TRW 810 Search Results

TR201

Abstract: TR306 injector for rocket engine TR306 liquid apogee engines injector Thruster injector pintle rocket pintle injector rocket liquid propulsion engine of ballistic missile
Contextual Info: AIAA 2000-3871 Page 1 of 22 TRW Pintle Engine Heritage and Performance Characteristics Gordon A. Dressler* and J. Martin Bauer* TRW Inc., Redondo Beach, CA 90278 Abstract The pintle injector rocket engine is fundamentally different from other rocket engines, which nearly universally employ a

1N3062

Contextual Info: TDC1044 Monolithic Video A /D Converter 4-Bit, 25M sps The TRW TDC1044 is a 25Msps MegaSample Per Second fully parallel analog-to-digital converter, capable of converting an analog signal with full-power frequency Features • 4-Bit Resolution • 1/4 LSB Non-Linearity

TRW Connectors

Abstract: marking B26 diode SCHOTTKY trw resistor 810 souriau Schottky Diode B29 A2-15 SOURIAU Robinson Nugent pga 1020J1C 1N5818 74LS174
Contextual Info: TDC1020 High-Speed Monolithic A/D Converter Features 10-Bit, 20Msps • 20Msps Conversion Rate • 10-Bit Resolution • Overflow Flag The TRW TDC1020 is a 20Msps IMegaSample Per Second full-parallel flash) analog-to-digital converter, capable of converting a video signal into a stream of

CA5800

Abstract: TRW 3894 CAS800 CA5800H TRW CA amplifier trw CATV S43E trw 630 trw rf
Contextual Info: T R W ELE< CNPNT/ R F fi1! D E ^ñ fi2 S a 2 M w 0 0 0 3e!3 e! t> Ê s^ 3 m s^ m m m RF Devices Division TRW Electronic Components Group £ ¿ t W W CA5800 VHF-UHF Linear Amplifier 10-1000 MHz, 1W Output Power • Wide Bandwidth: • 43dBm Third Order Intercept

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

THC1201S3B

Abstract: B1317 THC1201
Contextual Info: TRY* THC1201 Complete High-Speed A/D Converter 12-Bit, 10M sps The THC1201 is a complete 12-bit 10Msps MegaSamples Per Second analog-to-digital converter that includes all the circuitry required to digitize signals within a DC to 70MHz band. With its two-step architecture, the

pmi op400

Abstract: PMI OP 400 B24DA 86D9-264-6114-7550E1 1N3062 THC1202 THC1202E1C THC1202S6V 40-pin right-angle male connector ttl oscillator
Contextual Info: TH C 1202 Complete High-Speed A/D Converter Features Conversion Rate DC To 10M sps 12-Bit, 10Msps Large-Signal B a n d w id th > 7 0 M H z N o M issing Codes, G uaranteed The TH C 1202 is a com plete 1 2 -b it 10M sps a n a lo g -to digital converter th a t includes all th e c irc u itry required to

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2220G8C

Contextual Info: TRww TMC2220/TMC2221 CMOS Programmable Digital Output Correlators 4 x 3 2 Bit, 20MHz 1 x 128 Bit, 20MHz The TM C 2220 20M H z, TTL com patible CMOS is composed of four separate 1 x 32 correlator The correlation scores of the four modules are com bined and output on tw o separate parallel,

amd processor based Circuit Diagram

Abstract: address generator logic vhdl code vhdl code for memory controller AM29PL160 MCF5307
Contextual Info: Interfacing the Am29PL160 to the Motorola ColdfireTM Processor Application Note -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ

trw RF POWER TRANSISTOR

Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
Contextual Info: TA0012
 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier       
 efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key

trw rf transistor

Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
Contextual Info: TA0012
 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier       
 efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

TDC1002

Abstract: TDC1005B9A TDC1001 TDC1006 TDC1005 PIN-13DSB 1005B9A TDC1011 TMC2011 TMC3220
Contextual Info: 7 # ? rV Memory/Storage C lo c k P ro d u c t D esc rip tion S ize R a te 1 M H z P o w e r1 (W a tts ) Package G ra d e s2 N o te s Page TD C 10 0 5 Shift Register 64 x 2 Bit 25 24 0.6 0.6 B9 B9 16 Pin DIP 16 Pin DIP C A Expandable/Cascadable, K3 TD C 10 0 6

L298D

Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E
Contextual Info: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in

Contextual Info: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V7245AWZJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

Contextual Info: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V725AWZJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V725AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

18v10

Abstract: GAL 18v10 programming Guide
Contextual Info: Lattice Semiconductor Corporation G A L 2 2 V 1 0 F a m ily G AL18V10 G AL22V10 G AL26C V12 ” FEATURES • HIGH PERFORMANCE E ^M O S* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS* 111Advanced CMOS Technology

810B

Contextual Info: MEMORY • IS MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE ■ DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and programmable Flash memory cards capable of storing and. retrievin^siarge amounts of data. The memory

lattice 22v10 programming specification

Abstract: 6355ED GAL22V10 18v10 2cv11 gal22v10-15 9H327 22V10 2cv1
Contextual Info: LATTICE SEMICONDUCTOR 2 SE D Lattice Semiconductor Corporation • 53flfacm GAL22V10 Family GAL18V10 GAL22V10 GAL26CV12 " FEATURES . HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = SO MHz — TTL Compatible 8 * 16 mA Outputs

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-422LFB721 3.3 V OPERATION 2M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-422LFB721 is a 2,097,152 words by 72 bits dynamic RAM module on which 9 pieces of 16 M DRAM : ^¡PD4217805L are assembled.

fujitsu PCMCIA flash

Contextual Info: •T o T o p f tìm u p i In d e x MEMORY ÌBI S MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and

68-PIN

Abstract: 84-PIN cpga pinout 208-pin cpga
Contextual Info: Military 5.0V pASIC 1 Family Military 5.0V pASIC 1 Family - Very-High-Speed CMOS FPGA Military 5.0V pASIC 1 Family DEVICE HIGHLIGHTS FEATURES Device Highlights Features Very High Speed • ViaLink“ metal-to-metal programmable technology, allows counter speeds over 150 MHz and

22v10 gal

Abstract: GAL22V10G
Contextual Info: Lattice Semiconductor GAL22V10 Family G A L I S V IO G AL22V10 Corporation FE A TU R E S • HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS III Advanced CMOS Technology