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    TSAL4400 Price and Stock

    Vishay Semiconductors TSAL4400

    EMITTER IR 940NM 100MA RADIAL
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    DigiKey TSAL4400 Bulk 18,127 1
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    • 100 $0.1951
    • 1000 $0.15271
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    Vishay Intertechnologies TSAL4400

    IR EMITTER HIGH POWR 950NM 3MM 25DEG-e2 - Bulk (Alt: 98K1841)
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    Avnet Americas TSAL4400 Bulk 16 Weeks, 4 Days 1
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    TSAL4400 Bulk 10 Weeks 5,000
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    Mouser Electronics TSAL4400 31,683
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    Verical TSAL4400 34,850 86
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    TSAL4400 4,978 59
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    Newark TSAL4400 Bulk 5,423 1
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    Future Electronics TSAL4400 Bag 129,590 10 Weeks 1
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    Bristol Electronics TSAL4400 2,342
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    Quest Components TSAL4400 920
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    TTI TSAL4400 Bulk 3,000 1,000
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    TME TSAL4400 1,974 1
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    ComSIT USA TSAL4400 5,000
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    Chip 1 Exchange TSAL4400 31,089
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    Avnet Asia TSAL4400 12 Weeks 5,000
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    Chip1Stop TSAL4400 Bulk 34,850
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    TSAL4400 801
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    EBV Elektronik TSAL4400 11 Weeks 5,000
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    New Advantage Corporation TSAL4400 105,000 1
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    Vishay Intertechnologies TSAL4400-CS12

    IR EMITTER HIGH POWR 950NM 3MM 25DEG-e2 - Bulk (Alt: TSAL4400-CS12)
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    Avnet Americas TSAL4400-CS12 Bulk 10 Weeks 10,000
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    EBV Elektronik TSAL4400-CS12 11 Weeks 2,000
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    Vishay Intertechnologies TEFD4300F

    Photodiodes T-1 770 to 1070nm +/-20 deg
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    Mouser Electronics TEFD4300F 12,397
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    TTI TEFD4300F Reel 10,000 5,000
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    Vishay Intertechnologies TEFD4300

    Photodiodes T-1 350 to 1120nm +/-20 deg
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    Mouser Electronics TEFD4300 8,332
    • 1 $0.7
    • 10 $0.442
    • 100 $0.32
    • 1000 $0.223
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    TTI TEFD4300 Reel 5,000
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    Find more TSAL4400 price and stock on Findchips.com

    TSAL4400 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSAL4400 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 3 mm (T-1) Package Original PDF

    TSAL4400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm


    Original     		PDF TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 11-Mar-11

    TSAL4400

    Abstract: No abstract text available
    Text: TSAL4400 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL4400 TSAL4400 D-74025 20-May-99

    TSAL4400

    Abstract: No abstract text available
    Text: TSAL4400 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL4400 TSAL4400 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL4400 TSAL4400 TEFT4300 2002/95/EC 2002/96/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 3 mm T-1 Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant


    Original     		PDF TSAL4400 TSAL4400 D-74025 05-May-04

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant


    Original     		PDF TSAL4400 TSAL4400 D-74025 08-Mar-05

    TSAL4400

    Abstract: APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led
    Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL4400 TEFT4300 TSAL4400 2002/95/EC 2002/96/EC 18-Jul-08 APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm


    Original     		PDF TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm


    Original     		PDF TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 2002/95/EC. 2011/65/EU. JS709A

    Application NOTES TSAL4400

    Abstract: APPLICATION CIRCUIT OF TSAL4400 TSAL4400
    Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant


    Original     		PDF TSAL4400 TSAL4400 08-Apr-05 Application NOTES TSAL4400 APPLICATION CIRCUIT OF TSAL4400

    TSAL4400

    Abstract: No abstract text available
    Text: TSAL4400 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 3 mm T-1 Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant


    Original     		PDF TSAL4400 TSAL4400 D-74025 24-Jun-03

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL4400 TSAL4400 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm


    Original     		PDF TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    tsal4400

    Abstract: TSAL440
    Text: TSAL4400 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 3 mm T-1 Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant


    Original     		PDF TSAL4400 TSAL4400 D-74025 05-May-04 TSAL440

    TSAL4400

    Abstract: No abstract text available
    Text: TSAL4400 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL4400 TSAL4400 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL4400 TEFT4300 TSAL4400 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant


    Original     		PDF TSAL4400 TSAL4400 18-Jul-08

    TEFD4300

    Abstract: APPLICATION CIRCUIT OF TSAL4400
    Text: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times


    Original     		PDF TEFD4300 VSLB3940, TSUS4300, TSAL4400 2002/95/EC 2002/96/EC TEFD4300 2011/65/EU 2002/95/EC. APPLICATION CIRCUIT OF TSAL4400

    sharp laser diodes

    Abstract: TSOP855
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0090-1010 sharp laser diodes TSOP855

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1311 TSSP4038

    Untitled

    Abstract: No abstract text available
    Text: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 2002/95/EC. 2011/65/EU. JS709A

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    Infrared emitter

    Abstract: "Photo Interrupter" TSAL4400 "Photo Interrupter" Application Note APPLICATION CIRCUIT OF TSAL4400 smd diode DH TSHA4400 TSKS5400 TSMF3700 TSML3710
    Text: VISHAY Vishay Semiconductors Aging of Infrared Emitter Components Typical degradation of radiant power after 4000 h operation Relative Radiant Power Introduction Over its lifetime, an infrared emitter gradually loses its radiant power. This type of aging or degradation has


    Original     		PDF 22-Apr-04 Infrared emitter "Photo Interrupter" TSAL4400 "Photo Interrupter" Application Note APPLICATION CIRCUIT OF TSAL4400 smd diode DH TSHA4400 TSKS5400 TSMF3700 TSML3710

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­


    OCR Scan     		PDF TSAL4400 TSAL4400 D-74025 04-Mar-98