TSAL5100 VISHAY Search Results

TSAL5100 Vishay

Abstract: TSAL5100
Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

TSAL5100

Contextual Info: TSAL5100 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

TSAL5100

Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package D escription TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­

Contextual Info: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded

TSAL5100

Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

TSAL5100 Vishay

Abstract: TSAL5100
Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

Contextual Info: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded

TSAL5100 Vishay

Abstract: TSAL5100
Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

Contextual Info: TSAL5100 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

TSAL5100

Abstract: high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode,
Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in

Contextual Info: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded

TSAL5100

Contextual Info: TSAL5100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

TSAL5100

Contextual Info: TSAL5100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

Contextual Info: TSAL5100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

TSAL5100

Abstract: Infrared Emitting Diode
Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm

Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm

IR LED 790 nm

Abstract: IR LED 800 nm BPV23NF TSMS1000 PH 40 E BPW34 application S186P 11 NM 65 N TSAL7600 BPV10NF
Contextual Info: VISHAY VISHAY INTERTECHNOLOGY, INC. Vishay Semiconductors PIN PHOTODIODES and FILTER OPTIONS A Device B Package C Photo Sensitive Area / mm2 D E F ±Ê Ira / ÌA G Recommended IR Emitters PIN Photodiodes without Filter - General Application BPV10 A 0.78 20°

IEC60601-2-22

Abstract: APPLICATION CIRCUIT OF TSAL4400 IEC608251 voting elements CQX48B CQY36N CQY37N IEC60825-1 LD50 TSAL4400
Contextual Info: VISHAY Vishay Semiconductors Safety Toxicity Although gallium arsenide and gallium aluminium arsenide are both arsenic compounds, under normal use conditions they should be considered relatively benign. Both materials are listed by the 1980 NIOH “Toxicology of Materials” with LD50 values Lethal

APPLICATION CIRCUIT OF TSAL4400

Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
Contextual Info: Vishay Semiconductors Safety Reliability and Safety All semiconductor devices have the potential of failing or degrading in ways that could impair the proper operation of safety systems. Well-known circuit techniques are available to protect against and minimize the effects of such occurrences. Examples of

3 mm ir receiver

Abstract: TSAL6200* transmitter TSAL6200 transmitter Telefunken ir receiver very long range ir remote control TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6200
Contextual Info: Vishay Telefunken General Overview of IR Transmission in Free Space The free air IR data transmission, IR remote control as well as the most optoelectronic sensors and light barrier systems work with a wavelength between 870nm and 950nm. The emitter and detector

APPLICATION CIRCUIT OF TSAL4400

Abstract: smd 0306 package TSKS5400S TSMF3700 TSAL5100 "Photo Interrupter" Application Note TSAL4400 TSHA4400 TSKS5400 TSML3710
Contextual Info: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AGING OF INFRARED EMITTER COMPONENTS TECHNICAL INFORMATION w w w. v i s h a y. c o m Aging of Infrared Emitter Components INTRODUCTION TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION DEVICE AGING AND DEVICE

diode SR 360

Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
Contextual Info: Eye Safety Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC EN DIN 60825-1 LEDs are removed from IEC 60825-1 but are still covered by the free air communication safety standard IEC 60825-12. Therefore LEDs for free air communication are still to be