TSAL6100 APPLICATION Search Results
TSAL6100 APPLICATION Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CA3059 |
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CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications |
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CA3079 |
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CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications |
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CA3059-G |
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CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications |
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AM79866AJC |
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AM79866A - Physical Data Receiver |
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TCM3105NL |
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TCM3105NL - FSK Modem, PDIP16 |
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TSAL6100 APPLICATION Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSAL6100Contextual Info: TSAL6100 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL6100 TSAL6100 D-74025 20-May-99 | |
TSAL6100
Abstract: infrared emitters and detectors TSAL6100 application
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TSAL6100 TSAL6100 08-Apr-05 infrared emitters and detectors TSAL6100 application | |
TSAL6100
Abstract: TSAL6100 application
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TSAL6100 TSAL6100 08-Apr-05 TSAL6100 application | |
TSAL6100Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL6100 TSAL6100 D-74025 20-May-99 | |
Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL6100 TSAL6100 D-74025 20-May-99 | |
TSAL6100Contextual Info: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL6100 TSAL6100 D-74025 20-May-99 | |
TSAL6100Contextual Info: TSAL6100 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL6100 TSAL6100 D-74025 20-May-99 | |
TSAL6100 application
Abstract: TSAL6100
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TSAL6100 TSAL6100 D-74025 07-Apr-04 TSAL6100 application | |
Contextual Info: Tem ic TSAL6100 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 5 mm 'T-13A Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol |
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TSAL6100 TSAL6100 D-74025 18-Aug-98 | |
TSAL6100Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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TSAL6100 TSAL6100 18-Jul-08 | |
TSAL6100
Abstract: TSAL61
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TSAL6100 TSAL6100 D-74025 05-Mar-05 TSAL61 | |
TSAL6100 applicationContextual Info: TSAL6100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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TSAL6100 TSAL6100 D-74025 04-May-04 TSAL6100 application | |
Contextual Info: TSAL6100 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
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TSAL6100 TSAL6100 D-74025 04-May-04 | |
Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11 | |
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Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
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TSAL6100 TSAL6100 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power |
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSAL6100
Abstract: high power infrared led
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led | |
TSAL6100Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11 | |
TSAL6100 application
Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
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TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode, | |
TSSP4P38
Abstract: infrared distance sensor
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differ9337-2726 VMN-PL0438-1204 TSSP4P38 infrared distance sensor | |
Infrared sensor TSOP 1738
Abstract: automatic door infrared sensor proximity sensor faucet tsop sensor infrared sensor TSOP 38 TSOP4P38 automatic faucet TSAL6100 application tsop4038 TSAL6100
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VMN-PL0438-xxxx Infrared sensor TSOP 1738 automatic door infrared sensor proximity sensor faucet tsop sensor infrared sensor TSOP 38 TSOP4P38 automatic faucet TSAL6100 application tsop4038 TSAL6100 | |
sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
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VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note | |
Vishay TYPE 40D
Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
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VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707 |