| TSHA520. |
|
Vishay Siliconix
|
GaAlAs Infrared Emitting Diodes in 5 mm (T-1 3/4)Package |
Original |
PDF
|
90.23KB |
6 |
| TSHA520 |
|
Vishay Telefunken
|
GaAlAs Infrared Emitting Diodes in f 5 mm (T-13/4) Package |
Original |
PDF
|
90.23KB |
6 |
| TSHA5200 |
|
Unknown
|
IR EMITTER |
Original |
PDF
|
121.63KB |
6 |
| TSHA5200 |
|
Vishay Intertechnology
|
GaAlAs Infrared Emitting Diodes in Diameter 5 mm (T- 1 3/4) Package |
Original |
PDF
|
126.54KB |
6 |
| TSHA5200 |
|
Vishay Intertechnology
|
IR EMITTER, 5MM, 875NM; Wavelength, typ:875nm; Power dissipation:210mW; Current, forward If:100mA; Voltage, Vf max:1.5V; Angle, viewing:24(degree); Case style:5mm / T1.75; Temperature, operating range:-55(degree C) to ?(degree C); RoHS Compliant: Yes |
Original |
PDF
|
104.27KB |
5 |
| TSHA5200 |
|
Vishay Telefunken
|
GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package |
Original |
PDF
|
90.22KB |
6 |
| TSHA5201 |
|
Unknown
|
IR EMITTER |
Original |
PDF
|
121.63KB |
6 |
| TSHA5201 |
|
Vishay Intertechnology
|
GaAlAs Infrared Emitting Diodes in diam 5 mm (T-1 3/4) Package |
Original |
PDF
|
90.22KB |
6 |
| TSHA5201 |
|
Vishay Intertechnology
|
IR EMITTER, 5MM 875NMIR EMITTER, 5MM 875NM; Radiant intensity:125mW/Sr; Angle, half:12(degree); Time, t on:0.6us; Time, t off:0.6us; Current, If av:100mA; Angle, full:2(degree); Case style:5mm T1.75 Tinted; Current, forward If:100mA; |
Original |
PDF
|
104.27KB |
5 |
| TSHA5202 |
|
Vishay Semiconductors
|
Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 1 |
Original |
PDF
|
|
5 |
| TSHA5202 |
|
Vishay Telefunken
|
GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package |
Original |
PDF
|
90.22KB |
6 |
| TSHA5203 |
|
Vishay Semiconductors
|
Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 1 |
Original |
PDF
|
|
5 |
| TSHA5203 |
|
Vishay Telefunken
|
GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package |
Original |
PDF
|
90.22KB |
6 |
