TSOP6 MARKING DC Search Results

Contextual Info: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: WTM8205 Dual N-Channel Enhancement Mode MOSFET 2 DRAIN P b Lead Pb -Free DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE 4 GATE Features: 1 SOURCE * Super High Density Cell Design for Extremely Low R DS(ON) * Exceptional On-Resistance and Maximum DC Current Capability

Contextual Info: PD - 97729 IRLTS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V D 1 6 32 mΩ D 2 5 D 55 mΩ G 3 4 S 12 nC -6.9 A RDS on max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET

Contextual Info: Si3474DV Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A)a 0.126 at VGS = 10 V 3.8 0.147 at VGS = 6 V 3.5 0.189 at VGS = 4.5 V 3.1 Qg (Typ.) 2.9 nC APPLICATIONS • DC/DC Converters / Boost Converters

AN1001

Abstract: IRF5801 TSOP 48 thermal resistance junction to case
Contextual Info: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRF5800

Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
Contextual Info: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

AN1001

Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Contextual Info: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

TSOP-66

Abstract: TSOP-6 Marking
Contextual Info: WIMN10 Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 100m AMPERES P b Lead Pb -Free 80 VOLTS Features: * Ultra High Speed Switching * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation

STN8205

Abstract: TSOP-6 Marking Dual N STN8205D TSOP 6 marking 52 STN82 TSOP-6 MARKING 100
Contextual Info: STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: KS05V4 Low Capacitance Integrated ESD Protection Array Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TheKS05V4 is designed to protect I/Os being sensitive concerning capacitive load, such as USB2.0,Ethernet, DVI etc. from destruction

Contextual Info: KS05V4 Low Capacitance Integrated ESD Protection Array Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TheKS05V4 is designed to protect I/Os being sensitive concerning capacitive load, such as USB2.0,Ethernet, DVI etc. from destruction

TSOP 54 land pattern

Abstract: AO6405 TSOP-6 Marking land pattern for TSOP 2 86
Contextual Info: Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications.

AO6408

Contextual Info: March 2003 AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6408 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for

DIODE 30V TSOP-6

Abstract: TSOP 48 thermal resistance tsop6 marking 345 AO6402 land pattern tsop 6
Contextual Info: Nov 2002 AO6402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6402 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device may be used as a load switch or in PWM applications. VDS (V) = 30V

Contextual Info: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.133 at VGS = - 10 V - 2.2 0.245 at VGS = - 4.5 V - 1.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si3457-b

Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6

TSOP 6 marking 52

Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition

"Frequency Generators"

Abstract: NB2879A NB2879ASNR2 NB2879ASNR2G
Contextual Info: NB2879A Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent

NB2872A

Abstract: NB2872ASNR2 NB2872ASNR2G
Contextual Info: NB2872A Low Power, Reduced EMI Clock Synthesizer The NB2872A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2872A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent

SI3865DDV

Abstract: IK pressure gauge si3865
Contextual Info: New Product Si3865DDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VIN VDS2 (V) 1.5 to 12 RDS(on) () ID (A) 0.054 at VIN = 4.5 V 3.9 0.077 at VIN = 2.5 V 3.2 0.106 at VIN = 1.8 V 2.8 0.165 at VIN = 1.5 V 2.2 DESCRIPTION The Si3865DDV includes a p- and n-channel MOSFET in a

qm3003

Contextual Info: MA3003V10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3003V is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

PBSS4350D

Abstract: PBSS5350D
Contextual Info: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

IRFTS9342

Abstract: irfts9342tr IRLML9301TR irlml9301trpbf IRFTS9342TRPBF
Contextual Info: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V