n t s Data sheet acquired from Harris Sem iconductor SCHS142 September 1997 CD74HC123, CD74HCT123, CD74HC423, CD74HCT423 High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Resets Features Description • Overriding Reset Terminates Output Pulse


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    CD74HC123, CD74HCT123, CD74HC423, CD74HCT423 CD74HC423 CD74HCT423 100kil PDF

    PHILIPS SCR

    Abstract: BYV1030 equivalent 1N270 diode equivalent
    Contextual Info: AN763 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET


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    AN763 sup00 DS00763A* 0763A-page PHILIPS SCR BYV1030 equivalent 1N270 diode equivalent PDF

    DIACS

    Contextual Info: TECCOR ELECTRONICS TO -92 Package SMT Package Product Description Teccor’s TO-92 and surface mount bilateral trigger diacs offer a range of voltage characteristics from 30 to 45 volts. The diac semiconductor is a full-wave or bidirectional thyristor. It is


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    Contextual Info: P *3 3 S CD74HC123, CD74HCT123, CD74HC423, CD74HCT423 High S p e e d C M O S Logic Dual Retriggerable Monostable Multivibrators with R esets September 1997 Features Description • Overriding Reset Terminates Output Pulse The Harris CD74HC123, CD74HCT123, CD74HC423 and


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    CD74HC123, CD74HCT123, CD74HC423, CD74HCT423 CD74HC423 CD74HCT423 100kQ. PDF

    Contextual Info: R C H I I - D S E M IC O N D U C T O R tm 96LS02/DM96LS02 Dual Retriggerable Resettable Monostable Multivibrator • Broad tim ing resistor range— 1.0 k£l to 2.0 M il General Description ■ O utput Pulse W idth is variable o ver a 2000:1 range by resistor control


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    96LS02/DM96LS02 96LS02 16-Lead 96LS02DMQB DM96LS02M DM96LS02N PDF

    AN763

    Abstract: scr gate drivers ic 1N270 diode equivalent diodes 1n270 SCR TRIGGER PULSE TRANSFORMER BYV10-30 diodo Zener 4.1v TC426 diode germanium 1n270 germanium transistor pnp
    Contextual Info: AN763 Latch-Up Protection For MOSFET Drivers Author: Cliff Ellison Microchip Technology Inc. Source P+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note


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    AN763 DS00763C-page AN763 scr gate drivers ic 1N270 diode equivalent diodes 1n270 SCR TRIGGER PULSE TRANSFORMER BYV10-30 diodo Zener 4.1v TC426 diode germanium 1n270 germanium transistor pnp PDF

    SCR induction furnace circuit diagram

    Abstract: schematic diagram power inverter 1500w schematic diagram inverter 2000w 1200W inverter "circuit diagram" sc146d Triac cross reference scr 106d 12v to 220v inverter schematic diagram 2000w 220v DC MOTOR SPEED CONTROLLER using opto coupler 12 volt dc to 220v ac inverter 1500w schematic diagram solar tracker circuits
    Contextual Info: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , 0 .3 A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 150 A COLD


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    1N270 diode equivalent

    Abstract: BYV10-30 digital triggering scr diodo Zener 4.1v SCR TRIGGER PULSE TRANSFORMER SCR gate drive circuit AN763 TC913 germanium transistor pnp 1N270
    Contextual Info: M AN763 Latch-Up Protection For MOSFET Drivers Author: Microchip Technology Inc. Source P+ VS+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note


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    AN763 D-85737 DS00763B-page 1N270 diode equivalent BYV10-30 digital triggering scr diodo Zener 4.1v SCR TRIGGER PULSE TRANSFORMER SCR gate drive circuit AN763 TC913 germanium transistor pnp 1N270 PDF