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    TSOP 4021 Search Results

    TSOP 4021 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BU16-4021R5BL Coilcraft Inc Single Phase EMI Filter, ROHS COMPLIANT PACKAGE-4 Visit Coilcraft Inc
    CD4021BDMSR Renesas Electronics Corporation CMOS 8-Stage Static Shift Register Visit Renesas Electronics Corporation
    844021BG-01LFT Renesas Electronics Corporation FemtoClock® Crystal-to-LVDS Clock Generator Visit Renesas Electronics Corporation
    844021BGI-01LF Renesas Electronics Corporation FemtoClock® Crystal-to-LVDS Clock Generator Visit Renesas Electronics Corporation
    ISL24021IRT065Z-T7A Renesas Electronics Corporation 1A Rail-to-Rail Input-Output Operational Amplifier Visit Renesas Electronics Corporation

    TSOP 4021 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    q1257

    Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
    Text: 2002791-D-RAMhoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAMhoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed


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    PDF 2002791-D-RAM hoch17 DDR400 PC3200) B112-H6731-G10-X-7600 q1257 Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66

    512m pc133 SDRAM DIMM

    Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
    Text: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.


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    PDF DDR400 PC3200) B166-H8399-X-X-7600 512m pc133 SDRAM DIMM TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash

    ddr2 laptop pin

    Abstract: DDR3 Infineon microDIMM 214 DDR3 miniDIMM JEDEC DDR2 DIMM 240 pinout DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR333
    Text: Product Information 2004 MEMORY DRAM Modules Including DDR2 Modules w w w. i n f i n e o n . c o m / m e m o r y Never stop thinking. Introduction One-Stop-Shopping for DRAM Modules J U N E 2 0 0 4 . As a leading memory products supplier, we offer an extensive range of leading-edge DRAM modules.


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    PDF B166-H8412-X-X-7600 ddr2 laptop pin DDR3 Infineon microDIMM 214 DDR3 miniDIMM JEDEC DDR2 DIMM 240 pinout DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR333

    LEAPER-3

    Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
    Text: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.


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    PDF PIC16C52/54/54A PIC16C55/56/57/57A/58A PIC12C508/509 PIC16C61 PIC16C620/621/622 PIC16C71/710 PIC16C62/63/64/65 PICC16C72/73/74/74A PIC16C83/84 PIC17C42/42A/43/44 LEAPER-3 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


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    PDF 74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


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    PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY

    plc siemens

    Abstract: ding dong siemens modules GR 70 4x4Mx16 componentes eletronicos 333
    Text: Chip On Board Innovation in Memory Module Technology Initiative for you. Siemens Semiconductors. CHIP ON BOARD CHIP ON BOARD Innovation in memory module technology. Shorter response cycles, more flexibility and logistical challenges lead to new product concepts


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    PDF de/Semiconductors/products/35/352 B191-H7152-G1-X-7600 plc siemens ding dong siemens modules GR 70 4x4Mx16 componentes eletronicos 333

    HYE18L256160BF-7

    Abstract: intech tsop 4021 Fbga54
    Text: Infineon Specialty DRAMs Mobile-RAM w w w. i n f i n e o n . c o m / m e m o r y / Mo b i l e - R A M Never stop thinking. Mobile-RAM – Extended Battery Lifetime for Handhelds A S O N E O F T H E W O R L D ’ S T O P T H R E E memory companies, Infineon offers a wide portfolio of


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    PDF B166-H8394-X-X-7600 HYE18L256160BF-7 intech tsop 4021 Fbga54

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


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    PDF element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186

    Untitled

    Abstract: No abstract text available
    Text: P I H i@ y T 1F [ ^ 1 ¥ D 0 in te l 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at


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    PDF 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B Susp148 AP-604 28F002/200BX-T/B 28F002/200BL-T/B 28F004/400BL-T/B 28F004/400BX-T/B AB-57

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY in te l 8-MBIT 512K X 1 6 ,1024K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B Extended Temperature Operation 40°C to +85°C Intel SmartVoltage Technology — 5V or 12V Program/Erase


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    PDF 1024K 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B 28F002/400BX- 28F002/400BL-T/B AP-604 AP-617

    Untitled

    Abstract: No abstract text available
    Text: iir tls J W W C T [p ^l¥0i 2-MBIT (128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at


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    PDF 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B 28F004/400B 28F002/200B USA/1294/8K/MS 4fl2fal75

    intel e28f

    Abstract: 28f400 BYTE PROGRAM
    Text: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at


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    PDF 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B AP-604 28F002/200BX-T/B 28F002/200BL-T/B 28F004/400BL-T/B 28F004/400BX-T/B AP-363 intel e28f 28f400 BYTE PROGRAM

    84256A

    Abstract: No abstract text available
    Text: November 1992 Edition 3.1 FUJITSU DATA SHEET MB84256A-70/-70L/-70LL/-10/-10L/-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu M B84256A is a 3 2 ,76 8 -w o rd by 8 -b it static random access memory fabricated


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    PDF MB84256A-70/-70L/-70LL/-10/-10L/-10LL 256K-BIT B84256A DIP-28P-M02 84256A

    Untitled

    Abstract: No abstract text available
    Text: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time


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    PDF 28F008SA 64-Kbyte

    Untitled

    Abstract: No abstract text available
    Text: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time ■ Extended Cycling Capability — 100,000 Block Erase Cycles ■ Automated Byte Write and Block Erase ■ Low Power Consumption


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    PDF 28F002BC 16-KB 96-KB 128-KB AP-610 28F002/200BX- 28F004/400BX- 28F002/200BV-T/B2-M 28F004/400B

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW BYTE-WIDE Smart3 FlashFile™ MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — Smart3™ Flash: 2.7V Read-Only or 3.3V Vcc and 3.3V or 12V VPP


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    PDF 28F004S3, 28F008S3, 28F016S3 40-Lead 44-Lead 64-Kbyte Sixtl75 D17Db41

    Untitled

    Abstract: No abstract text available
    Text: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp


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    PDF 28F016XS 16-MBIT 28F008SA 128-Kbyte 56-Lead

    intel pa28f400

    Abstract: intel 28F400 28F400 29053 intel flash A0513 28f400 interface intel 28f800 A76T intel AP-569
    Text: M f ä ilL D G M Ä Ö S Y in le l 4-MBIT (256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F 004B E -T /B Intel Sm artVoltage Technology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read Operation


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    PDF 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F004BE-T/B x8/x16-Selectable 28F400 32-bit BV-60 TBV-80 intel pa28f400 intel 28F400 29053 intel flash A0513 28f400 interface intel 28f800 A76T intel AP-569

    TE28F160B3B120

    Abstract: 29058
    Text: intei PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V V pp Fast Programming ■ 2.7V or 1.8V I/O Option


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    PDF 16-MBIT 28F400B3, 28F800B3, 28F160B3 48-Ball 48-Lead 4fl2bl75 1997Flash AP-617 TE28F160B3B120 29058

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F016XS 16-MBIT 1-MBIT x 16, 2-MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective 0-W ait-State Perform ance up to 33 MHz l Backward Compatible with 28F016SA/SV, 28F008SA Command-Set Sm artVoltage Technology — User-Selectable 3.3V or 5V V qc — User-Selectable 5V or 12V Vpp


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    PDF 28F016XS 16-MBIT 28F016SA/SV, 28F008SA 128-KByte Intel486â AP-600, 28F016XS

    Untitled

    Abstract: No abstract text available
    Text: in te i 82930A UNIVERSAL SERIAL BUS MICROCONTROLLER • Complete Universal Serial Bus Specification compatibility — Supports Isochronous and Non-isochronous data ■ Power-saving Idle and Powerdown Modes ■ User-selectable Configurations — External Wait State


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    PDF 2930A

    MO5T

    Abstract: 2TOSG-117 272797 8293 wsa0
    Text: [F ^ @ [D y T Ì P ^ i ^ O i W in te i 82930A UNIVERSAL SERIAL BUS MICROCONTROLLER • Complete Universal Serial Bus Specification compatibility — Supports Isochronous and Non-isochronous data I Power-saving Idle and Powerdown Modes I User-selectable Configurations


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    PDF 2930A Three16byte MO5T 2TOSG-117 272797 8293 wsa0