TSAL7200 Search Results
TSAL7200 Price and Stock
Vishay Semiconductors TSAL7200EMITTER IR 940NM 100MA RADIAL |
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Vishay Intertechnologies TSAL7200 |
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TSAL7200 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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TSAL7200 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package | Original | 82.96KB | 5 |
TSAL7200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSAL7200Contextual Info: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs |
Original |
TSAL7200 TSAL7200 D-74025 20-May-99 | |
TSAL7200Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08 | |
Contextual Info: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 08-Apr-05 | |
high power infrared led
Abstract: TSAL7200
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TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08 high power infrared led | |
Contextual Info: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
Original |
TSAL7200 2002/95/EC 2002/96/EC TSAL7200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
TSAL7200Contextual Info: TSAL7200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs |
Original |
TSAL7200 TSAL7200 D-74025 20-May-99 | |
TSAL7200Contextual Info: TSAL7200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in Package 0 5 mm T-VA Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant |
OCR Scan |
TSAL7200 TSAL7200 D-74025 21-Sep-98 | |
Contextual Info: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
Original |
TSAL7200 2002/95/EC 2002/96/EC TSAL7200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSAL7200 TSAL7200 2002/95/EC 2002/96/EC 11-Mar-11 | |
Contextual Info: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs |
Original |
TSAL7200 TSAL7200 D-74025 20-May-99 | |
Contextual Info: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 D-74025 11-May-04 | |
TSAL7200Contextual Info: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 D-74025 07-Apr-04 | |
Contextual Info: TSAL7200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs |
Original |
TSAL7200 TSAL7200 D-74025 20-May-99 | |
TSAL7200Contextual Info: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs |
Original |
TSAL7200 TSAL7200 D-74025 20-May-99 | |
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Contextual Info: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 D-74025 23-Jun-04 | |
Contextual Info: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm |
Original |
TSAL7200 2002/95/EC 2002/96/EC TSAL7200 11-Mar-11 | |
Contextual Info: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 D-74025 01-Oct-04 | |
Contextual Info: TSAL7200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 D-74025 11-May-04 | |
TSAL7200Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
TSAL7200 TSAL7200 08-Apr-05 | |
sharp laser diodes
Abstract: TSOP855
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vse-db0090-1010 sharp laser diodes TSOP855 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
3 mm ir receiver
Abstract: TSAL6200* transmitter TSAL6200 transmitter Telefunken ir receiver very long range ir remote control TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6200
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870nm 950nm. 3 mm ir receiver TSAL6200* transmitter TSAL6200 transmitter Telefunken ir receiver very long range ir remote control TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6200 |