TSOP 903 Search Results

Contextual Info: DENSE-PAC 1280 Megabit CMOS DRAM MICROSYSTEMS DPD32MS40PKW5 PRELIMINARY D ESCRIPTIO N : The DPD32MS40PKW5 is the 32 Meg x 40 Dynamic RAM module in the family of S u p e r S IM M modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks,

plx 9030

Abstract: FOOTPRINTS CONNECTOR ssop-4 footprint plcc 208 plx 9030 176-pin pqfp PLCC pin configuration FOOTPRINTS CONNECTOR 2 PIN 14 pin plcc socket footprint soic 20 pci connector footprint plx 9030 data sheet
Contextual Info: PCI 9030RDK–LITE PCI SMARTarget Rapid Development Kit Features •A PCI v2.2 prototype adapter board design based on the PLX PCI 9030 SMARTarget I/O Accelerator ■ Surface mount footprints on the board support industry standard embedded CPUs, DSPs, FPGAs, CPLDs and

plx 9030

Abstract: 9030RDK-LITE plx 9030 data sheet 20-PIN 44-PIN 48-PIN 54-PIN 9030-AA60BI FOOTPRINTS CONNECTOR 2 PIN TSOP 54 PIN
Contextual Info: CompactPCI 9030RDK-LITE CompactPCI SMARTarget Rapid Development Kit Features • PICMG 2.0 r2.1 Compact PCI Compliant Rapid Development Kit based on the PLX PCI 9030 SMARTarget I/O Accelerator ■ CompactPCI Hot Swap Ready 3U or 6U installable ■ Surface

BIOS 29EE020

Abstract: 29ee020 29EE010 "silicon storage technology" superflash superflash sst bios 28sf040 SST28SF040 SST29EE512 SST29LE010
Contextual Info: 1 2 3 4 Silicon Storage Technology, Inc. 5 6 7 Flash Memory Data Book 1998 8 9 10 11 12 13 14 Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086 15 Tel: 408 735-9110 Fax: (408) 735-9036 16 Web site: www.ssti.com or www.SuperFlash.com

M25P08

Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Contextual Info: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010

Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.

Hitachi DSA002746

Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.

HM628512B

Abstract: HM628512BLFP-5 HM628512BLFP-5SL HM628512BLFP-7 HM628512BLFP-7SL HM628512BLP-5 HM628512BLP-5SL HM628512BLP-7 HM628512BLP-7SL Hitachi DSA00197
Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903 (Z) Preliminary Rev. 0.0 Apr. 24, 1998 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The

Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( A m Hi-CMOS process technology.

70241k

Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P
Contextual Info: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054

HM628512B

Abstract: HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-5SL HM628512BLP-5UL HM628512BLP-7 HM628512BLP-7SL HM628512BLP-7UL
Contextual Info: a HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The

c9013

Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Contextual Info: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.

Hitachi DSA00101

Abstract: HM628512B HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-5SL HM628512BLP-5UL HM628512BLP-7 HM628512BLP-7SL HM628512BLP-7UL
Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The

HM628512BLP-5SL

Abstract: A17a DP-32 HM628512B HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-7 HM628512BLP-7SL HM628512BLTT7
Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.

mtp 27SF020

Abstract: 27SF020 27VF020 32-PIN SST27SF020 SST27VF020 SST27XF020 27SF020 70
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020, SST27VF020 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF020 • 2.7-Volt Read Operation for 27VF020 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention

27sf010

Abstract: 32-PIN SST27SF010 SST27VF010 27SF01070 27SF010-70
Contextual Info: 1 Megabit 128K x 8 SuperFlash MTP SST27SF010, SST27VF010 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF010 • 2.7-Volt Read Operation for 27VF010 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention

Contextual Info: HN58V1001 Series Preliminary 131,072-word x 8-bit Electrically Erasable and Programmable CMOS ROM The Hitachi HN58V1001 is a electically erasable and p rogram m able EEPROM organized as 131072-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability,

TMS87C510

Abstract: TL16CFM405 sn10448 TL16CFM405PH tl16cfm504pjm tms87c110 tl16cfm TCM78808FN TL16CRK600 tms29f256fm
Contextual Info: TEXAS INSTRUMENTS Informational Change of Moisture Sensitivity Caution Labels to Comply with EIA/JEP113-A Standard January 21, 1997 Abstract Texas Instruments is changing the moisture sensitivity caution labels used on all dry packaged product to comply with the industry standard EIA/JEP113-A. The new labels allow product factory

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

oasis

Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Prelim inary Specifications FEATURES: • • 5.0V Read Operation (4.5V to 5.5V) • Does Not Require UV Source Chip Erase Time: 100 ms • TTL I/O Compatibility Low Power Consumption • JEDEC Standard Byte-wide EPROM Pinouts

EZ 923

Abstract: V907
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT jjPD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800L, 4216800L, 42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The

27SF020

Abstract: mtp 27SF020 27VF020 SST27XF020 27SF020 70 32-PIN SST27SF020 SST27VF020 eeprom 27sf020 12v/mtp 27SF020
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020, SST27VF020 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF020 • 2.7-Volt Read Operation for 27VF020 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention

27SF010

Abstract: 27sf010-70 32-PIN SST27SF010 SST27VF010 27VF010
Contextual Info: 1 Megabit 128K x 8 SuperFlash MTP SST27SF010, SST27VF010 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF010 • 2.7-Volt Read Operation for 27VF010 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention