TRIODE SOT23 Search Results

Contextual Info: S525T VISHAY Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode 1 Features • Integrated gate protection diodes • Low feedback capacitance • Low noise figure 2 3 Applications High frequency stages up to 300 MHz. D G Mechanical Data

Contextual Info: S525T VISHAY Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features 1 • Integrated gate protection diodes • Low feedback capacitance • Low noise figure 2 Applications 3 High frequency stages up to 300 MHz. D Mechanical Data G

BB515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

BF543A

Abstract: BF543A-GS08 BF543B-GS08
Contextual Info: Not for new design, this product will be obsoleted soon BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component

BCW66

Contextual Info: BF999E6393 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferable in FM applications 1 • Pb-free ROHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

marking code 11s

Abstract: MARKING CODE 21S BF543
Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration

Contextual Info: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S

Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration

BF999

Abstract: triode sot23
Contextual Info: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S

BF999

Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package

BF999

Abstract: triode sot23
Contextual Info: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package

n-channel SOT-23 Depletion Mode

Contextual Info: Not for new design, this product will be obsoleted soon S525T Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode 1 Features • • • • • Integrated gate protection diodes Low feedback capacitance e3 Low noise figure Lead Pb -free component

Contextual Info: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BF543

Abstract: triode sot23
Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration

BF543A

Abstract: BF543
Contextual Info: BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

bb515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package

MARKING CODE 21S

Abstract: 12NA50
Contextual Info: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped

Contextual Info: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Q62702-F1372

Contextual Info: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

BF543A

Abstract: BF543B-GS08 BF543 BF543BGS08
Contextual Info: BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Bb515

Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package

Contextual Info: BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

BF 22 W

Contextual Info: BF 543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration

n-channel SOT-23 Depletion Mode

Contextual Info: S525T Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode 1 Features • • • • • Integrated gate protection diodes Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC