TRW TDS Search Results

LMU16GMB

Contextual Info: L M U 1 6 /2 1 6 16 x 16-bit Parallel Multiplier D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 45 ns Worst-Case Multiply Time □ Low Power CMOS Technology □ Replaces TRW MPY016/TMC216, Cypress CY7C516, IDT 7216L, and AMD Am29516 □ Two's Complement, Unsigned, or

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

EDI411024C

Contextual Info: m o _ EDI411024C i Electronic D*4gn» Ine. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic railLDHflDNAmf Features The ED 1411024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x1. The use of triple-layer polysilicon process, combined with

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT f / PD42S4260AL, 424260AL 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S4260AL, 424260A L are 262,144 w ords by 16 bits CMOS dynam ic RAMs. The fast page mode and

Contextual Info: PRELIMINARY SPECIFICATION REV. 0 G M 7 1 C 1 0 0 0 1048576 WORDS x 1 BIT CMOS DYNAMIC RAM Description Pin Configuration 18 PLASTIC DIP TOP VIEW The GM 71C1000 is the new generation dynamic RAM organized 1048576 x 1 Bit. GM 71C1000 has realized higher density, higher performance and various func­

424260-70

Abstract: 424260-70 nec japan 424260-80 PD424260LE
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 4 2 4 2 6 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /uPD424260 is a 262,144 words by 16 bits dynamic CMOS RAM. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

GM71C1000-80

Abstract: GM71C1000 GM71C1000Z80 GM71C1000-10 GM71C1000-12
Contextual Info: PRELIMINARY SPECIFICATIO N REV. 0 G M 71 C 10 00 1048576 WORDS x 1 BIT CMOS DYNAMIC RAM Pin Configuration Description 18 PLASTIC DIP TOP VIEW The G M 7 1 C 1 0 0 0 is th e new generation d y n am ic RAM organized 10 4857 6 x 1 Bit. G M 7 1 C 1 0 0 0 has realized

Contextual Info: TT M/HITE /MICROELECTRONICS 4Mx4 CMOS EDO Dynamic RAM 3.3V WPDE4M4V-XMJX PRELIMINARY* PLASTIC PLUS FEATURES • Fast Access Time tRAc : 60, 70ns PIN CONFIGURATION Power Supply: 3.3V ±0.3V 300 MIL SOJ TOP VIEW Vcc [ 1 ■ Packaging ■ Industrial and M ilita ry Temperature Ranges

Contextual Info: Order this document by MCM318165CV/D SEMICONDUCTOR TECHNICAL DATA - 1M Advance Information MCM318165CV 16M CMOS Wide DRAM Family E D O , 1 M x 1 6 , 1 K EDO

HY5117400BT

Abstract: HY5117400B
Contextual Info: HY5117400B, HY5116400B -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.

Contextual Info: >«YÜHD«I > -• HYM536810E M1-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810E M1-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

Contextual Info: HB 56RW872ES Series 8,388,608-Word x 72-Bit ECC High Density Dynamic RAM Module HITACHI Preliminary Rev. 0 Dec. 19, 1995 The HB56RW 872ES belongs to 8 Byte DIM M (Dual In-Line M emory M odule) family, and has been developed as an optim ized main memory solution for 4 and 8 Byte processor applications.

74hc06

Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
Contextual Info: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로

Contextual Info: O K I Semiconductor MSM6691 DRAM Interface IC GENERAL DESCRIPTION DRAMs can be used for voice storage by connecting the MSM6691 with OKI's integrate R /W R ead /W rite ICs, the M SM 6388, and the MSM6588. The MSM6691 translates the signals associated with the dedicated serial register interface of the M SM 6388 and MSM 6588 driver

TLP250 MOSFET DRIVER application note

Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
Contextual Info: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation

Contextual Info: O K I Semiconductor MSM6587 524,288-WORD x 1-BIT SERIAL REGISTER GENERAL DESCRIPTION M SM 6587 is a serial register in 524,288 words x 1 bit configuration featuring medium speed operation with low-pow er consumption. A refresh timer and refresh counter are built

Contextual Info: HY51V 16100B 'H Y U N D A I 1 6 M x 1 -bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 16,777,216 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the

Contextual Info: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V6445AWZJ -5, -6 HYPER PAGE MODE 536870912 - BIT 8388608 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V6445AWZJ is 8388608-word x 64-bit dynamic ram module. This consist of eight industry standard

Contextual Info: MITSUBISHI LSIs ìin a ry Spee. Specifications subject to change without notice. MH4V7245AWXJ -5, -6 HYPER PAGE MODE 301989888 - BIT 4194304 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION The MH4V7245AWXJ is 4194304-word x 72-bit dynamic ram module. This consist of four industry standard 4M x

Contextual Info: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V7245AZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

Contextual Info: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V645AWZJ -5, -6 HYPER PAGE MODE 536870912 - BIT 8388608 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V645AWZJ is 8388608-word x 64-bit dynamic ram module. This consist of eight industry standard

Contextual Info: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH16V6445AWJ -5, -6 HYPER PAGE MODE 1073741824 - BIT 16777216 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V6445AWJ is 16777216-word x 64-bit dynamic

M5M467405AJ

Contextual Info: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH16V725AWJ -5, -6 HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V725AWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard

Contextual Info: MITSUBISHI LSIs ìinary Spee. Specifications subject to change without notice. MH4V7245AWXJ -5, -6 HYPER PAGE MODE 301989888 - BIT 4194304 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION The MH4V7245AWXJ is 4194304-word x 72-bit dynamic ram module. This consist of four industry standard 4M x