Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TSCC 1100 Search Results

    TSCC 1100 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TPH1100CQ5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    74ACT11000D
    		Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    ADS1100A1IDBVTG4
    		Texas Instruments 16-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator & I2C 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
    TPS61100PWR
    		Texas Instruments Dual output converter (boost DC/DC + LDO) for single/dual cell applications 20-TSSOP -40 to 85 Visit Texas Instruments

    TSCC 1100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    eb 102H

    Abstract: STA002 CIRCUIT DIAGRAM OF Bc 547 547 B34 BC 545 Viterbi Decoder TQFP44 equivalent bc 517 211h st micro 21EH
    Contextual Info: STA002 STARMAN CHANNEL DECODER FRONT_END INTERFACE: IF input carrier frequency: f = 1.84 MHz Single internal 6 bit A/D converter QPSK demodulation Input symbol frequency: Fs = 1.84 Msymbols/s Digital Nyquist root filter: - roll-off value of 0.4 Digital carrier loop:


    Original     		STA002 eb 102H STA002 CIRCUIT DIAGRAM OF Bc 547 547 B34 BC 545 Viterbi Decoder TQFP44 equivalent bc 517 211h st micro 21EH PDF

    eb 102H

    Abstract: Transistor BC 547, CL 100 transistors BC 548 BC 558 bc 147 transistor bc 558 equivalent transistor Bc 540 transistor bc 564 20FH 547 B38 Diode KD 514
    Contextual Info: STA002 STARMAN CHANNEL DECODER FRONT_END INTERFACE: IF input carrier frequency: f = 1.84 MHz Single internal 6 bit A/D converter QPSK demodulation Input symbol frequency: Fs = 1.84 Msymbols/s Digital Nyquist root filter: - roll-off value of 0.4 Digital carrier loop:


    Original     		STA002 eb 102H Transistor BC 547, CL 100 transistors BC 548 BC 558 bc 147 transistor bc 558 equivalent transistor Bc 540 transistor bc 564 20FH 547 B38 Diode KD 514 PDF

    eb 102H

    Abstract: qpsk transmitter using microcontroller W41H sccf STA002 TQFP44 117H scc-f 547 B30
    Contextual Info: STA002  STARMAN CHANNEL DECODER FRONT_END INTERFACE: IF input carrier frequency: f = 1.84 MHz Single internal 6 bit A/D converter QPSK demodulation Input symbol frequency: Fs = 1.84 Msymbols/s Digital Nyquist root filter: - roll-off value of 0.4 Digital carrier loop:


    Original     		STA002 eb 102H qpsk transmitter using microcontroller W41H sccf STA002 TQFP44 117H scc-f 547 B30 PDF

    MSM5416262

    Contextual Info: E2L0018-17-Y1 ¡ Semiconductor MSM5416262 ¡ Semiconductor This version: Jan. 1998 MSM5416262 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416262 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0018-17-Y1 MSM5416262 144-Word 16-Bit MSM5416262 144-word 16-bit 512-word PDF

    MSM5416262

    Contextual Info: E2L0018-17-Y1 ¡ Semiconductor MSM5416262 ¡ Semiconductor This version: Jan. 1998 MSM5416262 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416262 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0018-17-Y1 MSM5416262 144-Word 16-Bit MSM5416262 144-word 16-bit 512-word PDF

    MSM5416272

    Contextual Info: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0020-17-Y1 MSM5416272 144-Word 16-Bit MSM5416272 144-word 16-bit 512-word PDF

    MSM54V16272

    Contextual Info: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0024-17-Y1 MSM54V16272 144-Word 16-Bit MSM54V16272 144-word 16-bit 512-word PDF

    MSM54V16272

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MSM54V16282

    Contextual Info: FEDS54V16282-05 ¡ Semiconductor MSM54V16282 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and


    Original     		FEDS54V16282-05 MSM54V16282 144-Word 16-Bit MSM54V16282 144-word 16-bit 512-word PDF

    MSM54V16272

    Contextual Info: FEDS54V16272-05 ¡ Semiconductor MSM54V16272 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and


    Original     		FEDS54V16272-05 MSM54V16272 144-Word 16-Bit MSM54V16272 144-word 16-bit 512-word PDF

    MSM54V16282

    Contextual Info: E2L0026-17-Y1 ¡ Semiconductor MSM54V16282 ¡ Semiconductor This version: Jan. 1998 MSM54V16282 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0026-17-Y1 MSM54V16282 144-Word 16-Bit MSM54V16282 144-word 16-bit 512-word PDF

    MSM5416282

    Contextual Info: Pr E2L0022-17-Y1 el im DESCRIPTION The MSM5416282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to


    Original     		E2L0022-17-Y1 MSM5416282 144-word 16-bit 512-word 16-bit MSM5416282 SSOP64-P-525-0 PDF

    MSM5416273

    Contextual Info: E2L0021-17-Y1 ¡ Semiconductor MSM5416273 ¡ Semiconductor This version: Jan. 1998 MSM5416273 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0021-17-Y1 MSM5416273 144-Word 16-Bit MSM5416273 144-word 16-bit 512-word PDF

    MSM5416272

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MSM5416282

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    MSM5416262

    Abstract: SDQ2
    Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		E2L0018-17-Y1 MSM5416262 144-Word 16-Bit MSM5416262 144-word 16-bit 512-word SDQ2 PDF

    MSM54V16282

    Contextual Info: E2L0026-17-Y1 ¡ Semiconductor MSM54V16282 ¡ Semiconductor This version: Jan. 1998 MSM54V16282 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0026-17-Y1 MSM54V16282 144-Word 16-Bit MSM54V16282 144-word 16-bit 512-word PDF

    MSM5416272

    Abstract: MA138
    Contextual Info: FEDS5416272-05 ¡ Semiconductor MSM5416272 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and


    Original     		FEDS5416272-05 MSM5416272 144-Word 16-Bit MSM5416272 144-word 16-bit 512-word MA138 PDF

    MSM54V16272

    Contextual Info: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0024-17-Y1 MSM54V16272 144-Word 16-Bit MSM54V16272 144-word 16-bit 512-word PDF

    MSM5416262

    Abstract: Dynamic RAM srt 0110
    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		MSM5416262 SSOP64-P-525-0 MSM5416262 Dynamic RAM srt 0110 PDF

    MSM54V16282

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    Dynamic RAM

    Abstract: MSM5416273
    Contextual Info: E2L0021-17-Y1 ¡ Semiconductor MSM5416273 ¡ Semiconductor This version: Jan. 1998 MSM5416273 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0021-17-Y1 MSM5416273 144-Word 16-Bit MSM5416273 144-word 16-bit 512-word Dynamic RAM PDF

    MSM5416282

    Contextual Info: Pr E2L0022-17-Y1 el im DESCRIPTION The MSM5416282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to


    Original     		E2L0022-17-Y1 MSM5416282 144-word 16-bit 512-word 16-bit MSM5416282 SSOP64-P-525-0 PDF

    SDQ11

    Abstract: MSM5416272
    Contextual Info: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit


    Original     		E2L0020-17-Y1 MSM5416272 144-Word 16-Bit MSM5416272 144-word 16-bit 512-word SDQ11 PDF