TSOP 1378 Search Results

CY62128VLL-55ZAI

Abstract: CY62128V CY62128VLL-55SC CY62128VLL-55ZI CY62128VLL-70SC
Contextual Info: 28V CY62128V 128K x 8 Static RAM Features automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V is available in the standard 450-mil-wide SOIC, 32-lead TSOP-I, 32-lead Reverse TSOP-1, and STSOP packages. • High Speed

st c037

Contextual Info: fax id: 1078 CY62128V Family 128K x 8 Static RAM three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide SOIC, TSOP, and STSOP packages.

512x 8

Abstract: CY62128VL-70ZI s34 diode CY62128V CY62128V18 CY62128V25 CY62128VLL70ZAI
Contextual Info: fax id: 1078 Family CY62128V Family 128K x 8 Static RAM Features three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide SOIC, TSOP, and STSOP packages.

A12C

Abstract: A14C A15C CY62128V CY62128V18 CY62128V25
Contextual Info: fax id: 1 078 CY62128V Family 128K x 8 Static RAM Features three -state drivers. T hese devices have an au tom atic pow er-dow n feature, reducing the pow er con sum p tion by ove r 99% w h en de selected. T he C Y 6 21 28V fam ily is available in the stan dard 4 5 0 -m il-w id e SOIC, TSOP, and S T S O P packages.

TSOP 1378

Abstract: 62C1024 IS62LV1024L IS62LV1024LL
Contextual Info: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 35, 45, 50, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

Contextual Info: IS62LV1024L IS62LV1024LL — 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM a d v a n c e in f o r m a t io n FEBRUARY 1997 FEATURES DESCRIPTION • Access times of 35, 45, 55, and 70 ns T he I S S I IS 62LV 1024L and IS62LV 1024LL are low pow er and low Vcc, 1 31,072-word by 8-bit C M O S static RAM s. T hey

TSOP 1378

Abstract: 45ti 62C1024 IS62LV1024L IS62LV1024LL IS62LV1024LL-70TI
Contextual Info: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 35, 45, 50, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

IS62LV1024

Contextual Info: IS62LV1024L IS62LV1024LL m â 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

TSOP 1378

Abstract: 62C1024
Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y AUGUST 1997 FEATURES DESCRIPTION • A c c e s s tim e s of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

chn 45L

Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 FEATURES DESCRIPTION • A c c e s s tim e s o f 3 5 , 4 5 , 5 0 , a n d 7 0 ns • L o w a c tiv e p o w e r: 6 0 m W ty p ic a l • L o w s ta n d b y p o w e r: 15 fiW (ty p ic a l) C M O S

IS62LV1024L

Abstract: IS62LV1024LL TSOP 1378
Contextual Info: IS62LV1024L IS62LV1024LL 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 DESCRIPTION FEATURES • A c c e s s tim e s o f 3 5 , 4 5 , 5 0 , a n d 7 0 ns • L o w a c tiv e p o w e r: 6 0 m W ty p ic a l • L o w s ta n d b y p o w e r: 15

PK131

Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

CY62128VL-70ZI

Abstract: CY62128V CY62128V18 CY62128V25 ZA32
Contextual Info: amily CY62128V Family 128K x 8 Static RAM Features LOW Output Enable OE and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide

CY62128V

Abstract: CY62128V18 CY62128V25 CY62128V18LL-200ZC
Contextual Info: 28V Family CY62128V Family 128K x 8 Static RAM Features LOW Output Enable OE and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide

Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

IS62LV1024-45Q

Abstract: IS62LV1024-55Q 12130
Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

IS62LV1024-35Q

Abstract: IS62LV1024-35T IS62LV1024-45Q IS62LV1024-45T IS62LV1024-55Q IS62LV1024-55T TSOP 1378
Contextual Info: ISSI ISSI IS62LV1024 IS62LV1024 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 100 mW typical • Low standby power: 50 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2012 DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are FEATURES • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words

TSOP 1378

Abstract: IS62LV1024LL-70T IS62LV1024L IS62LV1024LL IS62LV1024LL-70Q
Contextual Info: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 70 ns and 100 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

DBLL

Abstract: IS62WV5128DBLL-45HLI IS62WV5128DBLL-45BLI IS62WV5128DALL-55HLI
Contextual Info: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, FEBRUARY 2012 ULTRA LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words

Contextual Info: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, MARCH 2011 ULTRA LOW POWER CMOS STATIC RAM ADVANCED INFORMATION FEATURES DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words

IS62LV256

Abstract: IS62LV256-45J IS62LV256-45T IS62LV256-45U IS62LV256-70RT IS62LV256-70T IS62LV256-70U
Contextual Info: ISSI IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM DECEMBER 2002 FEATURES DESCRIPTION • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs

Contextual Info: ISSI IS62LV1024LL 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM OCTOBER 2000 FEATURES DESCRIPTION • Access times of 45, 55, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

TSOP 1378

Abstract: IS62LV256 IS62LV256-45J IS62LV256-45N IS62LV256-45T IS62LV256-45U IS62LV256-70J IS62LV256-70N IS62LV256-70T
Contextual Info: ISSI ISSI IS62LV256 IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM FEATURES ® JULY 1996 DESCRIPTION The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's • Access time: 45, 70, 100 ns • Low active power: 70 mW