TSOP 0038 Search Results

sumitomo G700

Abstract: sumitomo epoxy 1076 0038 tsop ablebond Sumitomo 1076 8361J Compound c7025 Die Attach epoxy stamping sumitomo g700 type g700 mold compound
Contextual Info: 10/29/2004 PACKAGE RELIABILITY REPORT FOR 32 TSOP 8mm Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

sram card battery

Contextual Info: 1M Byte SRAM CARD KMCJ616512 512K x 16 / 1M x 8_ GENERAL DESCRIPTION July 1993 FEATURES The KM CJ616512 is the industry standard SRAM m em ory card and consists ot Samsung's advanced 32 TSOP 1M bits SRAM devices. • Fast Access Time : 150/200/250ns

Contextual Info: MITSUBISHI LSIS DRAM MODULE MH1V72TJ-6,-7 FAST PAGE MODE 75497472-BIT(1048576-WORD BY 72-BIT)DYNAMIC RAM DESCRIPTION The MH1V72TJ is 1048576 word x 72 bit dynamic RAM module. This consists of eighteen industry standard 1M x 4 dynamic RAMs in TSOP and two industry standard input

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4V72CTJ-6,-7 FAST PAGE MODE 301989888-BIT (4194304-WQRD BY 72-BIT) DYNAMIC RAM DESCRIPTION The MH4VT2CTJ is 4194304-word x 72-bit dynamic RAM module. This consists of eighteen industry standard 4M x 4 dynamic RAMs in TSOP and two industry standard input

Contextual Info: V7S0 VS464641641B.VS864641641B 4M,8Mx64-Bit SDRAM Module Preliminary Description The VS4646441641B and VS8646441641B are 4Mx64-bit and 8Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM (VG36641641BT), and each in a standard 54 pin TSOP package. The VS464641641B and VS864641641B

32Kword

Abstract: S29JL032 AM29DL320G S29JL032H S29PL032J WMF MARKING AMD K2
Contextual Info: Am29DL320G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL032H for TSOP packages and S29PL032J (for FBGA packages) supersede AM29DL320G as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical

Contextual Info: HYM76V8C735HGT8 8Mx72, 8Mx8 based, PC133 DESCRIPTION The H ynix HY M 76V 8C 735H G T6 Series are 8M x72bits ECC S ynchronous DRAM M odules. T he m odules are com posed o f nine 8M x8bits CM O S Synchronous DR AM s in 400m il 54pin TSOP-II package, one 2K bit EEPR O M in Spin TS S O P package on a 168pin

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

ES29DL320

Abstract: 3FE00
Contextual Info: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz

MSM66101

Abstract: MSM66G101VS QFJ68-P-S950-1 QFP64-P-1414-0 SDIP64-P-750-1 QFP5-28
Contextual Info: E2E1026-27-Y4 ¡ Semiconductor MSM66101 ¡ Semiconductor This version: MSM66101 Jan. 1998 Previous version: Nov. 1996 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66101 is a high performance microcontroller that employs OKI original nX-8/100 CPU

OO68

Contextual Info: E2E1026-27-Y4 O K I Semiconductor MSM66101 This version: Jan. 1998 Previous version: Nov. 1996 OLMS-66K Senes 16-Bit Microcontroller GENERAL DESCRIPTION The M SM 66101 is a. high perform ance m icrocontroller that employs OKI original n X -8 /1 00 CPU core. This chip includes a 16-bit CPU, ROM, RAM, 1 / O ports, m ultifunction 16-bit timers, 10bit A /D converter, serial 1 / O port, and pulse width m odulator PWM .

S29GL032N90TFI04

Abstract: s29gl032n90 S29JL032J s29jl032j70 S29GL032N90TF S29GL032N90TFI03 S29JL032J70TFI S29JL032J70TFI32 S29GL032N90TFI02 S29AL032D70TFI04
Contextual Info: Migrating from S29AL032D to S29GL032N and S29JL032J Application Note 1. Introduction The 32-Mbit S29AL032D NOR flash was made on the Spansion 200 nm floating gate NOR technology process node. Viable long term replacements for the S29AL032D are the S29GL032N, made on Spansion's

sm 0038 tsop

Abstract: sm 0038 PIN DIAGRAM sm 0038 receiver addressing mode in core i7
Contextual Info: E2E1027-27-Y4 This version: Jan. 1998 Previous version: Nov. 1996 O K I Semiconductor MSM66201/ 66P2 0 1/ 66207/ 66P207_ OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66201 / 66207 is a high perform ance microcontroller that employs OKI original n X -8/

MSM66207

Abstract: msm66201 msm66207 eta trw m 66207 MSM66201 SDIP64-P-750-1 OLMS-66K
Contextual Info: E2E1027-27-Y4 This version: Jan. 1998 MSM66201/66P201/66207/66P207 Previous version: Nov. 1996 ¡ Semiconductor MSM66201/66P201/66207/ 66P207 ¡ Semiconductor OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66201/66207 is a high performance microcontroller that employs OKI original nX-8/

TMS 3848

Abstract: tms 3848 nc MSM66101 MSM66G101VS QFP64 SDIP64 0026I 004AI rw 816 ai-259
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM66201

Abstract: MSM66207 MSM66P201 MSM66P207 QFP64 SDIP64 m 66207
Contextual Info: J2E1027-27-Y3 ¡ 電子デバイス 作成：1998年 1月 前回作成：1996年11月 MSM66201/66P201/66207/66P207 l MSM66201/66P201/66207/66P207 10ビットA/Dコンバータ内蔵16ビットマイクロコントローラ n 概要 MSM66201/66207は沖オリジナルのCPUコアnX-8/200を使用した、高性能16ビットマイクロコン

tms 3848 nc

Abstract: MSM66101 MSM66G101VS QFP64 SDIP64 12k8
Contextual Info: J2E1026-27-Y4 ¡ 電子デバイス 作成：1998年 1月 MSM66101 l 前回作成：1996年11月 MSM66101 10ビットA/Dコンバータ内蔵16ビットマイクロコントローラ n 概要 MSM66101は沖オリジナルのCPUコアnX-8/100を使用した、高性能16ビットマイクロコントロー

GL512S

Abstract: S29GL01GS S29GL128S GL128S S29GL512S S29GL256S GL256S S29GL-S JEP106T JESD68-01
Contextual Info: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet (Preliminary)

S29GL128S

Abstract: GL256S 256us S29GL256S GL512S SPANSION gl512s FLASH S29GL-S S29GL01GS S29GL-128S JESD68-01
Contextual Info: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O™

Contextual Info: TO SHIBA TC58F400/401 FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized

Contextual Info: TOSHIBA TC58F400F/401 F/FT-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 W ORDS x 8 BITS/262,144 W O RD S x16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized

Contextual Info: TOSHIBA TENTATIVE TC58F400/401 F/FT-90,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x8 BITS/262,144 WORDS x16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized

S29GL128S

Contextual Info: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O™

66207

Abstract: MSM66207 P2211 MSM66201 MSM66P201 MSM66P207 QFP64 SDIP64 m 66207 ai-259
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株