TSUS4400 Search Results
TSUS4400 Price and Stock
Vishay Semiconductors TSUS4400EMITTER IR 950NM 100MA RADIAL |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
TSUS4400 | Bulk |
|
Buy Now | |||||||
Vishay Semiconductors TSUS4400-CSZEMITTER IR 950NM STD 3MM |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
TSUS4400-CSZ | Reel |
|
Buy Now | |||||||
tfk TSUS4400Infrared Emitting Diode, 950 nm, GaAs Infrared LED, 3mm, 1-Element, 950nm |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
TSUS4400 | 37,900 |
|
Get Quote |
TSUS4400 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
TSUS4400 | Vishay Telefunken | GaAs Infrared Emitting Diode in Deg 3 mm (T-1) Package | Original | 82.31KB | 5 | |||
TSUS4400-CSZ | Vishay Semiconductors | EMITTER IR 950NM STD 3MM | Original | 110.25KB |
TSUS4400 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
Original |
TSUS4400 TSUS4400 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: TSUS4400 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : 3 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 18° |
Original |
TSUS4400 2002/95/EC 2002/96/EC TSUS4400 11-Mar-11 | |
TSUS4400
Abstract: 6544
|
Original |
TSUS4400 2002/95/EC 2002/96/EC TSUS4400 18-Jul-08 6544 | |
Contextual Info: TSUS4400 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 18° |
Original |
TSUS4400 TSUS4400 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
TSUS4400Contextual Info: TSUS4400 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in ∅ 3 mm T-1 Package Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
Original |
TSUS4400 TSUS4400 D-74025 06-May-04 | |
TSUS4400Contextual Info: TSUS4400 Vishay Semiconductors GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally |
Original |
TSUS4400 TSUS4400 D-74025 20-May-99 | |
TSUS4400Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
Original |
TSUS4400 TSUS4400 2002/95/EC 2002/96/EC 08-Apr-05 | |
CQX48B
Abstract: IR Emitters "IR Emitters"
|
OCR Scan |
CQY36N CQY37N TSUS4400 CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 TSUS5400 TSUS5401 IR Emitters "IR Emitters" | |
Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 18° |
Original |
TSUS4400 2002/95/EC 2002/96/EC TSUS4400 11-Mar-11 | |
Contextual Info: TSUS4400 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in ∅ 3 mm T-1 Package Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
Original |
TSUS4400 TSUS4400 D-74025 08-Apr-04 | |
NS1005
Abstract: SR 102
|
Original |
TSUS4400 TSUS4400 D-74025 20-May-99 NS1005 SR 102 | |
Contextual Info: Temic TSUS4400 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in 0 3 mm T -l Package Description T SU S 4400 is an infrared em itting diode in standard GaAs on G aA s technology, m olded in a clear, blue tinted plastic package. The device is spectrally m atched to silicon pho |
OCR Scan |
TSUS4400 l5-Jul-96 15-Jul-96 | |
TSUS4400
Abstract: RthJA
|
Original |
TSUS4400 TSUS4400 D-74025 20-May-99 RthJA | |
DIN 7990
Abstract: sr102
|
Original |
TSUS4400 2002/95/EC 2002/96/EC TSUS4400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 DIN 7990 sr102 | |
|
|||
Contextual Info: Tem ic TSUS4400 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in 0 3 mm T -l Package Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
OCR Scan |
TSUS4400 TSUS4400 D-74025 18-May-98 | |
TSUS4400Contextual Info: TSUS4400 GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
Original |
TSUS4400 TSUS4400 D-74025 15-Jul-96 | |
Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
Original |
TSUS4400 TSUS4400 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
Contextual Info: TSUS4400 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : 3 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 18° |
Original |
TSUS4400 2002/95/EC 2002/96/EC TSUS4400 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
CQX48B
Abstract: TLH04400 TLRG542
|
OCR Scan |
TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 CQX48B TLH04400 TLRG542 | |
tfm 5380
Abstract: TFM 5360 TFM 5300 ir TFM 5330 tfm 5560 TFM 5300 TFM 1380 T Temic TFM 5360 u2506b TFM 5400
|
Original |
D-74025 15-Jul-96 tfm 5380 TFM 5360 TFM 5300 ir TFM 5330 tfm 5560 TFM 5300 TFM 1380 T Temic TFM 5360 u2506b TFM 5400 | |
c1g smd
Abstract: bpv10nf TEMD2100
|
OCR Scan |
CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
|
Original |
emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
|
Original |
vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
|
Original |
11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet |