TSOPII44 Search Results

Contextual Info: TSOPII44-P-400-0.80H 44 Unit : mm 23

TSOPII-44

Contextual Info: TSOPII44/40-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

Contextual Info: TSOPII44-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

Contextual Info: TSOPII44-P-400-0.80-1K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

MSM5416258A

Abstract: msm5416258
Contextual Info: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate

s2mX

Contextual Info: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation • Optimized for byte-write non-parity or ECC applications

3tr5

Abstract: active suspension MSM56V16800D MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15 wf vqc 10 d a6 56V16800
Contextual Info: O K I Semiconductor M SM 56V16800D/DH E2G1047-17-94 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM D E SCRIPTIO N The M SM 56V16800D/DH is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

MSM534032E

Abstract: 44-PIN
Contextual Info: Semiconductor MSM534032E 262,144-Word x 16-Bit or 524,288-Word x 8-Bit MASKROM DESCRIPTION The OKI MSM534032E is a high-speed CMOS Mask ROM that can electrically switch between 262,144-word x 16-bit and 524,288-word x 8-bit configurations. The MSM534032E operates on a single 3.0V or 3.3V power supply but offers the same fast access times as

DIN11

Abstract: MSM548332
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

DIP42-P-600-2

Abstract: MR53V1602J MR53V1602J-XXMA MR53V1602J-XXRA MR53V1602J-XXTP
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

General Electric C 524 k

Abstract: MR53V8052J-XXRA DIP42-P-600-2 MR53V8052J MR53V8052J-XXMA MR53V8052J-XXTP
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

TDS1012

Abstract: MSM521218
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

DIP42-P-600-2

Abstract: MR53V8002J MR53V8002J-XXMA MR53V8002J-XXRA MR53V8002J-XXTP
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM548263

Abstract: SOJ40 TFSC
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: TOSHIBA TENTATIVE TC55V8512J/FT-12,-15.-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-W O R D BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288

MR27V3202E

Abstract: 00FF MR27V3202EMA MR27V3202ETP
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM548262

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

PC66-222-920

Abstract: v2200 TSOP44
Contextual Info: 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 168 pin unbuffered DIMM Modules • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

SEM t11

Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command

UC62LS4096

Abstract: U-Chip Technology
Contextual Info: Low Power CMOS SRAM 256K X 16 UC62LS4096 -20/-25 Description Features: • Vcc operation voltage : 3.0 V~ 3.6V • Low power consumption : 20mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V

HYS64V4120GU-10

Abstract: HYS72V4120GU-10
Contextual Info: 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120GU-10 HYS72V4120GU-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 2 bank 4M x 64, 4M x 72 organisation

HYS64V2100G

Contextual Info: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2100G C U-10 HYS72V2100G(C)U-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 1 bank 2M x 64, 2M x 72 organisation

MSM5416125A

Contextual Info: E2L0049-17-Y1 ¡ Semiconductor MSM5416125A ¡ Semiconductor This version: Jan. 1998 MSM5416125A Previous version: Dec. 1996 131,072-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The OKI MSM5416125A is a 128K-word ¥ 16-bit dynamic RAM fabricated in OKI's CMOS silicon

MSM521218

Contextual Info: J2I0029-17-Y1 ¡ 電子デバイス 作成：1998年 1月 MSM521218 ● 前回作成：1996年 8月 MSM521218 暫定 65,536-Wordx18-Bit CMOS STATIC RAM n 概要 単一電源で動