TSSOP8 THERMAL PERFORMANCE Search Results

HL04

Abstract: HL-04 HEL04 KEL04 E104 MC100EL04 MC10EL04
Contextual Info: MC10EL04, MC100EL04 5V ECL 2-Input AND/NAND The MC10EL/100EL04 is a 2‐input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E104, the EL04 is ideally suited for those

Contextual Info: MC10EL04, MC100EL04 5V ECL 2-Input AND/NAND The MC10EL/100EL04 is a 2‐input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E104, the EL04 is ideally suited for those

HEP08

Abstract: HP08 MC100EP08 MC10EP08 kep08
Contextual Info: MC10EP08, MC100EP08 3.3V / 5V ECL 2-Input Differential XOR/XNOR Description The MC10/100EP08 is a differential XOR/XNOR gate. The EP08 is ideal for applications requiring the fastest AC performance available. The 100 Series contains temperature compensation.

KEL58

Abstract: HL58 mc10el58 SPICE model MC10EL58D BR1011 HEL58 E158 MC100EL58 MC10EL58 kl58
Contextual Info: MC10EL58, MC100EL58 5V ECL 2:1 Multiplexer The MC10EL/100EL58 is a 2:1 multiplexer. The device is functionally equivalent to the E158 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E158, the EL58 is ideally suited for those

HEL11

Abstract: KEL11 KEL11 XA MC100EL11 MC10EL11
Contextual Info: MC10EL11, MC100EL11 5V ECL 1:2 Differential Fanout Buffer The MC10EL/100EL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. The within-device skew and propagation delay is

HEL16

Abstract: kel16 E116 MC100EL16 MC10EL16
Contextual Info: MC10EL16, MC100EL16 5V ECL Differential Receiver The MC10EL/100EL16 is a differential receiver. The device is functionally equivalent to the E116 device with higher performance capabilities. With output transition times significantly faster than the E116,

MC100

Abstract: MC100EP05 MC100LVEP05
Contextual Info: MC100LVEP05 2.5V / 3.3V ECL 2-Input Differential AND/NAND Description The MC100LVEP05 is a 2-input differential AND/NAND gate. The MC100LVEP05 is the low voltage version of the MC100EP05 and is functionally equivalent to the EL05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the

LM75ADP

Abstract: SE95 Temperature calibration AD1021A SE97 HVSON8 philips master replacement guide AD1021 ADM1032AR LM75AD tcn75-3.3mua
Contextual Info: I2C-bus temperature sensors Small, accurate, low-cost sensors for advanced temperature regulation Accurate performance in a proven format NXP temperature sensors use the familiar I2C-bus/SMBus format* to deliver highly accurate temperature monitoring with low power consumption in a wide variety of applications.

Contextual Info: MA2504W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2507W10000000 Dual P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2507W is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2506W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2506W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2502W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

KEP11

Abstract: HEP11 mv2215 EP11 LVEL11 MC100EP11 MC10EP11 100EP11
Contextual Info: MC10EP11, MC100EP11 3.3V / 5V ECL 1:2 Differential Fanout Buffer The MC10/100EP11 is a differential 1:2 fanout buffer. The device is pin and functionally equivalent to the LVEL11 device. With AC performance much faster than the LVEL11 device, the EP11 is ideal

MPPT Algorithm

Abstract: SPV1040 mppt BASED DC TO DC CONVERTER Solar mppt mppt code mppt MPPT PWM Solar mppt APPLICATION MPPT Perturb-and-observe method charger solar mppt
Contextual Info: High-efficiency solar battery charger STMicroelectronics High-performance solar battery charger with embedded maximum power point tracking The SPV1040 is a high-efficiency, low-power, low-voltage DC-DC step-up converter that maximizes the energy transferred from the

SI6410DQ

Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LV358 CMOS IC GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS  SOP-8 DESCRIPTION 1 The UTC LV358 is a dual op amp with low supply current and low voltage 2.7-5.5V . It brings nice performance to low voltage and low

TSSOP-8 footprint

Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
Contextual Info: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE

kvL11

Contextual Info: MC100LVEL11 3.3V ECL 1:2 Differential Fanout Buffer The MC100LVEL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times

Contextual Info: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1

Contextual Info: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT

Contextual Info: Si6973DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.8 0.039 at VGS = - 2.5 V - 4.2 0.055 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Contextual Info: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ S2 G2

Contextual Info: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS