TS8514VA Search Results
TS8514VA Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TS8514VA | Vishay Semiconductor Opto Division | Optoelectronics - Infrared, UV, Visible Emitters - EMITTER IR 850NM 100MA SMD | Original | 97.85KB |
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Vishay Semiconductors TS8514VAEMITTER IR 850NM 100MA SMD |
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Vishay Semiconductors TS8514VA-SF-FVS TS8514VA-SF-F |
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TS8514VA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
TS8514VA TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
TS8514VAContextual Info: TS8514VA Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: = 850 nm |
Original |
TS8514VA 2002/95/EC 2002/96/EC TS8514VA 11-Mar-11 | |
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Contextual Info: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
TS8514VA TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
TS8514VA TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
TS8514VAContextual Info: TS8514VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.355 x 0.355 x 0.17 • Peak wavelength: λ = 850 nm |
Original |
TS8514VA 2011/65/EU 2002/96/EC TS8514VA 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare |
Original |
VMN-SG2200-1502 |