TSR03 Search Results

Contextual Info: Flexibility & Innovation …. DS0159_01 19/03/01 DATA SHEET Part Number 315.00 MHz SAW Resonator TSR0315-L1 SPECIFICATION PACKAGE F-11 PRODUCT FEATURES : Ø HIGH STABILITY Ø LOW LOSS Ø SMALL SIZE CONTACT : TEMEX S.A.W. PUITS-GODET 8, 2000 NEUCHÂTEL SWITZERLAND

Contextual Info: Flexibility & Innovation …. DS0160_01 19/03/01 DATA SHEET Part Number 315.00 MHz SAW Resonator TSR0315-L2 SPECIFICATION PACKAGE 5.0X5.0 MM SMD PRODUCT FEATURES : Ø HIGH STABILITY Ø LOW LOSS Ø SMALL SMD PACKAGE CONTACT : TEMEX S.A.W. PUITS-GODET 8, 2000 NEUCHÂTEL

Contextual Info: Flexibility & Innovation …. DS0212_01 16.05.01 Part Number 388.95 MHz SAW Resonator TSR0388-L1 SPECIFICATION PRODUCT FEATURES : TA61 Cxxx Ø HIGH STABILITY Ø LOW LOSS Where xxx is lot number Ø SMALL SIZE TEMEX S.A.W. CONTACT : PUITS-GODET 8, 2000 NEUCHÂTEL

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

AM28F020

Contextual Info: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: PRELIMINARY AMDH Am29LV001 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: AMDB Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and

Am26F020

Contextual Info: FINAL Am28F020 Advanced 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory n j ïie ls DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption ■ ■ Compatible with JEDEC-standard byte-wide

Contextual Info: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

am29f040b

Contextual Info: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

AM29F01OA-45

Contextual Info: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically

Contextual Info: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

IC 555 architecture

Contextual Info: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■

Am29F010 Rev. A

Contextual Info: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

Contextual Info: User’s Manual The sales of these products are limited for China, Hong Kong, and India. R7F0C008A/B/F, R7F0C009A/B/F 16 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications,

Contextual Info: User’s Manual The sales of these products are limited for China, Hong Kong, and India. R7F0C01072DNP, 16 R7F0C010B2DFP-C User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications,

Contextual Info: ADVANCE INFORMATION AMD Am29LV010B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

AM29F040B

Contextual Info: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology

Contextual Info: ADVANCE INFORMATION Am29LV104B 4 Megabit 512 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Product Selector Guide

Contextual Info: ADVANCE INFORMATION Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

AM29F010

Abstract: AM29F01055 Am2F010
Contextual Info: FINAL Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ High performance

nec f0123h

Abstract: F004C f0103h nec f0114h nec 44 pin LQFP f0114h CSI00 F0144H FFF99H NEC. F0114H PD78F1178
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT 78K0R/KH3 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The 78K0R/KH3 is a 16-bit single-chip microcontroller that incorporates a 78K0R core. This is an All Flash microcontroller, which has a single power supply flash memory with a self programming

am29f040b

Abstract: Publication# 19957 Am29F040
Contextual Info: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology