TSOP 3123 Search Results

dh 321

Abstract: AS4SD4M16 dh321 max 32321 DJ7021-6.3-21
Contextual Info: SDRAM AS4SD4M16 Austin Semiconductor, Inc. 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK

Contextual Info: AT27C040 Features • • Fast Read Access Time - 80 ns Low Power CMOS Operation 100 p-A max. Standby 25 mA max. Active at 5 MHz Wide Selection of JEDEC Standard Packages 32-Lead 600-mil PDIP and Cerdip 32-Pad PLCC and LCC 32-Lead 450-mil SOIC SOP 32-Lead TSOP

AT27C040-20DC

Abstract: AT27C040-12LC AT27C040-20 80-LI T27C040
Contextual Info: AT27C040 Features • • Fast Read Access Time - 80 ns Low Power CMOS Operation 100 |xA max. Standby 25 mA max. Active at 5 MHz Wide Selection of JEDEC Standard Packages 32-Lead 600-mil PDIP and Cerdip 32-Pad PLCC and LCC 32-Lead 450-mil SOiC SOP 32-Lead TSOP

AT270040-1ODI

Abstract: AT27C040-20DC
Contextual Info: AT27C040 Features • • • • • • • • • • Fast Read Access Time - 80 ns Low Power CMOS Operation 100 |iA max. Standby 25 mA max. Active at 5 MHz Wide Selection of JEDEC Standard Packages 32-Lead 600-mil PDIP and Cerdip 32-Pad PLCC and LCC 32-Lead TSOP

bt 2323 m decoder

Abstract: dh321 max 32321 dh 321 AS4SD4M16 432321 54211 212109
Contextual Info: SDRAM AS4SD4M16 Austin Semiconductor, Inc. 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES • • • • • • • • • • • • • OPTIONS • • • • 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C

dh321

Abstract: dh 321 max 32321 m6 90 v-0 sdram 4 bank 4096 16 AS4SD4M16 7432 truth table 212109 876-1432 313212
Contextual Info: SDRAM AS4SD4M16 Austin Semiconductor, Inc. 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES • • • • • • • • • • • • • OPTIONS • • • • 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C

Contextual Info: SDRAM AS4SD4M16 Austin Semiconductor, Inc. 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES • • • • • • • • • • • • • OPTIONS • • • • 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C

dh321

Abstract: max 32321 dh 321 CM-H2121 bt 2323 m decoder AS4SD4M16 54211 212109 din 5482
Contextual Info: SDRAM AS4SD4M16 Austin Semiconductor, Inc. 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES • • • • • • • • • • • • • OPTIONS • • • • 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C

Contextual Info: CY62147EV30 MoBL Automotive 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

Contextual Info: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,

Contextual Info: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,

Contextual Info: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,

Contextual Info: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power

Contextual Info: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,

tsop 3123

Abstract: 27LV040A AT27C040 AT27LV040A AT27LV040A-12JC AT27LV040A-12JI AT27LV040A-12TC AT27LV040A-12TI AT27LV040A-15JC AT27LV040A-15TC
Contextual Info: AT27LV040A Features • • • • • • • • • • Fast Read Access Time - 120 ns Dual Voltage Range Operation Low Voltage Power Supply Range, 3.0V to 3.6V or Standard 5V ± 10% Supply Range Compatible With JEDEC Standard AT27C040 Low Power 3.3-volt CMOS Operation

Contextual Info: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description Very high speed: 45 ns Temperature ranges ❐ Industrial: –40 °C to +85 °C • Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62147DV30

Contextual Info: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

Contextual Info: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active

Contextual Info: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active

Contextual Info: AT27LV040A Features • • • • • • • • • • Fast Read Access Time -1 2 0 ns Dual Voltage Range Operation Low Voltage Power Supply Range, 3.0V to 3.6V or Standard 5V ± 10% Supply Range Compatible With JEDEC Standard AT27C040 Low Power 3.3-volt CMOS Operation

Contextual Info: CY62147EV30 MoBL Automotive 4-Mbit 256K x 16 Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE

Contextual Info: CY62147EV30 MoBL Automotive 4-Mbit 256K x 16 Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE

1A14A

Abstract: T28F200 28F400-T
Contextual Info: in te l PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28 F 4 0 0 B V -T /B , 28 F 4 0 0 C V -T /B , 2 8 F 0 0 4 B V -T /B 2 8 F 4 0 0 C E -T /B , 2 8 F 0 0 4 B E -T /B Intel SmartVoltage Technology — 5V or 12V Program/Erase

ball grid array image

Abstract: CY62147DV30 CY62147EV30 CY62147EV30LL
Contextual Info: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power