TSC 1003 Search Results

chn 4558 c

Abstract: temic 0675 d4 temic 0675 temic 0675 d6 chn 4558 TFK U 3212 M TFK 626 E 1024 TFK 839 str f 6456 diagram Tfk 821
Contextual Info: TSC 80251A1 TSC 80251A1 Extended 8–bit Microcontroller with Analog Interfaces Datasheet – 1996 TSC 80251A1 Table of Contents General Introduction Extended 8–bit Microcontroller with Analog Interfaces . . . . . . . . . . . . . . . . . 1. Section I: Introduction to TSC80251A1

Contextual Info: SF1001G THRU SF1006G TSC S 10.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 400 Volts Current 10.0 Amperes t o -:>20 Features -v^ ^ .186 4.70 ,17£(4.44) Low forward voltage drop High current capability High reliability High surge current capability

Contextual Info: KBU1001G THRU KBU1007G TSC S Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 10.0 Amperes KBU Features .935 23.7 .280(7.1) .260(6.6) .895 (2277} .160(4.1) .140(3.6) Ideal for printed circuit board Reliable low cost construction

Contextual Info: TSC KBU1001 THRU KBU1007 S5 Single Phase 10 AMPS. Silicon Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 10 0 Amperes KBU Features .935 23.7 ~.895(22.7)" .160(4.1) .140(3.6) High surge current capability Ideal for printed circuit board Reliable low cost construction technique

su 100t

Abstract: L05A
Contextual Info: TSC $ FRA1001G THRU FRA1007G 10 A M P S . G la s s Passivated Fast R ecovery Rectifiers Voltage R a n g e 50 to 1000 Volts Current 10 A m p ere s TO -220A F e a tu re s "i* Low forward voltage drop High current capability High reliability High surge current capability

Contextual Info: TSC H E R 1 0 0 1 G T H R U H E R 1 0 0 8 G 1 0 .0 A M P S . G la s s P a s s iv a te d H ig h E ffic ie n t R ec tifie rs S Voltage Range 50 to 1000 Volts Current 10.0 Amperes 1‘0 -2 2 0 Features ^ A -4- .185 4.70 .175 4.44) Low forward voltage drop High current capability

AZC002-02N

Abstract: ESD6V1 LL4148 nxp B20S CPDT-5V0U BZX844-C33 CPDU5V0 tsc 429 VDZ11B CZRU52C15
Contextual Info: Comchip - Complete Cross Reference # Company Industry type Nearest Comchip equivalent 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

Contextual Info: KBU1001G thru KBU1007G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength - Typical IR less than 0.1 A - High surge current capability

SFF1001G

Abstract: SFF1004G SFF1005G SFF1006G SFF1007G SFF1008G SFF1001G-SFF1004G
Contextual Info: SFF1001G thru SFF1008G Taiwan Semiconductor CREAT BY ART Isolated Glass Passivated Super Fast Rectifiers FEATURES - High efficiency, low VF. - High current capavility - High reliability - High surge current capability - Low power loss. - UL Recognized File # E-326243

Contextual Info: GBU1001 thru GBU1007 Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Single-Phase Bridge Rectifier - Ideal for printed circuit board - High case dielectric strength of 1500 VRMS - High surge current capability - Typical IR less than 0.1 A - UL Recognized File # E-326243

Contextual Info: SFF1601G thru SFF1608G Taiwan Semiconductor CREAT BY ART Isolated Glass Passivated Super Fast Rectifiers FEATURES - High efficiency, low VF. - High current capavility - High reliability - High surge current capability - Low power loss. - UL Recognized File # E-326243

Contextual Info: SFS1001G thru SFS1008G Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Low forward voltage drop - Ideal for automated placement - High current capability - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

HV110

Abstract: HV111 HV111K4
Contextual Info: HV111 INITIAL RELEASE Inrush Limiter/Circuit Breaker/Hotswap Controller IC No External Parts Required Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ No External Parts Required On Board 80V, 2A MOSFET No Rsense Needed ±8.0V to ±80V Input Voltage Range

6809e

Abstract: 68B09E ef68b09 6809E MPU CO2H 6809E+(MPU) 68A09E 6809E (MPU)
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX EF 3809E HMOS* 8-BIT MICROPROCESSOR UNIT MPU DESCRIPTION The EF 6809E is a revolutionary high-performance 8-bit microprocessor which supports modern programming techniques such as position indepen­ dence, reenlrancy, and modular programming.

Contextual Info: VARISCITE LTD. VAR-SOM-MX25 Datasheet FreescaleTM i.MX25x based System-on-Module Rev1.1A VAR I S CI TE LTD . VAR-SOM-MX25 Data Sheet 2010 Variscite Ltd. All rights Reserved. No part of this document may be photocopied, reproduced, stored in a retrieval system, or transmitted, in any form or by any means whatsoever, be they,

TSC 78L05

Abstract: pin diagram OF IC mt 8870 LM358 voltage comparator thermistor 10k ohm CURVE 2N3904 EB 545 BT 816 manual ammeter Block diagram thermistor 10k 25c ammeter calibration method comparator schematic
Contextual Info: Calibrating the MTA11200 System AN570 TM Calibrating the MTA11200 System INTRODUCTION Notes and Precautions: This application note analyzes the calibration algorithm from theoretical and numerical approaches. It includes two calibration procedures, including information on

MACH465

Abstract: 29f400 AMD CPLD Mach 1 to 5 AMD Graphics schematics 2308 rom AN-1003 corelis JTAG CONNECTOR C1996 programming 29F400 SCANPSC100F
Contextual Info: INTRODUCTION The Graphics Host Reference Design kit is produced by the staff at Hamilton Hallmark’s Technical Support Center in partnership with suppliers A reference design is a working design with all of the necessary elements in place to serve as an example of how a project might be approached Included are schematics application notes program code

TDA1308 application notes

Abstract: tda1308 TDA1308 application TDA 120t TDA1545A IEC134 TDA1308T
Contextual Info: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an S 08 or a DIPS plastic package. The

PC MOTHERBOARD foxconn sc242

Abstract: foxconn motherboard slot 1 foxconn sc242 Foxconn Precision Co slot AGP 124 pin
Contextual Info: 1 ITEM. ‘ 1 TREATMENT DESCRIPTION Q’TY MATERIAL HOUSING 1 THERMOPLASTIC, PPS REMARK MOLD, BROWN UL 94V-0 RATED CONTACT 2 NNN D - COPPER ALLOY 1 50u” MIN. NICKEL BASE PLATING (2) SEE REMARK FOR PLATING ON CONTACT AREA (3) 10Ou” MIN. TIN/LEAD PLATING

KM428C128

Abstract: 428C128 256X8 CMOS RAM 428-C KM428C128-6
Contextual Info: r PRELIMINARY v KM428C128 CMOS VIDEO RAM 1 28K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance - Speed Parameter RAM access tim e tRAc RAM access tim e (tcAc) RAM cycle tim e (tRc)

MGW12N120D

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

Contextual Info: NEC //PD4990A S E R IA L I/O C A L E N D A R & C LO C K C M O S LS I DESCRIPTION The ¿xPD4990AC, ¿tPD4990AG are a CMOS LS I c h ip developed to in p u t/o u tp u t calendar c lo c k deta seri­ a lly t o /f r o m th e m icro com puter. The crystal frequency is 3 2 .7 6 8 kH z and the data item s included are a bo ut tim e , m in u te , second, year, m o n th

Transistor motorola 418

Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247